Abstract: A method for forming high frequency connections between a fragile chip and a substrate is described, wherein metal is selectively deposited on a surface of a chip and a surface of a substrate, and corresponding patterns of electrically conductive bumps are selectively evaporated on the surface of the chip and the surface of the substrate over the metal layers, to form a pattern of electrically conductive bumps having spongy and dendritic properties, placing the chip in aligned contact with the substrate where each electrically conductive chip bump mates with each corresponding electrically conductive substrate bump, and selectively applying heat and pressure to the chip and substrate causing each chip bump to fuse together with each corresponding substrate bump to form an electromechanical bond.

Abstract: An X-ray collimator grid is formed within a wafer of monocrystalline silicon material by forming a plurality of spaced parallel elongate slots within a planar surface of a silicon crystal wafer, and forming slats of heavy metal in situs within each of said slots, including squeegeeing the heavy metal into the slots, from particles of heavy metal, each said slat gripping the walls of an associated slot.

Abstract: A two-dimensional integrated laser array having a plurality of surface-emitting laser arrays and a plurality of waveguides for optically coupling the individual laser arrays together. Each surface-emitting laser array includes a plurality of injection lasers which are evanescently coupled together in order to emit a single beam of light. The coupling provided by the waveguides causes the surface-emitting laser arrays to operate in phase and at the same wavelength as an external master oscillator. Therefore, the surface-emitting laser arrays generate coherent beams of light, which are combined and focused by a micro-lens. The output of the micro-lens is a single, coherent high-power optical beam which is emitted perpendicular to the two-dimensional integrated laser array.

Abstract: A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.

Abstract: An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer.