Abstract: An electric wheelchair includes a main frame; a drivable wheel supported by the main frame; an electric motor disposed on the main frame and configured to drive the drivable wheel; a clutch configured to switch a power transmission path from the electric motor to the drivable wheel between an engagement state and a disengagement state; and a clutch operation handle configured to be moved in a predetermined range in an up-down direction. The clutch operation handle is configured to operate the clutch so as to be in: (i) one of the engagement state or the disengagement state when the clutch operation handle is stopped at a lowest position of the predetermined range; and (ii) the other of the engagement state or the disengagement state when the clutch operation handle is stopped at a highest position of the predetermined range.

Abstract: According to one embodiment, a semiconductor memory device includes: a word line; a first memory cell; a first circuit; and a second circuit. The first memory cell is connected to the word line. The first circuit generates a first voltage having a waveform including a first time period during which a voltage value increases with time and a second time period during which the voltage value decreases with time, and applies the generated first voltage to the word line. The second circuit measures first time from a first timing when a state of the first memory cell changes according to the first voltage to a second timing when the state of the first memory cell changes according to the first voltage after the first timing. The second circuit determines first data stored in the first memory cell on the basis of the measured first time.

Abstract: According to one embodiment, a semiconductor memory device includes: a word line; a first memory cell; a first circuit; and a second circuit. The first memory cell is connected to the word line. The first circuit generates a first voltage having a waveform including a first time period during which a voltage value increases with time and a second time period during which the voltage value decreases with time, and applies the generated first voltage to the word line. The second circuit measures first time from a first timing when a state of the first memory cell changes according to the first voltage to a second timing when the state of the first memory cell changes according to the first voltage after the first timing. The second circuit determines first data stored in the first memory cell on the basis of the measured first time.