Abstract: After electrode patterning on an electrode forming surface of a piezoelectric substrate 2 (FIG. 1(b)), a conductor layer is formed on an electrode non-forming surface of the piezoelectric substrate 2 (FIG. 1(c)). After forming the conductor layer, the conductor layer formed on the other surface is removed (FIG. 1(f)) after at least one step (FIG. 1(e)), and thereafter, dicing for separation into elements and mounting on a mounting substrate are carried out. By removing all the conductor layer on the other surface of the piezoelectric substrate, the out-of-passband attenuation and isolation performance can be significantly improved.

Abstract: A rotary electric machine includes a frame, a rectifying unit fixed to the frame, a rotor accommodated in the frame, a voltage regulator having a regulator section, an arm extending from the regulator section in a circumferential direction and a connector. The arm has a mounting potion at an end, and the connector is disposed between the mounting potion and the regulator portion.

Abstract: In a vehicle alternator having a stator, a rotor, and frames, a disc group is fixed to an axial end surface of a magnetic pole core of the rotor for creating the flow of cooling air. The disc group includes a plurality of discs layered with gaps between them. The disc group is disposed rotatable with the rotor. When the disc group rotates with the rotor, cooling air flows in a radially outward direction along the disc surfaces.

Abstract: IDT electrodes are arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave whereas reflectors are each interposed between a respective pair of IDT electrodes, the reflectors each including four or more electrode fingers extended perpendicularly to the propagation direction. An electrode-finger pitch ‘a’ of the reflector is progressively decreased from the opposite ends of the reflector toward the center thereof. Frequencies allowed to pass through a pass band may be controlled by varying the electrode-finger pitch. Thus is provided a surface acoustic wave device featuring a wide-band transmission performance.

Abstract: An ac generator for a vehicle includes a rotor having a field coil, a stator having a stator winding disposed around the rotor to provide ac power in cooperation with the rotor, a brush unit disposed near a rotation axis of the rotor, and a voltage regulator for controlling output voltage of the ac power. The voltage regulator has a regulator circuit section and a heat sink for dissipating heat generated by the regulator circuit section. The heat sink has a plurality of axially projecting cooling fins that extends in a circumferential direction of the rotor.

Abstract: The present invention provides an AC generator for a vehicle, capable of improving the cooling capability and environmental resistance of a rectifier. The rectifier of the vehicle AC generator includes a positive electrode side radiating fin and negative electrode side radiating fin disposed in piles in a axial direction, a positive electrode side rectifying elements and negative electrode side rectifying elements provided in the radiating fins, respectively, and a terminal board. The positive electrode side radiating fin is equipped with cylindrical fixing portions to which the positive electrode side rectifying elements are fixed and radial sub-fins extending radially from the fixing portions. An opening portion surrounded by the fixing portion, the radial sub-fin and others forms an axial air flow passage.

Abstract: A small-diameter fin and a large-diameter fin, each extending in a direction normal to an axial direction of a rotor, are disposed at both sides of a terminal base so as to be overlapped in the axial direction of the rotor. The small-diameter fin is disposed far from the rotor compared with the large-diameter fin. The small-diameter fin is provided with a plurality of independent ribs each protruding in the axial direction of the rotor and extending in a radial direction of the rotor from or along an opening periphery of the receiving hole of the rectifying element.

Abstract: In a surface acoustic wave element 10, in which IDT electrodes 31 and 32, a grounding electrode 37, etc. are formed one main surface of a piezoelectric substrate 20, resistors 40 made of a semiconductor are provided to connection electrodes 38 that interconnect the respective electrodes. By forcing the charges generated in the IDT electrodes to move via the resistors 40, it is possible to provide a compact, highly reliable surface acoustic wave apparatus capable of preventing an electrostatic discharge damage in the IDT electrodes.

Abstract: In a vehicle alternator having a stator, a rotor, and frames, a disc group is fixed to an axial end surface of a magnetic pole core of the rotor for creating the flow of cooling air. The disc group includes a plurality of discs layered with gaps between them. The disc group is disposed rotatable with the rotor. When the disc group rotates with the rotor, cooling air flows in a radially outward direction along the disc surfaces.

Abstract: A small-diameter fin and a large-diameter fin, each extending in a direction normal to an axial direction of a rotor, are disposed at both sides of a terminal base so as to be overlapped in the axial direction of the rotor. The small-diameter fin is disposed far from the rotor compared with the large-diameter fin. The small-diameter fin is provided with a plurality of independent ribs each protruding in the axial direction of the rotor and extending in a radial direction of the rotor from or along an opening periphery of the receiving hole of the rectifying element.

Abstract: A rotor and a stator are contained in a housing composed of front and rear frames, and a rectifier is mounted on the rear frame and covered with a rear cover having axial and radial openings. A minus heatsink plate having cooling fins extending in the axial direction is disposed to face the radial openings, forming radial air passages, and another air passage is formed between the minus heatsink plate and the rear frame. Cooling air introduced from the radial openings flows through the cooling fins and through the passage between the minus heatsink plate and the rear frame. Thus, efficiency for cooling the rectifier is enhanced.

Abstract: Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

Abstract: Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.

Abstract: A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: A silicon substance is etched by using alkaline etchant containing additive (Cu, Pb, Mg). The content of the additive is controlled intentionally to provide desired etching quality during an etching operation.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.