Abstract: A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

Abstract: A semiconductor pressure sensor comprises a silicon support substrate (1), an insulating layer (2) formed on the silicon support substrate (1), and a silicon thin plate (3) formed on the insulating layer (2). A through-hole (1a) extending in the thickness direction of the silicon support substrate (1) is formed in the silicon support substrate (1). The silicon thin plate (3) located on an extension of the through-hole (1a) functions as a diaphragm (23) that is deformed by an external pressure. The insulating layer (2) remains over the entire lower surface of the diaphragm (23). The thickness of the insulating layer (2) decreases from the peripheral portion toward the central portion of the diaphragm (23). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

Abstract: A magnetoresistive sensor device including a substrate, and a sensing portion and a signal processing circuit formed above the substrate with a resin film being disposed between the sensing portion and the signal processing circuit. The sensing portion detects changes in a magnetic field induced by a moving body, is located at a position for effectively detecting changes in a magnetic field induced by the moving body, and is constituted by a magnetoresistive sensor element.

Abstract: A dummy pattern is constituted by frame-shaped first patterns formed on a flat substrate so as to surround a resistance heater and a fluid temperature resistance thermometer, and frame-shaped second patterns formed on inner perimeter sides of the first patterns, edge portions of first and second diaphragm portions being positioned between the first patterns and the second patterns.

Abstract: A supporting film is formed over an entire front surface of a base material, a heating resistor composed of a platinum film having a predetermined pattern is formed on the supporting film, and a protecting film is formed over an entire surface of the supporting film so as to cover the heating resistor. A heating structure having a diaphragm construction is constructed by forming a cavity under a region where the heating resistor is formed by removing a portion of the base material so as to extend to the supporting film from the rear surface side of the base material. The supporting film and the protecting film are each constituted by a silicon nitride film having an index of refraction of less than 2.25.

Abstract: A supporting film is formed over an entire front surface of a base material, a heating resistor composed of a platinum film having a predetermined pattern is formed on the supporting film, and a protecting film is formed over an entire surface of the supporting film so as to cover the heating resistor. A heating structure having a diaphragm construction is constructed by forming a cavity under a region where the heating resistor is formed by removing a portion of the base material so as to extend to the supporting film from the rear surface side of the base material. The supporting film and the protecting film are each constituted by a silicon nitride film having an index of refraction of less than 2.25.

Abstract: The present invention provides a sensor element having a sensor substrate and a sensing portion supported by the sensor substrate. A resin film is provided between the sensor substrate and the sensing portion. The resin film has a high heat resistance to the temperature of the fabrication process and the use of sensor element, has excellent coverage of a three-dimensional structure, has a flat surface, applies a low stress to the sensing portion, is formed at low temperature, and prevents the sensing portion from being adversely affected in its fabrication process.

Abstract: The invention provides a sensor element having a sensor substrate and a flat sensor portion supported by the sensor substrate in which the surface of the flat sensing portion is covered with a silicone resin film. The silicone resin film is excellent in step coverage of the flat sensing portion, having low stress applied to the sensing portion, can be formed at low temperature and can prevent the sensing portion from being effected with adverse influence even in the fabrication steps.

Abstract: A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.

Abstract: A flow-rate detecting device for a heat-sensitive type flow sensor having high reliability. The device includes a planar substrate having first and second through-holes formed therein in juxtaposition with each other, an insulative supporting film formed over one major surface of the substrate so as to cover the through-holes, a fluid temperature measuring resistor formed by a heat-sensitive resistor film deposited at a location of the first through-hole on the supporting film oppositely to the substrate, a heat generating resistor formed of a heat-sensitive resistance film deposited at a location of the second through-hole on the supporting film oppositely to the substrate, an insulative protection film deposited so as to cover the fluid temperature measuring resistor and the heat generating resistor, and a reinforcing film provided for the fluid temperature measuring resistor. The reinforcing film is not provided for the heat generating resistor.

Abstract: The present invention provides a magnetoresistive sensor device including a substrate, and a sensing portion and a signal processing circuit formed above the substrate with a resin film being disposed between the sensing portion and the signal processing circuit,

Abstract: A dummy pattern is constituted by frame-shaped first patterns formed on a flat substrate so as to surround a resistance heater and a fluid temperature resistance thermometer, and frame-shaped second patterns formed on inner perimeter sides of the first patterns, edge portions of first and second diaphragm portions being positioned between the first patterns and the second patterns.

Abstract: A flow rate detecting element measuring the flow rates of various fluids, particularly the intake air of an internal combustion engine. The flow rate detecting element has a thin film layer including a support film and a protective film on one surface of a flat substrate, a heating resistance section and a comparative resistance section thermosensitive resistor having patterns and located between the support film and the protective film. The flat substrate has a recess which penetrates the flat substrate in the thickness direction thereof and facing the heating resistance section and the comparative resistance section. A fluid flow passage communicates with the recess which faces the comparative resistance section for fluid flow into the recess. Flow rate or velocity of a fluid can be measured accurately using the heating resistance section according to the fluid temperature reported by the comparative resistance section.

Abstract: A vehicle-mounted magnetoresistive sensor element includes plural plies of a magnetic layer and plural plies of a nonmagnetic layer, the magnetic layer and the nonmagnetic layer are alternately laminated with each other, the magnetic layer mainly contains Ni, Fe and Co, and the nonmagnetic layer mainly contains Cu, in which the magnetic layer has a composition represented by the following formula: Ni(1−x−y)FeyCox, where x and y satisfy the following conditions: x≧0.7, y≦0.3 and (1−x−y)≦0.15, the nonmagnetic layer has a composition represented by the following formula: CuzAl(1−z), where A is an additional element other than Cu, and z≧0.9; the thickness tm (angstrom) of the magnetic layer and the thickness tn (angstrom) of the nonmagnetic layer satisfy the following conditions: 10<tm<25; and 18<tn<25; and, when a guaranteed storage temperature of the magnetoresistive sensor element is T° C.

Abstract: A flow-rate detecting device for a heat-sensitive type flow sensor having high reliability. The device includes a planar substrate having first and second through-holes formed therein in juxtaposition with each other, an insulative supporting film formed over one major surface of the substrate so as to cover the through-holes, a fluid temperature measuring resistor formed by a heat-sensitive resistor film deposited at a location of the first through-hole on the supporting film oppositely to the substrate, a heat generating resistor formed of a heat-sensitive resistance film deposited at a location of the second through-hole on the supporting film oppositely to the substrate, an insulative protection film deposited so as to cover the fluid temperature measuring resistor and the heat generating resistor, and a reinforcing film provided for the fluid temperature measuring resistor. The reinforcing film is not provided for the heat generating resistor.

Abstract: To obtain a flow sensor having excellent responsibility, sensitivity and reliability and high flow detection accuracy by suppressing the deformation of a diaphragm, first additional patterns are formed on a side opposite to connection patterns of a heating element so that thin film patterns formed on the diaphragm become almost symmetrical, thereby suppressing the deformation of the diaphragm caused by internal stress between a base film or protective film and a platinum film forming the thin film patterns and the differences of mechanical or thermal properties therebetween.

Abstract: A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.

Abstract: A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.

Abstract: A process for preparing a highly pure silicone ladder polymer of the general formula (1): wherein R1 and R2 represent F, H, a lower alkyl group, an alkenyl group, an aryl group, a lower fluorinated alkyl group, a fluorinated alkenyl group or a fluorinated aryl group; R3, R4, R5 and R6 each represents H, a lower alkyl group or a lower fluorinated alkyl group; and n represents an integer of 5 to 10000, which comprises: (a) a step of obtaining a prepolymer in which at least one organosilane compound is dissolved in an organic solvent and hydrolyzed with ultrapure water; (b) a step of washing the obtained prepolymer with ultrapure water; and, (c) a step of dissolving the washed prepolymer in an organic solvent and heating without a catalyst.

Abstract: The present invention improves the sensitivity and expands the temperature range of operation of a magnetic detection device used in conjunction with rotary shafts such as those found in automobiles. A magnetic detection element consists of a giant magnetoresistance element and an integrated circuit for performing a predetermined operational processing based on the variation of magnetic field detected by the giant magnetoresistance element, and the magnetic detection element is operated in the magnetic field in the range of exceeding the magnetic field for maximizing the resistance value of the giant magnetoresistance element and below the field obtained by multiplying the saturation magnetic field of the giant magnetoresistance element by 0.8.