Abstract: An information processing device includes a control unit. The control unit acquires a plurality of examination target documents, specifies an examination item as a comparison target from the plurality of acquired examination target documents, specifies examination conditions corresponding to an examination target area of the specified examination item based on examination target information, in which an examination target area is set for each examination item of the examination target documents, and examination condition information, in which examination conditions for the examination target documents are set so as to correspond to the examination target area, examines the plurality of examination target documents based on first examination conditions for a preliminary examination, examines the plurality of examination target documents based on second examination conditions for a main examination when the examination according to the first examination conditions is normal, and outputs an examination result.

Abstract: An information processing apparatus including a control unit, and the control unit acquires text data of a plurality of documents to be examined; outputs a list of pieces of information of the plurality of documents to be examined in a first display area of a display screen; if accepting selection of a piece of the information, outputs an image of at least one of the plurality of documents to be examined corresponding to a selected piece of the information, to a second display area of the display screen; outputs an examination result concerning examination items of the plurality of documents to be examined to a third display area of the display screen; and outputs a question related to examination to a fourth display area of the display screen.

Abstract: Provided is a technology for suppressing production of particles in an alumina-based sintered body. The alumina-based sintered body contains not smaller than 90 ppm and not greater than 265 ppm of yttrium (Y), and not greater than 100 ppm of calcium (Ca), and an average grain size of alumina crystal grains is not greater than 6 ?m.

Abstract: In an alumina-based sintered body containing alumina (Al2O3) as a main component and containing magnesia (MgO) whose content with respect to a content of the alumina is 0.00 mol %<MgO?0.20 mol %, a density is 3.96 g/cm3 or greater, and a standard deviation of grain sizes of alumina crystal grains is smaller than 4.0 ?m.

Abstract: A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu2O3, Gd2O3 and Al2O3 disposed between the first ceramic member and the second ceramic member.

Abstract: A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.

Abstract: The scattering of a rare earth hydroxide is suppressed, and the loss of bond strength between a first ceramic member and a second ceramic member is reduced. A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other, wherein the joint layer includes a perovskite oxide represented by ABO3 (wherein A is a rare earth element, and B is Al) and includes no rare earth single oxide containing exclusively a rare earth element and oxygen.

Abstract: A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu2O3, Gd2O3 and Al2O3 disposed between the first ceramic member and the second ceramic member.

Abstract: A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al2O3, and is free from AlN.