Abstract: A control apparatus for a gas turbine having an air flow control valve for controlling the flow rate of combustion air in an air flow passage from a compressor to the gas turbine, includes an air velocity or flow sensor arranged in the vicinity of the air flow control valve. A control unit operates to control the opening of a fuel flow regulation valve and/or an air flow control valve on the basis of a signal from the air velocity or flow sensor, thereby to control the air fuel ratio in a combustion section of the gas turbine.

Abstract: A method for generating X-rays in an X-ray tube, comprises the steps of: rotating an X-ray target of a rotating anode, the X-ray target having a metal coated layer thereon; applying electron beams emitted from a cathode onto the metal coated layer of the X-ray target; and offsetting thermal deformation of the X-ray target due to the application of the electron beams by deformation of the X-ray target due to centrifugal force, thereby maintaining a position of the X-ray target in a direction of the application of the electron beams, at a room temperature of the X-ray target, thus generating the X-rays.

Abstract: A novel composite circuit comprises a first bipolar transistor with a collector of a first conductivity type connected to a first potential, an emitter of the first conductivity type connected to an output, a second bipolar transistor with a collector of the first conductivity type connected to the output and an emitter of the first conductivity type connected to a second potential, a field effect transistor of a second conductivity type with a gate connected to an input, a source connected to a third potential and a drain connected to the base of the first bipolar transistor, a field effect transistor of the first conductivity type with a gate connected to the input, a drain connected to the base of the first bipolar transistor, and a source connected to the base of the second bipolar transistor, and a unidirectional element inserted between the output and the drain of the field effect transistor of the first conductivity type and having a direction of rectification opposite to that of the PN junction formed

Abstract: An image sensor comprises a transparent substrate, an optical lens formed integrally in one major surface of the transparent substrate, and a photosensor provided on the side of the other major surface of the transparent substrate and having output electrodes, wherein light incident on the optical lens is focussed by the lens onto the photosensor through the transparent substrate.

Abstract: A novel composite circuit comprises a first bipolar transistor with a collector of a first conductivity type connected to a first potential, an emitter of the first conductivity type connected to an output, a second bipolar transistor with a collector of the first conductivity type connected to the output and an emitter of the first conductivity type connected to a second potential, a field effect transistor of a second conductivity type with a gate connected to an input, a source connected to a third potential and a drain connected to the base of the first bipolar transistor, a field effect transistor of the first conductivity type with a gate connected to the input, a drain connected to the base of the first bipolar transistor, and a source connected to the base of the second bipolar transistor, and a unidirectional element inserted between the output and the drain of the field effect transistor of the first conductivity type and having a direction of rectification opposite to that of the PN junction formed

Abstract: A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.

Abstract: A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.

Abstract: Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.

Abstract: A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.

Abstract: A semiconductor pressure detector apparatus has a strain--electric signal conversion bridge which is composed of four semiconductor strain gauges, and an amplifier which serves to hold at a predetermined value the sum of currents flowing through the bridge. The midpoints of two arms constituting the bridge are respectively connected to the noninverting inputs of two negative feedback amplifiers. Outputs from the two negative feedback amplifiers are applied to a differential amplifier, and an output proportional to the difference of the outputs of the former amplifiers appears at an output terminal of the latter amplifier.

Abstract: A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures.A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.

Abstract: A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

Abstract: A semiconductor absolute pressure transducer assembly has a silicon diaphragm assembly and a covering member. The silicon diaphragm assembly has a circular pressure sensitive diaphragm, on the surface of which are diffused piezoresistors and conducting paths. The covering member composed of borosilicate glass has a circular well formed therein. On the surface of the silicon diaphragm assembly on which the piezoresistors and the conducting paths are diffused, a passivating layer of silicon dioxide is deposited. Further on the passivating layer, a conductive layer is formed by, for example, evaporating silicon. And the glass covering member is bonded on the silicon diaphragm assembly by anodic bonding. Namely, the silicon diaphragm assembly and the glass covering member are heated up to a certain high temperature and a relative high voltage applied across the conductive layer of the silicon diaphragm assembly and the glass covering members.

Abstract: A semiconductor substrate has a major surface, another major surface on the opposite side of the first major surface, a strain gauge stripe formed in the central portion of the second major surface by diffusing an impurity therein, and electrodes connected to the strain gauge stripes. These strain gauge stripes are spaced from the peripheral edge of the second major surface by a distance greater than 1/3 of the length of the same major surface. The first major surface of the semiconductor substrate is bonded to an elastic metal load plate.

Abstract: A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly.

Abstract: A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.

Abstract: A strain gauge pressure transducer apparatus having an impedance bridge of strain gauges formed on a thin wall semiconductor diaphragm to which a pressure to be detected is applied. Each of two arms of the impedance bridge includes two series-connected pressure transducer elements of the semiconductor strain gauges, and is electrically connected at one end thereof to each other. An operational amplifier of an excitation source supplies the impedance bridge with excitation current. That is, the output of the operational amplifier is connected to the junction of the two arms of the impedance bridge, and the inverting input thereof to the other end of one of the two arms. To the non-inverting input of the operational amplifier, a voltage signal varying in accordance with the changing of an ambient temperature is applied. Intermediate nodes of the two arms of the impedance bridge are connected to the inverting and non-inverting inputs of another operational amplifier, respectively.

Abstract: A nozzle head of an ink-jet printing apparatus according to the present invention comprises an ink reservoir for storing the ink supplied from an ink tank, a pump chamber provided between said ink reservoir and a nozzle for injecting ink particles, and a fluid diode provided between said ink reservoir and said pump chamber, which are all formed in a same substrate, wherein said pump chamber is caused to change its volume responsive to electric signals so that the ink stored therein is injected from said nozzle, and the ink is prevented from reversely flowing from said pump chamber to said ink reservoir when the volume of the pump chamber is changed, thereby to improve the frequency response of ink particles injected from the nozzle.

Abstract: A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

Abstract: A bridge circuit with four arms including semiconductor strain gauge elements has input terminals for coupling a DC power supply with a pair of diagonally opposite junctions of the bridge circuit per se and output terminals coupled with a pair of remaining diagonally opposite junctions. Initial zero-point temperature compensators each are connected in series and in parallel to each of semiconductor strain gauge elements on adjacent two arms of the bridge circuit. Temperature compensators for zero-point shift adjustment are each provided between the adjacent arms closer to each output terminal. A temperature compensator for span adjustment is provided between one of the input terminals and the DC power source. A constant current control unit for feeding a constant current to the bridge circuit is provided between the other input terminal and the DC power supply.