Abstract: A signal transmission gate is disclosed for gating signals including those at af and rf frequencies in response to a gating signal. For the duration of the gating signal, the transmission gate has a low signal pass resistance. In the absence of a gating signal, the transmission gate has a high signal pass resistance. The transmission gate is bidirectional in that it can pass or block signals in two directions. The transmission gate is especially well-adapted for use in applications requiring a high signal shunt resistance when the transmission gate is on which is achieved by gating with a high impedance source. An embodiment of one such high impedance source is also disclosed.