Patents by Inventor Motohiro Kono

Motohiro Kono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9766132
    Abstract: A measuring apparatus measure the amount of a metal catalyst supported on a sample that has a membrane of a metal catalyst layer containing the metal catalyst. The measuring apparatus includes a terahertz-wave emitting part that emits a terahertz wave in the range of 0.01 to 10 THz to the sample, a transmitted-terahertz-wave detection part that detects the electric field intensity of a transmitted terahertz wave that has passed through the sample, a storage that stores correlation information acquired in advance and indicating the correlation between the amount of the metal catalyst supported and the electric field intensity of the transmitted terahertz wave, and an amount-of-catalyst-supported acquisition module that acquires the amount of the metal catalyst supported on the sample, on the basis of the correlation information and the electric field intensity of the transmitted terahertz wave detected by the transmitted-terahertz-wave detection part.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 19, 2017
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Yasuhiro Takase, Hidetoshi Nakanishi, Motohiro Kono, Kazuo Kinose
  • Publication number: 20160245703
    Abstract: A measuring apparatus measure the amount of a metal catalyst supported on a sample that has a membrane of a metal catalyst layer containing the metal catalyst. The measuring apparatus includes a terahertz-wave emitting part that emits a terahertz wave in the range of 0.01 to 10 THz to the sample, a transmitted-terahertz-wave detection part that detects the electric field intensity of a transmitted terahertz wave that has passed through the sample, a storage that stores correlation information acquired in advance and indicating the correlation between the amount of the metal catalyst supported and the electric field intensity of the transmitted terahertz wave, and an amount-of-catalyst-supported acquisition module that acquires the amount of the metal catalyst supported on the sample, on the basis of the correlation information and the electric field intensity of the transmitted terahertz wave detected by the transmitted-terahertz-wave detection part.
    Type: Application
    Filed: February 8, 2016
    Publication date: August 25, 2016
    Inventors: Yasuhiro TAKASE, Hidetoshi NAKANISHI, Motohiro KONO, Kazuo KINOSE
  • Patent number: 7795886
    Abstract: In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: September 14, 2010
    Assignee: Dainippon Screen Mgf. Co., Ltd.
    Inventors: Motohiro Kono, Toshikazu Kitajima, Kazuhiko Fuse, Yoshiyuki Nakazawa
  • Patent number: 7598746
    Abstract: A surface voltmeter has a stage having a conductive surface, a vibrating electrode, a vibration part, and an elevation mechanism. While vibrating the vibrating electrode, displacement current from the conductive surface is acquired. A control part controls electrode voltage so that the displacement current becomes a value specified by a computer, and acquires a relationship between the displacement current and the electrode voltage while changing the displacement current. Acquisition of the relationship is performed a plurality of times while changing distance between the vibrating electrode and an object, the electrode voltage which is independent from the distance between the vibrating electrode and the object is obtained as reference voltage, and surface voltage on the object is obtained on the basis of the reference voltage.
    Type: Grant
    Filed: March 9, 2007
    Date of Patent: October 6, 2009
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Motohiro Kono, Kazuhiko Fuse, Yoshiyuki Nakazawa
  • Publication number: 20090019722
    Abstract: In a body of a film-thickness measuring apparatus (1), an organic contamination remover (3) for removing organic contamination adsorbed onto a substrate (9) is provided. The organic contamination remover (3) includes a chamber body (31), an interior of which is kept clean. In the chamber body (31), a hot plate (32) for heating the substrate, a cooling plate (33) for cooling the substrate, and a transfer arm (34) for moving the substrate (9) from the hot plate (32) to the cooling plate (33) in the chamber body 31, are provided. With this structure, it is possible to keep the substrate (9) in a clean atmosphere within the chamber body (31), to thereby suppress re-adsorption of organic contamination onto the substrate during a time period from a time when organic contamination adsorbed onto the substrate (9) is removed to a time when cooling is completed.
    Type: Application
    Filed: July 16, 2008
    Publication date: January 22, 2009
    Applicant: DAINIPPON SCREEN MFG. CO., LTD.
    Inventors: Yoshiyuki Nakazawa, Motohiro Kono, Toshikazu Kitajima, Daisuke Iso
  • Publication number: 20080238434
    Abstract: In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
    Type: Application
    Filed: March 25, 2008
    Publication date: October 2, 2008
    Inventors: Motohiro Kono, Toshikazu Kitajima, Kazuhiko Fuse, Yoshiyuki Nakazawa
  • Patent number: 7427520
    Abstract: A memory (43) of a control unit (4) stores correction data (81) indicating a relationship between a decrement in a measurement value of a film thickness by removal of organic contamination adsorbed onto a substrate and an amount of adsorbed organic contamination corresponding to a difference between a true film thickness and the measurement. The difference is caused by organic contamination adsorbed onto the substrate before removal of organic contamination. In a film-thickness measuring apparatus (1), a calculating/measuring part 41 obtains a first measurement value of a film thickness on a substrate (9) using an ellipsometer (23), and further obtains a second measurement value which is affected by remaining organic contamination after organic contamination adsorbed onto the substrate (9) is removed by an organic contamination remover (3).
    Type: Grant
    Filed: March 3, 2005
    Date of Patent: September 23, 2008
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Motohiro Kono, Yoshiyuki Nakazawa, Toshikazu Kitajima
  • Patent number: 7375537
    Abstract: A relative-dielectric-constant measuring apparatus according to the present invention includes an ellipsometer and a capacitance measuring part. The ellipsometer allows non-contact measurements of the film thickness and optical constants of an insulation film formed on the upper surface of a wafer. The capacitance measuring part, on the other hand, allows non-contact measurements of the gap between the insulation film and an electrode and accumulation capacitance. The relative-dielectric-constant measuring apparatus can calculate the relative dielectric constant of the insulation film based on the measured film thickness, gap, and accumulation capacitance. Thus, the relative dielectric constant of the insulation film can be determined without contact and with high precision.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: May 20, 2008
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Toshikazu Kitajima, Motohiro Kono
  • Publication number: 20070216418
    Abstract: A surface voltmeter comprises a stage having a conductive surface, a vibrating electrode, a vibration part, and an elevation mechanism. While vibrating the vibrating electrode, displacement current from the conductive surface is acquired. A control part controls electrode voltage so that the displacement current becomes a value specified by a computer, and acquires a relationship between the displacement current and the electrode voltage while changing the displacement current. Acquisition of the relationship is performed a plurality of times while changing distance between the vibrating electrode and an object, the electrode voltage which is independent from the distance between the vibrating electrode and the object is obtained as reference voltage, and surface voltage on the object is obtained on the basis of the reference voltage.
    Type: Application
    Filed: March 9, 2007
    Publication date: September 20, 2007
    Inventors: Motohiro Kono, Kazuhiko Fuse, Yoshiyuki Nakazawa
  • Publication number: 20050239224
    Abstract: A relative-dielectric-constant measuring apparatus according to the present invention includes an ellipsometer and a capacitance measuring part. The ellipsometer allows non-contact measurements of the film thickness and optical constants of an insulation film formed on the upper surface of a wafer. The capacitance measuring part, on the other hand, allows non-contact measurements of the gap between the insulation film and an electrode and accumulation capacitance. The relative-dielectric-constant measuring apparatus can calculate the relative dielectric constant of the insulation film based on the measured film thickness, gap, and accumulation capacitance. Thus, the relative dielectric constant of the insulation film can be determined without contact and with high precision.
    Type: Application
    Filed: March 24, 2005
    Publication date: October 27, 2005
    Inventors: Toshikazu Kitajima, Motohiro Kono
  • Publication number: 20050206911
    Abstract: A memory (43) of a control unit (4) stores correction data (81) indicating a relationship between a decrement in a measurement value of a film thickness by removal of organic contamination adsorbed onto a substrate and an amount of adsorbed organic contamination corresponding to a difference between a true film thickness and the measurement. The difference is caused by organic contamination adsorbed onto the substrate before removal of organic contamination. In a film-thickness measuring apparatus (1), a calculating/measuring part 41 obtains a first measurement value of a film thickness on a substrate (9) using an ellipsometer (23), and further obtains a second measurement value which is affected by remaining organic contamination after organic contamination adsorbed onto the substrate (9) is removed by an organic contamination remover (3).
    Type: Application
    Filed: March 3, 2005
    Publication date: September 22, 2005
    Inventors: Motohiro Kono, Yoshiyuki Nakazawa, Toshikazu Kitajima
  • Publication number: 20050198857
    Abstract: In a body of a film-thickness measuring apparatus (1), an organic contamination remover (3) for removing organic contamination adsorbed onto a substrate (9) is provided. The organic contamination remover (3) includes a chamber body (31), an interior of which is kept clean. In the chamber body (31), a hot plate (32) for heating the substrate, a cooling plate (33) for cooling the substrate, and a transfer arm (34) for moving the substrate (9) from the hot plate (32) to the cooling plate (33) in the chamber body 31, are provided. With this structure, it is possible to keep the substrate (9) in a clean atmosphere within the chamber body (31), to thereby suppress re-adsorption of organic contamination onto the substrate during a time period from a time when organic contamination adsorbed onto the substrate (9) is removed to a time when cooling is completed.
    Type: Application
    Filed: March 3, 2005
    Publication date: September 15, 2005
    Inventors: Yoshiyuki Nakazawa, Motohiro Kono, Toshikazu Kitajima, Daisuke Iso
  • Patent number: 6915232
    Abstract: A non-contact method of measuring the thickness of an insulator film on a semiconductor substrate includes: (i) charging the insulator film surface in a non-contact manner; (ii) obtaining a first flat band voltage by conducting, prior to the charging processing step, a C-V measurement on the semiconductor substrate; obtaining a second flat band voltage by conducting, after the charging processing step, a C-V measurement on the semiconductor substrate; and calculating, based on a difference between the first and second flat band voltages, the charge amount given to the insulator film surface by the charging processing step; (iii) then measuring the insulator film surface potential and (iv) calculating the insulator film thickness based on the charge amount measured at the charge amount measuring step and on the surface potential measured at the surface potential measuring step.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: July 5, 2005
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Toshikazu Kitajima, Motohiro Kono
  • Publication number: 20040019442
    Abstract: A method of measuring the thickness of an insulator film formed on one surface of a semiconductor substrate, in a non-contact manner with respect to the insulator film.
    Type: Application
    Filed: July 21, 2003
    Publication date: January 29, 2004
    Applicant: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Toshikazu Kitajima, Motohiro Kono
  • Patent number: 6278267
    Abstract: The method obtains a first C-V curve prior to irradiation with light and a second C-V curve after the irradiation with light. The method determines the amount of the intra-film impurity ions in an insulating film in the state prior to the irradiation with light, based on the first and the second C-V curves.
    Type: Grant
    Filed: August 14, 1998
    Date of Patent: August 21, 2001
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Hiroshi Okada, Sadao Hirae, Motohiro Kono
  • Patent number: 6037781
    Abstract: C-V measurement is first carried out with respect to a target area on a semiconductor wafer using a measuring electrode located over the target area. Parameters used for C-t measurement of the target area (for example, applied voltages Vacc and Vmeas or a recovery time Tr) are then obtained from a C-V characteristic obtained by the C-V measurement. C-t measurement is subsequently carried out with respect to the target area using these parameters.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: March 14, 2000
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Motohiro Kono, Tatsufumi Kusuda
  • Patent number: 4746857
    Abstract: A probing apparatus is used to measure electrical characteristics of a semiconductor device formed on a wafer. The apparatus includes means for holding the wafer in a vertical or slightly leaned position on a frame, a contact needle, three-directional drive means for holding the needle on the frame movably both vertically and horizontally along the device-bearing surface of the wafer and for bringing the needle into releasable contact with a desired portion of the device-bearing surface of the wafer, and a microscope provided in such a way that the tip of the needle is seen substantially at the center of the field of view, said microscope being movable together with the needle along the device-bearing surface of the wafer.
    Type: Grant
    Filed: September 2, 1986
    Date of Patent: May 24, 1988
    Assignee: Danippon Screen Mfg. Co. Ltd.
    Inventors: Takamasa Sakai, Motohiro Kono, Takayuki Umaba, Yoshiyuki Nakagawa, Yoshihiro Koyama