Abstract: Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.

Abstract: Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.

Abstract: Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.

Abstract: A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.

Abstract: A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.

Abstract: A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.

Abstract: A multifilamentary stabilized superconductor of the A-15 type is disclosed wherein the A-15 compound is formed on rods of niobium or vanadium by diffusion of tin or gallium, respectively, from a copper alloy matrix and wherein stabilization is provided by an external layer of copper. The stabilizing copper is protected from tin or gallium diffusion by a number of spirally wrapped layers of tantalum separated from one another by copper layers.

Abstract: A multifilamentary superconductor having a large number of NbTi filaments in an aluminum alloy matrix which is stabilized by a high-purity aluminum sheath is disclosed, together with the method of its manufacture. An Al alloy billet having a number of NbTi rods disposed therein is extruded. A superpure Al sheath is added; this product is then enclosed in copper and wiredrawn after which the copper is etched off.

Abstract: A method of making A-15 type intermetallic superconductors is disclosed which features elimination of numerous annealing steps. Nb or V filaments are embedded in Cu matrices; annular layers of Sn or Ga, respectively, separated from each other by Cu layers, provide the other component of the intermetallic superconductors Nb.sub.3 Sn and V.sub.3 Ga.

Abstract: A multifilamentary stabilized superconductor of the A-15 type is disclosed wherein the A-15 compound is formed on rods of niobium or vanadium by diffusion of tin or gallium, respectively, from a copper alloy matrix and wherein stabilization is provided by an external layer of copper. The stabilizing copper is protected from tin or gallium diffusion by a number of spirally wrapped layers of tantalum separated from one another by copper layers.

Abstract: A multifilamentary superconductor having a large number fo NbTi filaments in an aluminum alloy matrix which is stabilized by a high-purity aluminum sheath is disclosed, together with the method of its manufacture. An Al alloy billet having a number of NbTi rods disposed therein is extruded. A superpure Al sheath is added; this product is then enclosed in copper and wiredrawn after which the copper is etched off.