Abstract: An object is to provide a technique that eliminates the need for an external circuit for enhancing the breakdown voltage. A switching element drive circuit includes a primary circuit and a secondary circuit, and an insulating element isolating the primary circuit and the secondary circuit from each other in terms of a direct current. The secondary circuit includes a semiconductor substrate, a detector provided on a portion of the semiconductor substrate, including a pn junction isolation portion, and configured to detect a voltage of a high voltage terminal, and a controller provided on a remaining portion of the semiconductor substrate and configured to control a control voltage of a semiconductor switching element based on a second signal and a detection result of the detector.

Abstract: An isolation region separates a first circuit region and a second circuit region. A signal conveyance element is an element to convey a signal from the first circuit region to the second circuit region and includes at least one primary coil and two secondary coils. The at least one primary coil has opposite ends electrically connected to the first circuit region and is disposed in the isolation region. The two secondary coils each have opposite ends electrically connected to the second circuit region, are arranged to be magnetically coupled to the at least one primary coil, and are arranged in the isolation region.

Abstract: A semiconductor package includes: a semiconductor device; a lead frame; a built-in package including an insulated driver having a multi-chip configuration and driving the semiconductor device; a wire connecting the built-in package to the semiconductor device; and a resin sealing the semiconductor device, the lead frame, the built-in package, and the wire, wherein the built-in package is directly joined to the lead frame.

Abstract: A semiconductor package includes: a semiconductor device; a lead frame; a built-in package including an insulated driver having a multi-chip configuration and driving the semiconductor device; a wire connecting the built-in package to the semiconductor device; and a resin sealing the semiconductor device, the lead frame, the built-in package, and the wire, wherein the built-in package is directly joined to the lead frame.

Abstract: A first circuit generates and outputs a transmission signal to a first end and a second end of a first coil in response to variation in logical value of an input first signal. A detection circuit detects a voltage signal generated at each of a first end and a second end and outputs a second signal which reflects the first signal based on a result of detection. A control circuit controls a voltage to be applied across opposing ends of each of a first diode and a second diode of a first rectifier circuit and a voltage to be applied to opposing ends of each of a third diode and a fourth diode of a second rectifier circuit.

Abstract: A semiconductor device includes: a first IGBT and a second IGBT to constitute an inverter; a primary-side IC chip to output an electrical signal responsive to an input signal; a first secondary-side IC chip to drive the first IGBT based on the electrical signal; and a second secondary-side IC chip to drive the second IGBT based on the electrical signal. The primary-side IC chip includes insulating elements electrically insulated from the first secondary-side IC chip and the second secondary-side IC chip. The first secondary-side IC chip is stacked on the first IGBT. The second secondary-side IC chip is stacked on the second IGBT.

Abstract: A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.

Abstract: A semiconductor device includes: a first IGBT and a second IGBT to constitute an inverter; a primary-side IC chip to output an electrical signal responsive to an input signal; a first secondary-side IC chip to drive the first IGBT based on the electrical signal; and a second secondary-side IC chip to drive the second IGBT based on the electrical signal. The primary-side IC chip includes insulating elements electrically insulated from the first secondary-side IC chip and the second secondary-side IC chip. The first secondary-side IC chip is stacked on the first IGBT. The second secondary-side IC chip is stacked on the second IGBT.

Abstract: Provided is a semiconductor integrated circuit that improves insulation reliability between a high-voltage circuit and a low-voltage circuit. The semiconductor integrated circuit includes the following: a first circuit controlled by a control signal of low voltage and driven at a higher voltage; a second circuit configured to output the control signal to the first circuit to control the driving of the first circuit; and an insulation circuit including insulating elements connected to each other in series, the insulation circuit connecting between the first and the second circuits in series. The insulation circuit is configured to magnetically or capacitively couple the control signal in each insulating element to transmit the control signal from the second circuit to the first circuit, and is configured to insulate the first circuit from the second circuit in each insulating element to prevent the higher voltage from being applied between the first and second circuits.

Abstract: A first drive circuit is connected with a first power supply node and a first GND node. A second drive circuit is connected with a second power supply node and a second GND node electrically separated from the first power supply node and the first GND node, respectively. A PN junction portion is formed of a P type part electrically connected with the first GND node, and an N type part electrically connected with the second power supply node. A magnetic coupling element has a first conductor coil and a second conductor coil. The first conductor coil is electrically connected with output nodes of the first drive circuit. The second conductor coil is electrically connected with input nodes of the second drive circuit.

Abstract: A first drive circuit is connected with a first power supply node and a first GND node. A second drive circuit is connected with a second power supply node and a second GND node electrically separated from the first power supply node and the first GND node, respectively. A PN junction portion is formed of a P type part electrically connected with the first GND node, and an N type part electrically connected with the second power supply node. A magnetic coupling element has a first conductor coil and a second conductor coil. The first conductor coil is electrically connected with output nodes of the first drive circuit. The second conductor coil is electrically connected with input nodes of the second drive circuit.

Abstract: A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.

Abstract: A first circuit generates and outputs a transmission signal to a first end and a second end of a first coil in response to variation in logical value of an input first signal. A detection circuit detects a voltage signal generated at each of a first end and a second end and outputs a second signal which reflects the first signal based on a result of detection. A control circuit controls a voltage to be applied across opposing ends of each of a first diode and a second diode of a first rectifier circuit and a voltage to be applied to opposing ends of each of a third diode and a fourth diode of a second rectifier circuit.

Abstract: A drive device to drive a semiconductor element includes: an identification signal generating circuit generating an identification signal depending on a type of an input error signal; a protection operation signal generating circuit generating a protection operation signal having a pulse width equal to that of one of the error signal and the identification signal having a longer pulse width; an identification signal terminal inputting and outputting the identification signal; a protection operation signal terminal inputting and outputting the protection operation signal; and a protection circuit performing an error protection operation depending on an own-phase protection operation signal generated by the protection operation signal generating circuit and an other-phase protection operation signal input through the protection operation signal terminal.

Abstract: A signal transmission device relating to a technique disclosed in the specification of the present application includes: an isolation transformer; an input-side circuit connected to an input side of the isolation transformer; and an output-side circuit connected to an output side of the isolation transformer. The output-side circuit includes a first differential circuit having a first input and a second input connected to the first terminal and the second terminal respectively. A reference potential of the first differential circuit is connected to the second terminal.

Abstract: Provided is a semiconductor integrated circuit that improves insulation reliability between a high-voltage circuit and a low-voltage circuit. The semiconductor integrated circuit includes the following: a first circuit controlled by a control signal of low voltage and driven at a higher voltage; a second circuit configured to output the control signal to the first circuit to control the driving of the first circuit; and a plurality of insulation circuits each including an insulating element, the plurality of insulation circuits connecting between the first and the second circuits in series. Each insulation circuit is configured to magnetically or capacitively couple the control signal in the insulating element to transmit it from the second circuit to the first circuit, and is configured to insulate the first circuit from the second circuit in the insulating element to prevent the higher voltage from being applied from the first circuit to the second circuit.

Abstract: Provided is a semiconductor integrated circuit that improves insulation reliability between a high-voltage circuit and a low-voltage circuit. The semiconductor integrated circuit includes the following: a first circuit controlled by a control signal of low voltage and driven at a higher voltage; a second circuit configured to output the control signal to the first circuit to control the driving of the first circuit; and an insulation circuit including insulating elements connected to each other in series, the insulation circuit connecting between the first and the second circuits in series. The insulation circuit is configured to magnetically or capacitively couple the control signal in each insulating element to transmit the control signal from the second circuit to the first circuit, and is configured to insulate the first circuit from the second circuit in each insulating element to prevent the higher voltage from being applied between the first and second circuits.

Abstract: A signal transmission device relating to a technique disclosed in the specification of the present application includes: an isolation transformer; an input-side circuit connected to an input side of the isolation transformer; and an output-side circuit connected to an output side of the isolation transformer. The output-side circuit includes a first differential circuit having a first input and a second input connected to the first terminal and the second terminal respectively. A reference potential of the first differential circuit is connected to the second terminal.

Abstract: A drive device to drive a semiconductor element includes: an identification signal generating circuit generating an identification signal depending on a type of an input error signal; a protection operation signal generating circuit generating a protection operation signal having a pulse width equal to that of one of the error signal and the identification signal having a longer pulse width; an identification signal terminal inputting and outputting the identification signal; a protection operation signal terminal inputting and outputting the protection operation signal; and a protection circuit performing an error protection operation depending on an own-phase protection operation signal generated by the protection operation signal generating circuit and an other-phase protection operation signal input through the protection operation signal terminal.

Abstract: A drive circuit of the present invention, which drives a switching device in response to a control signal, includes: a current mirror circuit including an output transistor connected to a control electrode of the switching device and a reference transistor that is connected to the output transistor in a current mirror manner and supplies a mirror current to the output transistor; and a potential change circuit that is connected to the reference transistor and changes a control potential of the output transistor from a potential during mirror operation of the current mirror circuit.