Abstract: An electrode (1) includes a resin film (2), a metal underlayer (3), and a conductive carbon layer (4) in sequence in a thickness direction. A surface of the conductive carbon layer (4) has an arithmetic average roughness Ra of 1.50 nm or less and a skewness Rsk of 0.00 or more.

Abstract: A radio wave absorber (1a) includes a resistive layer (20), an electrical conductor (30), and a dielectric layer (10). The resistive layer (20) includes indium tin oxide as a main component. The electrical conductor (30) reflects a radio wave. The dielectric layer (10) is disposed between the resistive layer (20) and the electrical conductor (30) in the thickness direction of the resistive layer (20). The dielectric layer (10) is formed of a polymer. The content of tin oxide in the indium tin oxide included in the resistive layer (20) is more than 0 weight % and less than 20 weight %. The number of hydrogen atoms included in the resistive layer (20) is 5% or more of the total number of indium atoms, tin atoms, oxygen atoms, and hydrogen atoms included in the resistive layer (20).

Abstract: An electrode includes a substrate film, an inorganic oxide layer, a metal underlying layer, and an electrically conductive carbon layer in order toward one side in a thickness direction.

Abstract: An electrode includes a substrate, a conductive carbon layer disposed on one surface in a thickness direction of the substrate, and copper particles. The conductive carbon layer includes an sp2 bond and an sp3 bond. The copper particles are disposed in form of islands on one surface in the thickness direction of the conductive carbon layer and/or dispersed inside the conductive carbon layer.

Abstract: An electrode 1 includes a resin film 2, a metal underlying layer 3, and an electrically conductive carbon layer 4 having sp2 bonding and sp3 bonding in order toward one side in a thickness direction. A ratio of the number of sp3-bonded atoms to the sum of the number of sp3-bonded atoms and the number of sp2-bonded atoms is 0.25 or more. A thickness of the metal underlying layer 3 is below 50 nm.

Abstract: A transparent conductive film (3) includes a polycrystal (31). The polycrystal (31) has grains (32). The grains (32) have an average value Df of a maximum Feret diameter of 160 to 400 nm.

Abstract: A carbon electrode includes a substrate, and a conductive carbon layer disposed at an upper side of the substrate and having an sp2 bond and an sp3 bond. On an upper surface of the conductive carbon layer, the concentration ratio of oxygen to carbon is 0.07 or more. The ratio of a number of sp3 bonded carbon atoms to the sum of a number of sp2 bonded carbon atoms and the number of sp3 bonded carbon atoms is 0.35 or more.

Abstract: A carbon electrode includes a substrate, and a conductive carbon layer disposed at an upper side of the substrate and having an sp2 bond and an sp3 bond. On an upper surface of the conductive carbon layer, the concentration ratio of oxygen to carbon is 0.07 or more. The ratio of a number of sp3 bonded carbon atoms to the sum of a number of sp2 bonded carbon atoms and the number of sp3 bonded carbon atoms is 0.35 or more.

Abstract: An impedance matching film 10 includes a mixture containing indium oxide and tin oxide and being a main component of the impedance matching film, the mixture having an amorphous structure. The impedance matching film 10 for impedance matching has a Hall mobility of 5 cm2/(V·s) or more. The impedance matching film 10 has a thickness of 16 nm or more and less than 100 nm.

Abstract: A radio wave absorber (la) includes a resistive layer (20), an electrical conductor (30), and a dielectric layer (10). The resistive layer (20) includes indium tin oxide as a main component. The electrical conductor (30) reflects a radio wave. The dielectric layer (10) is disposed between the resistive layer (20) and the electrical conductor (30) in the thickness direction of the resistive layer (20). The dielectric layer (10) is formed of a polymer. The content of tin oxide in the indium tin oxide included in the resistive layer (20) is more than 0 weight % and less than 20 weight %. The number of hydrogen atoms included in the resistive layer (20) is 5% or more of the total number of indium atoms, tin atoms, oxygen atoms, and hydrogen atoms included in the resistive layer (20).

Abstract: An electrode film includes a flexible substrate, a functional layer disposed at one side in a thickness direction of the flexible substrate, and an electrically conductive carbon layer disposed at one side in the thickness direction of the functional layer and having an sp2 bond and an sp3 bond.

Abstract: An information reception device is provided with: operation surface which is adjusted to produce a characteristic index vibration by an object contact; a storage device stores candidate information (candidate information is related with the index vibration) which serves as a candidate of input information; a microphone which acquires observation information according to observation of the actual vibration arising in the surrounding environment; and a CPU. The CPU (selecting part) judges whether or not the index vibration exists in the observation information acquired. When the CPU judges that the index vibration exists, the CPU selects the candidate information which is related with the index vibration as the input information.

Abstract: Provided are: a transparent electroconductive film with good transparency, wherein the transparent electroconductive film has antiblocking properties that can withstand roll-to-roll manufacturing, and white haze on the transparent electroconductive film side is reduced. Also provided is a touch sensor in which the transparent electroconductive film is used. This transparent electroconductive film includes a transparent substrate 1 and a transparent electroconductive film 13 formed on one side of the transparent substrate, wherein the arithmetic mean surface roughness Ra in a 452×595 ?m field of view on the surface of the transparent electroconductive film 13 is greater than 0 nm and no more than 10 nm, and the arithmetic mean surface roughness Ra in a 452×595 ?m field of view on the surface of the transparent substrate 1 on which the transparent electroconductive film 13 is not formed is greater than 5 nm and less than 100 nm.

Abstract: An information reception device is provided with: operation surface which is adjusted to produce a characteristic index vibration by an object contact; a storage device stores candidate information (candidate information is related with the index vibration) which serves as a candidate of input information; a microphone which acquires observation information according to observation of the actual vibration arising in the surrounding environment; and a CPU. The CPU (selecting part) judges whether or not the index vibration exists in the observation information acquired. When the CPU judges that the index vibration exists, the CPU selects the candidate information which is related with the index vibration as the input information.

Abstract: Provided are: a transparent electroconductive film with good transparency, wherein the transparent electroconductive film has antiblocking properties that can withstand roll-to-roll manufacturing, and white haze on the transparent electroconductive film side is reduced. Also provided is a touch sensor in which the transparent electroconductive film is used. This transparent electroconductive film includes a transparent substrate 1 and a transparent electroconductive film 13 formed on one side of the transparent substrate, wherein the arithmetic mean surface roughness Ra in a 452×595 ?m field of view on the surface of the transparent electroconductive film 13 is greater than 0 nm and no more than 10 nm, and the arithmetic mean surface roughness Ra in a 452×595 ?m field of view on the surface of the transparent substrate 1 on which the transparent electroconductive film 13 is not formed is greater than 5 nm and less than 100 nm.

Abstract: In a conductive laminate, a transparent conductive thin film laminate 2 including at least two transparent conductive thin films and a metal layer 3 are formed in this order on at least one surface of a transparent base. In the transparent conductive thin film laminate 2, a first transparent conductive thin film 21 that is closest to the metal layer 3 is a metal oxide layer, or a composite metal oxide layer containing a principal metal and at least one impurity metal. Transparent conductive thin film 22 other than the first transparent conductive thin film is a composite metal oxide layer containing a principal metal and at least one impurity metal. The content ratio of impurity metal in the first transparent conductive thin film is not the highest of content ratios of impurity metal in the transparent conductive thin films which form the transparent conductive thin film laminate 2.

Abstract: A method for producing a transparent conductive film includes heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate including a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%).

Abstract: A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.

Abstract: There is provided a transparent conductive film which comprises: a film substrate; a plurality of transparent conductor patterns formed on the film substrate; and a pressure-sensitive adhesive layer wherein the transparent conductor patterns are embedded. The plurality of transparent conductor patterns respectively have a two-layer structure wherein a first indium tin oxide layer and a second indium tin oxide layer are laminated on the film substrate in this order, and the first indium tin oxide layer has a greater tin oxide content than the second indium tin oxide layer does. The first indium tin oxide layer has a smaller thickness than the second indium tin oxide layer does.

Abstract: A transparent conductive film comprises: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate. The transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side. The first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. The third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has.