Patents by Inventor Motohiro Kitajima

Motohiro Kitajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density DRAM
    Patent number: 4977436
    Abstract: A high density DRAM having a plurality of cells each including a storage capacitor and a single control FET formed together in a trench to substantially reduce planar area of the cell. The FET drain is formed in the upper portion of a pedestal and is accessible externally through a metal line, which reduces line resistance and capacitance. Field oxide is included to isolate capacitors and reduce leakage and breakdown.
    Type: Grant
    Filed: July 25, 1988
    Date of Patent: December 11, 1990
    Assignee: Motorola, Inc.
    Inventors: Kazuhisa Tsuchiya, Yoshio Enosawa, Motohiro Kitajima
  • Method of manufacturing an insulated gate type field effect semiconductor device
    Patent number: 4039358
    Abstract: A method of manufacturing an insulated gate type field effect semiconductor device, wherein before an oxide film for the gate is formed, the surface portion of the silicon substrate is removed which includes defect such as scar, crack, distortion, dislocation or the like which tends to cause pin-holes to be formed in said oxide film.
    Type: Grant
    Filed: September 8, 1976
    Date of Patent: August 2, 1977
    Assignee: Toko Incorporated
    Inventors: Motohiro Kitajima, Yoshihiko Nakagawa