Abstract: Disclosed are surface-coated SiC whiskers, processes for preparing the same, a ceramic reinforced with the same, and a process for preparing said reinforced ceramic. The surface-coated SiC whiskers are SiC whiskers (I) having a surface coated with a thin carbonaceous layer having a thickness of 7 to 100 .ANG., or SiC whiskers (II) having a surface coated with an Si.sub.3 N.sub.4 layer. The SiC whiskers (I) can be prepared by dispersing SiC whiskers in a homogeneous solution of a thermosetting resin in an organic solvent, separating the whiskers by filtration and drying it, curing the thermosetting resin, and firing the cured thermosetting resin in a non-oxidizing atmosphere at 800.degree. to 1,600.degree. C. The SiC whiskers (II) can be prepared by the dispersing SiC whiskers in a solvent of an organosilicon polymer in an organic solvent, separating the whiskers by filtration and drying it, heating the whiskers coated with the organosilicon polymer in a nitriding atmosphere at 1,200.degree. to 1,600.degree.

Abstract: Disclosed are surface-coated SiC whiskers, proceses for preparing the same, a ceramic reinforced with the same, and a process for preparing said reinforced ceramic. The surface-coated SiC whiskers are SiC whiskers (I) having a surface coated with a thin carbonaceous layer having a thickness of 7 to 100 .ANG., or SiC whiskers (II) having a surface coated with an Si.sub.3 N.sub.4 layer. The SiC whiskers (I) can be prepared by dispersing SiC whiskers in a homogeneous solution of a thermosetting resin in an organic solvent, separating the whiskers by filtration and drying it, curing the thermosetting resin, and firing the cured thermosetting resin in a non-oxidizing atmoshpere at 800.degree. to 1,600.degree. C. The SiC whiskers (II) can be prepared by dispersing SiC whiskers in a solution of an organosilicon polymer in an organic solvent, separating the whiskers by filtration and drying it, heating the whiskers coated with the organosilicon polymer in a nitriding atmoshpere at 1,200.degree. to 1,600.degree. C.

Abstract: The present invention provides a process for preparing silicon carbide whiskers. According to the process, carbon black having the following properties (a) to (c) is blended, as a carbonaceous material, with a silicon source material, and the resulting mixture is heated in a non-oxidizing atmosphere at 1,300.degree. to 1,800.degree. C.(a) Nitrogen adsorption specific surface area: 150 to 500 m.sup.2 /g(b) Dibutyl phthalate absorption: 120 to 200 ml/100 g.(c) Tint strength (%): equal to or below a value calculated according to the following formula:0.3496.times.(nitrogen adsorption specific surface area)-0.2143.times.(dibutyl phthalate absorption)+101.