Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.

Abstract: A duplexer with a reduced filter loss is provided. The duplexer includes two or more filters F1 and F2 that are connected to a common terminal and that have different passbands. At least one of the filters F1 and F2 includes a plurality of series resonators S1 to Sn connected in series to a path between an input terminal and an output terminal of the filter, and parallel resonators P1 to Pm connected in parallel to the above-mentioned path. An inductance L1 is connected in parallel to at least one of the series resonators, and the series resonator S1 having the inductance L1 connected in parallel thereto is divided into a plurality of resonators S11 to S13 connected in series.

Abstract: In one aspect of the invention, a duplexer including a multilayer substrate with multiple stacked layers and a back surface with a rectangular shape is disclosed. An antenna terminal, a transmission terminal, a reception terminal, a ground terminal, and a conductor are provided in various positions on the multilayer substrate for improved performance.

Abstract: A resonator includes a substrate, a lower electrode, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. The lower electrode includes a first film provided on the substrate, and a second film that is provided on the first film and has a specific gravity greater than that of the first film. The piezoelectric film is provided on the second film. The upper electrode includes a third film provided on the piezoelectric film, and a fourth film provided on the third film, the third film having a specific gravity greater than that of the fourth film. The third film is thicker than the second film.

Abstract: A filter includes: a converter circuit, provided with a single-type common terminal and two balanced terminals, for performing conversion between a balanced line and an unbalanced line; two filter units coupled to each of the balanced terminals of the converter circuit and allowing passage of a signal in a pass band; and a bridging capacitor arranged to extend across the converter circuit and one of the filter units in a bridging manner, wherein the inductance of an opposite-side line of one of the filter units relative to the converter circuit is electromagnetically coupled to the inductance of a line coupling the other filter unit and the converter circuit.

Abstract: An acoustic wave filter having excellent steepness is provided without adding any exterior components or any new manufacturing steps. A plurality of filters (10-1) each having a first resonator (2a-1) placed in a serial arm and having a resonance frequency frs and an anti-resonance frequency fas, and a second resonator (4a-1) placed in a parallel arm and having a resonance frequency frp and an anti-resonance frequency fap are provided on a same substrate, where the resonance frequency frs of the first resonator is higher than the resonance frequency frp of the second resonator; the anti-resonance frequency fas of the first resonator is higher than the anti-resonance frequency fap of the second resonator; and the filters (10-1) are connected in multiple stages. At least one of the filters (10-1) connected in multiple stages has a third resonator (6-1) having a resonance frequency frp and an anti-resonance frequency fap.

Abstract: A filter includes: a first filter unit includes: a series resonators connected in series to each other between a first input terminal and a first output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to a ground terminal, and a second filter unit includes: a series resonators connected in series to each other between a second input terminal and a second output terminal; a parallel resonators each having one end connected to one terminal of each of the series resonators; and a common inductance having one end connected to the other ends of the parallel resonators and the other end connected to the ground terminal.

Abstract: A piezoelectric thin film resonant element includes a resonant portion having a laminate structure made up of a lower electrode, an upper electrode and a piezoelectric film arranged between these two electrodes. The lower electrode has an ellipsoidal plan-view shape and an outer circumference formed with an inclined portion inclined at an angle (about 30° for example) lying within a range of 25° through 55°. The upper electrode has an ellipsoidal plan-view shape. An additional film is provided on the upper electrode at a portion corresponding to the inclined portion of the lower electrode.

Abstract: A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the substrate and the lower electrode, and an upper electrode formed on the piezoelectric film and opposing the lower electrode, an upper electrode formed on the piezoelectric film. The upper electrode has a main portion and an extended portion connected to the main portion, the main portion opposing the lower electrode and an opening disposed between the substrate and the lower electrode, the extended portion having a portion which opposes the opening and the substrate.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode formed on the piezoelectric film, the lower electrode and the upper electrode opposing each other through the piezoelectric film to form an opposing region, the opposing region including a space at a boundary of the opposing region. The space extends from an innerside to an outer side of the opposing region and is formed in or on the piezoelectric film.

Abstract: A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.

Abstract: A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.

Abstract: An acoustic wave device includes a ladder-type filter in which resonators are connected in a ladder configuration. In the acoustic wave device, series-connected resonators are connected in a parallel line in the ladder-type filter, and the resonators connected in the parallel line have mutually different resonance frequencies.

Abstract: A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.

Abstract: A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.

Abstract: A piezoelectric thin film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least a portion of the upper electrode and that of the lower electrode oppose each other through the piezoelectric film, and at least a portion of the periphery of the upper electrode is reversely tapered.

Abstract: Survey request data on a chemical substance is transmitted to a terminal 3. Entered survey request data on the chemical substance, the entry area for the survey details information on the chemical substance used in a production of a part indicated by the part identification information having been entered in the entered survey request data, is received from the terminal 3. The format of each information in the survey details information entered in the entered survey request data on the chemical substance is checked by using check definition data. The checked entered survey request data is transmitted to a predetermined apparatus.

Abstract: In a high frequency device, resonators (IDT capacitors) that function as capacitors are included in a lumped constant balun included in a filter or duplexer, and furthermore, the resonance frequency of the IDT capacitors is set higher than the passband frequency of the filter. This improves the capacitor Q value, thus enabling the realization of a low-loss balance filter.

Abstract: According to an aspect of the invention, each of a filter, a duplexer and a communication module includes a plurality of series resonators connected to a signal line in series and a plurality of parallel resonators connected to the signal line in parallel. At least two of the plurality of parallel resonators are connected to the signal line between two of the plurality of series resonators in parallel, inductors are respectively connected to the at least two parallel resonators, and the inductors have different inductances from each other.