Abstract: A voltage-matched solar module for converting incident solar radiation into electricity consisting of a plurality of wafer-sized multi-junction solar devices and wiring circuitry adjacent to a module-sized bottom substrate. Each solar device has at least two photovoltaic (PV) cells separated by electrically insulating transparent layers. The PV cells are aligned so as to overlap and are electrically connected to the wiring circuitry by conducting vias. The wiring circuitry includes a multiplicity of serial strings electrically connected in parallel and having substantially the same voltage. A method of producing the solar module is disclosed which utilizes an ALD/LPCVD tool for van der Waals epitaxy of 2D materials.

Abstract: A voltage-matched solar module for converting incident solar radiation into electricity consisting of a plurality of wafer-sized multi-junction solar devices and wiring circuitry adjacent to a module-sized bottom substrate. Each solar device has at least two photovoltaic (PV) cells separated by electrically insulating transparent layers. The PV cells are aligned so as to overlap and are electrically connected to the wiring circuitry by conducting vias. The wiring circuitry includes a multiplicity of serial strings electrically connected in parallel and having substantially the same voltage. A method of producing the solar module is disclosed which utilizes an ALD/LPCVD tool for van der Waals epitaxy of 2D materials.

Abstract: A vertical FET, including a source layer, a channel layer, a drain layer and a gate dielectric, the source layer being coupled with a source electrode, the channel layer being deposited on top of the source layer, the drain layer being deposited on top of the channel layer and being coupled with a drain electrode, the gate dielectric being conformally deposited within a cylindrical niche through the drain layer down to the channel layer, the gate dielectric being encircled by the drain layer, the gate dielectric being coupled with a gate electrode deposited within the cylindrical niche, when a threshold voltage Is applied to the gate electrode a channel is formed between the source layer and the drain layer, a length of the channel corresponding to a thickness of the channel layer and a width of the channel corresponding to a perimeter of the cylindrical niche.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: A method for growing islands of semiconductor monocrystals from a solution on an amorphous substrate includes the procedures of depositing a semiconductor-metal mixture layer, applying lithography and etching for forming at least one platform, heating the at least one platform, and saturating the semiconductor-metal solution until a monocrystal of the semiconductor component is formed. The procedure of depositing a semiconductor-metal mixture layer, includes a semiconductor component and at least one other metal component, is performed on top of the amorphous substrate. The procedure of applying lithography and etching to the semiconductor-metal mixture layer and a portion of the amorphous substrate is performed for forming at least one platform, the at least one platform having a top view shape corresponding to crystal growth direction and habit respective of the semiconductor component.

Abstract: A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

Abstract: Solar system for converting solar radiation into electric energy, the system comprising: a refraction array and a converting array, the refracting array including at least one refraction sub array, each of the refraction sub arrays including a plurality of refraction sites, each of the refraction sites refracting variable approach angle collimated solar radiation into a plurality of solar rays, each of the solar rays being of a different waveband, each of the refraction sites directing each of the solar rays, refracted thereby, in a different direction, the different direction being at least dependent on the approach angle of the solar radiation, the converting array including a plurality of broadband converting cells, positioned such that light refracted by the refraction array impinges on the converting array, wherein at any given moment, each of the converting cells receives solar rays of a specific waveband originating from different refraction sites and arriving from different directions thereto.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: A plasma generating apparatus is provided with a high vacuum processing chamber and a transformer type plasmatron that is coupled with the high vacuum processing chamber. At least one gas source is coupled with the transformer type plasmatron, for introducing at least one gas into the transformer type plasmatron. The high vacuum processing chamber includes at least one entry port. The transformer type plasmatron includes: a radio frequency power source, for generating alternating current power; a plurality of conductors, coupled with the radio frequency power source; a closed loop discharge chamber, for confining the at least one gas; a plurality of high permeability magnetic cores, coupled around an outer portion of the closed loop discharge chamber and with the plurality of conductors; a plurality of apertures, located along an inner portion of the closed loop discharge chamber; and at least two dielectric gaskets.

Abstract: Solar system for converting solar radiation into electric energy, the system comprising: a refraction array and a converting array, the refracting array including at least one refraction sub array, each of the refraction sub arrays including a plurality of refraction sites, each of the refraction sites refracting variable approach angle collimated solar radiation into a plurality of solar rays, each of the solar rays being of a different waveband, each of the refraction sites directing each of the solar rays, refracted thereby, in a different direction, the different direction being at least dependent on the approach angle of the solar radiation, the converting array including a plurality of broadband converting cells, positioned such that light refracted by the refraction array impinges on the converting array, wherein at any given moment, each of the converting cells receives solar rays of a specific waveband originating from different refraction sites and arriving from different directions thereto.

Abstract: A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

Abstract: A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The method further includes introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops.

Abstract: A method for growing islands of semiconductor monocrystals from a solution on an amorphous substrate includes the procedures of depositing a semiconductor-metal mixture layer, applying lithography and etching for forming at least one platform, heating the at least one platform, and saturating the semiconductor-metal solution until a monocrystal of the semiconductor component is formed. The procedure of depositing a semiconductor-metal mixture layer, includes a semiconductor component and at least one other metal component, is performed on top of the amorphous substrate. The procedure of applying lithography and etching to the semiconductor-metal mixture layer and a portion of the amorphous substrate is performed for forming at least one platform, the at least one platform having a top view shape corresponding to crystal growth direction and habit respective of the semiconductor component.

Abstract: A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The method further includes introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops.

Abstract: A method forms a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860° C. and approximately 870° C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863° C., and the working pressure is within the range of 0.05 Pa and 2.5 Pa. Application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed.

Abstract: A method for forming a uniformly oriented crystalline sheet, wherein a plurality of crystallites are introduced into a liquid. At least a portion of the crystallites float on the surface of the liquid, and are induced to self-orientate until they are uniformly oriented in a compact mosaic configuration, while their sintering is prevented. A uniformly oriented crystalline sheet is formed from the compact mosaic configuration, for example, by sintering the crystallites. An apparatus for forming a crystalline sheet includes a container containing a liquid, wherein a plurality of crystallites are introduced and at least a portion thereof float on the surface of the liquid without sintering.

Abstract: A thin film semiconductor-on-insulator FET and a method of its fabrication are presented. The FET comprises a substantially vertically extending semiconductor channel formed between two, parallel, horizontally extending source and drain electrodes. A lower one of the source and drain electrodes is formed in a groove made in the surface of an insulator substrate. The semiconductor channel is defined by a super structure of semiconductor layers located within a periphery region of a conical-shaped structure which is surrounded by an insulator layer located above the lower electrode, the tip of the conical-shaped structure being in contact with this electrode. A gate electrode on gate oxide is located within a central region of the conical-shaped structure. The other upper one of the source and drain electrodes is associated with the base of the conical-shaped structure extending in a plane parallel to the lower electrode.

Abstract: A thin film semiconductor-on-insulator FET and a method of its fabrication are presented. The FET comprises a substantially vertically extending semiconductor channel formed between two, parallel, horizontally extending source and drain electrodes. A lower one of the source and drain electrodes is formed in a groove made in the surface of an insulator substrate. The semiconductor channel is defined by a super structure of semiconductor layers located within a periphery region of a conical-shaped structure which is surrounded by an insulator layer located above the lower electrode, the tip of the conical-shaped structure being in contact with this electrode. A gate electrode on gate oxide is located within a central region of the conical-shaped structure. The other upper one of the source and drain electrodes is associated with the base of the conical-shaped structure extending in a plane parallel to the lower electrode.