Abstract: A piezoelectric device includes a piezoelectric element, a package, and a vibration absorber. The package contains at least the piezoelectric element. The vibration absorber is disposed on a mounting component, and supports the package. The mounting component is a component to which the package is mounted. The vibration absorber absorbs vibration transmitted from the mounting component to the package. The piezoelectric element has a substantially rectangular shape in plan view. The piezoelectric element is a crystal resonator element including a crystal strip, and electrodes. The crystal strip includes a first major face and a second major face opposite to the first major face. The electrodes extend from the first major face of the crystal strip to the second major face.

Abstract: A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.