Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: A transmissive polarization control device includes: a semiconductor layer having a first surface and a second surface opposite to the first surface, the semiconductor layer including: a first conductivity type region having a conductivity type, a second conductivity type region having a conductivity type, and a pn junction located between the first and second conductivity type regions; a loop electrode disposed on the first surface and configured such that an electric current flowing through the loop produces a magnetic field in a direction penetrating the pn junction; and a near-field light formation region in which an impurity of the first conductivity type introduced as a dopant into the first conductivity type region for formation of near-field light is distributed. A polarization direction of linearly polarized light traveling through a region surrounded by the loop electrode and the near-field light formation region is rotated according to the electric current.

Abstract: There are provided a quantum dot, a plurality of quantum dots having a larger volume than the quantum dot, a light detection unit for detecting a light emission state of an output light from the plurality of quantum dots, and a light supply unit capable of supplying a control light to the plurality of quantum dots thereby to excite other exciters to a lower level, and controlling energy discharging of the exciters transiting to the lower level, wherein the control light to be supplied by the light supply unit is controlled per quantum dot based on the light emission state of the output light per quantum dot and previously-input search problem information.

Abstract: Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate.

Abstract: A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow of, at a portion where a local shape to enable generation of near field light is formed on a surface of the deposited material with the irradiation light, absorbing the irradiation light through a non-adiabatic process with the near field light, thereby generating electrons, and canceling generation of a local electric field based on the voltage, and a particle adsorbing flow of, at a portion where the shape is not formed, causing the portion where the local electric field is generated to sequentially adsorb particles forming the material, and shifting to the non-adiabatic flow when the shape is formed.

Abstract: A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1.

Abstract: Disclosed is a near-field photocatalyst using a ZnO (ZnO) nanowire. The photocatalyst is advantageous in that low-priced zinc is used instead of titanium, conventionally used as a photocatalyst to reduce expenses, and that it is possible to obtain overvoltage which is sufficient to generate hydrogen using an optical near field formed around an end of a ZnO nanowire without the application of additional external voltage, thus the use of a costly electrode, such as platinum, is avoided and a process is simplified.

Abstract: Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate.

Abstract: A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1.

Abstract: A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0.

Abstract: A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0.

Abstract: An optical detection device image is disclosed that allows fast measurements using near-field light at high resolution and high efficiency but without necessity of position alignment of an optical fiber probe. The optical detection device includes an optical fiber probe having a core for propagating light with an optical probe being formed at a front end of the core; a movement control unit to move the optical fiber probe to approach or depart from a sample; and a detection unit to detect light from the sample surface, wherein on the front end surface of the core of the optical probe, there are a first exit section on a peripheral side for emitting propagating light and a second exit section for seeping out the near-field light, the first exit section and the second exit section are formed in a concentric manner, and the tilt angle of the first exit section is different from the tilt angle of the second exit section.

Abstract: The broad range measurement exploiting the usual propagated light and the high resolution measurement mode exploiting near-field light are to be accomplished with a sole as-assembled optical probe. To this end, light radiated through an optical probe 13 having a light shielding coating layer 33 formed for defining a light radiating aperture D or light radiated at a core 31 of the optical probe 13 is propagated, as the optical probe 13 is moved in a direction towards and away from a surface for measurement 2a. The core of the optical probe is coated with a light shielding coating layer 33. In this manner, a spot of propagated light propagated through the core 31 or a spot of near-field light seeping from the light radiating aperture D is formed on the surface for measurement 2a, and light derived from the spot of light is detected.

Abstract: An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.

Abstract: An optical detection device image is disclosed that allows fast measurements using near-field light at high resolution and high efficiency but without necessity of position alignment of an optical fiber probe. The optical detection device includes an optical fiber probe having a core for propagating light with an optical probe being formed at a front end of the core; a movement control unit to move the optical fiber probe to approach or depart from a sample; and a detection unit to detect light from the sample surface, wherein on the front end surface of the core of the optical probe, there are a first exit section on a peripheral side for emitting propagating light and a second exit section for seeping out the near-field light, the first exit section and the second exit section are formed in a concentric manner, and the tilt angle of the first exit section is different from the tilt angle of the second exit section.

Abstract: The broad range measurement exploiting the usual propagated light and the high resolution measurement mode exploiting near-field light are to be accomplished with a sole as-assembled optical probe. To this end, light radiated through an optical probe 13 having a light shielding coating layer 33 formed for defining a light radiating aperture D or light radiated at a core 31 of the optical probe 13 is propagated, as the optical probe 13 is moved in a direction towards and away from a surface for measurement 2a. The core of the optical probe is coated with a light shielding coating layer 33. In this manner, a spot of propagated light propagated through the core 31 or a spot of near-field light seeping from the light radiating aperture D is formed on the surface for measurement 2a, and light derived from the spot of light is detected.

Abstract: An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.

Abstract: An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.

Abstract: In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

Abstract: An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.