Abstract: In an embodiment a method includes providing a substrate with a plurality of optoelectronic components and at least one test component arranged on a support element on the substrate, wherein the at least one test component is adjacent to at least one of the plurality of the optoelectronic components, wherein the support element comprises a plurality of first support pillars each connected to the substrate and an interface layer arranged between the optoelectronic components and the at least one test component, respectively, and the first support pillars, the interface layer forming a top surface of the first support pillars, and wherein the at least one test component is arranged on the top surface of an associated first support pillar such that the at least one test component protrudes a projection of the top surface at least in a first direction, applying a force to the at least one test component, and determining the force applied to the at least test component and/or a deflection of the at least one test

Abstract: In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact w

Abstract: A detector element is for detecting incident x-ray radiation. The detector element includes a scintillation layer for converting the x-ray radiation into scintillation light and a photoactive element for converting the scintillation light into an electric signal. The photoactive element includes a first photoactive absorption layer contacted by an electrode, and a second photoactive absorption layer contacted by a counter electrode. Here, the scintillation layer is arranged between the first photoactive absorption layer and the second photoactive absorption layer.

Abstract: A detector element is for detecting incident x-ray radiation. The detector element includes a scintillation layer for converting the x-ray radiation into scintillation light and a photoactive element for converting the scintillation light into an electric signal. The photoactive element includes a first photoactive absorption layer contacted by an electrode, and a second photoactive absorption layer contacted by a counter electrode. Here, the scintillation layer is arranged between the first photoactive absorption layer and the second photoactive absorption layer.