Patents by Inventor Motoharu Imai

Motoharu Imai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Liquid level sensor device for liquefied gas
    Patent number: 8266958
    Abstract: An object is to provide a liquid level sensor device for liquefied gas enabling measurement on a liquid level of liquefied gas having a boiling point in the vicinity of 21 K, e.g. liquid hydrogen, accurately and with good reproducibility and enabling simple production with good reproducibility. The present invention is a liquid level sensor device for liquefied gas including compound containing magnesium and boron arranged in succession in the longitudinal direction over the entire or a part of surface of a linear conductor made of metal and a portion of the compound thereof dipped in liquid is in a superconductive state at liquid level measurement.
    Type: Grant
    Filed: May 14, 2007
    Date of Patent: September 18, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhide Tanaka, Masaya Takahashi, Michiya Okada, Hideki Abe, Motoharu Imai
  • Liquid Level Sensor Device for Liquefied Gas
    Publication number: 20070266795
    Abstract: An object is to provide a liquid level sensor device for liquefied gas enabling measurement on a liquid level of liquefied gas having a boiling point in the vicinity of 21 K, e.g. liquid hydrogen, accurately and with good reproducibility and enabling simple production with good reproducibility. The present invention is a liquid level sensor device for liquefied gas including compound containing magnesium and boron arranged in succession in the longitudinal direction over the entire or a part of surface of a linear conductor made of metal and a portion of the compound thereof dipped in liquid is in a superconductive state at liquid level measurement.
    Type: Application
    Filed: May 14, 2007
    Publication date: November 22, 2007
    Inventors: Kazuhide Tanaka, Masaya Takahashi, Michiya Okada, Hideki Abe, Motoharu Imai
  • Gate and CMOS structure and MOS structure
    Patent number: 7091569
    Abstract: Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 102 S·m?1, nor more than 105 S·m?1 without impurities and has a band structure like that of a semiconductor.
    Type: Grant
    Filed: March 1, 2002
    Date of Patent: August 15, 2006
    Assignee: National Institute for Materials Science
    Inventors: Toyohiro Chikyo, Motoharu Imai
  • Gate and cmos structure and mos structure
    Publication number: 20040104441
    Abstract: Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 102 S·m−1, nor more than 105 S·m−1 without impurities and has a band structure like that of a semiconductor.
    Type: Application
    Filed: January 13, 2004
    Publication date: June 3, 2004
    Inventors: Toyohiro Chikyo, Motoharu Imai