Abstract: A replaceable component for a dispense head includes a first pipe disposed to pass through an inside of a dispense head, a pressing portion capable of pressing a valve body of a beverage supply valve in a beverage container, and a sealing member. The sealing member includes a first sealing portion capable of coming in contact with a beverage outlet of the beverage container, and a membrane connected to the first sealing portion and inhibiting a beverage from adhering to the dispense head.

Abstract: A solid-state imaging device according to an embodiment includes a first charge detector, a first output circuit and a pulse generator. The first charge detector includes a plurality of first pixels and is configured to detect charges accumulated in the plurality of first pixels. The first output circuit is configured to amplify the charges detected by the first charge detector and output the charges as an output signal. The pulse generator is configured to generate a sampling pulse to extract a charge signal from the output signal during a period different from a signal output period in which the output signal is outputted.

Abstract: A solid-state imaging device according to an embodiment includes a first charge detector, a first output circuit and a pulse generator. The first charge detector includes a plurality of first pixels and is configured to detect charges accumulated in the plurality of first pixels. The first output circuit is configured to amplify the charges detected by the first charge detector and output the charges as an output signal. The pulse generator is configured to generate a sampling pulse to extract a charge signal from the output signal during a period different from a signal output period in which the output signal is outputted.

Abstract: A solid-state image pickup device according to an embodiment includes a photoelectric conversion element, a first floating diffusion, and a second floating diffusion. The photoelectric conversion element photoelectrically converts incident light into signal charge. The first floating diffusion retains the signal charge that is transferred from the photoelectric conversion element. The second floating diffusion is electrically connectable to or separable from the first floating diffusion and is capable of retaining the signal charge.

Abstract: According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.

Abstract: According to one embodiment, a solid-state imaging device is provided which comprises a floating diffusion, a transfer gate, and a photoelectric conversion element. The floating diffusion is provided in a surface of a semiconductor layer. The transfer gate extends inward from the surface of the semiconductor layer and bends in the semiconductor layer toward the floating diffusion side. The photoelectric conversion element is provided in part of the semiconductor layer on the opposite side of the transfer gate from the floating diffusion and stretches from the side-surface side of the transfer gate to a position under the bottom thereof.

Abstract: According to one embodiment, a solid-state imaging device is provided which comprises a floating diffusion, a transfer gate, and a photoelectric conversion element. The floating diffusion is provided in a surface of a semiconductor layer. The transfer gate extends inward from the surface of the semiconductor layer and bends in the semiconductor layer toward the floating diffusion side. The photoelectric conversion element is provided in part of the semiconductor layer on the opposite side of the transfer gate from the floating diffusion and stretches from the side-surface side of the transfer gate to a position under the bottom thereof.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion lements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: According to an embodiment of the present invention, a solid state image pickup device is provided. The solid state image pickup device includes a plurality of photoelectric conversion elements, a light shielding unit, and a correction unit. The plurality of photoelectric conversion elements photoelectrically converts an incident light into charges corresponding to a received light amount. The light shielding unit is disposed in a light receiving surface side of a predetermined photoelectric conversion element of the plurality of photoelectric conversion elements and shields an incident light entering the predetermined photoelectric conversion element from a light receiving surface side. The correction unit corrects a received light amount of an incident light received by another photoelectric conversion element other than the predetermined photoelectric conversion element, based on a received light amount of an incident light received by the predetermined photoelectric conversion element.

Abstract: According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: According to one embodiment, a solid-state imaging device includes a unit cell forming region in a pixel array of a semiconductor substrate, a pixel which is provided in the unit cell forming region and generates a signal charge based on a light signal, and an amplification transistor which is provided in the unit cell forming region and amplifies a potential associated with the signal charge transferred from the pixel to a floating diffusion. The amplification transistor includes a gate electrode having one or more first embedded portions embedded in one or more trenches in the semiconductor substrate through a first gate insulating film.

Abstract: According to an embodiment of the present invention, a solid state image pickup device is provided. The solid state image pickup device includes a plurality of photoelectric conversion elements, a light shielding unit, and a correction unit. The plurality of photoelectric conversion elements photoelectrically converts an incident light into charges corresponding to a received light amount. The light shielding unit is disposed in a light receiving surface side of a predetermined photoelectric conversion element of the plurality of photoelectric conversion elements and shields an incident light entering the predetermined photoelectric conversion element from a light receiving surface side. The correction unit corrects a received light amount of an incident light received by another photoelectric conversion element other than the predetermined photoelectric conversion element, based on a received light amount of an incident light received by the predetermined photoelectric conversion element.

Abstract: According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively.

Abstract: According to one embodiment, a backside illumination solid-state imaging device includes a semiconductor layer, a first light-receiving unit and a second light-receiving unit, a circuit unit, an impurity isolation layer, and a light-shielding film. A first light-receiving unit and a second light-receiving unit are formed adjacent to each other in the semiconductor layer, convert light applied from a lower surface side of the semiconductor layer into a signal, and store electric charges. A circuit unit is formed on an upper surface of the semiconductor layer. An impurity isolation layer is formed to reach to the upper surface from the lower surface in the semiconductor layer and isolates the first light-receiving unit from the second light-receiving unit. A light-shielding film is formed on part of the lower surface side in the impurity isolation layer so as to extend from the lower surface to the upper surface.

Abstract: According to one embodiment, a backside illumination solid-state imaging device includes a semiconductor layer, a first light-receiving unit and a second light-receiving unit, a circuit unit, an impurity isolation layer, and a light-shielding film. A first light-receiving unit and a second light-receiving unit are formed adjacent to each other in the semiconductor layer, convert light applied from a lower surface side of the semiconductor layer into a signal, and store electric charges. A circuit unit is formed on an upper surface of the semiconductor layer. An impurity isolation layer is formed to reach to the upper surface from the lower surface in the semiconductor layer and isolates the first light-receiving unit from the second light-receiving unit. A light-shielding film is formed on part of the lower surface side in the impurity isolation layer so as to extend from the lower surface to the upper surface.

Abstract: According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively.

Abstract: A transfer gate is formed such that both end portions thereof in a second direction, which crosses a first direction in which a photodiode and a floating diffusion layer that is formed with a distance from the photodiode are arranged, are located inside boundaries with element isolation regions. Channel stopper layers are formed on surface portions of a device region in the vicinity of lower parts of both end portions of the transfer gate in the second direction in such a manner to extend to the boundaries with the element isolation regions.