Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: A method of manufacturing a semiconductor device includes: a wire tail forming step of forming a wire loop 130 between a first bonding point and a second bonding point with a bonding tool 40, and then cutting a portion of a wire 42 extending from a tip of the bonding tool 40 to thereby form a wire tail 43 at the tip of the bonding tool 40; and a wire tail bending step of bending the wire tail 43 so as to direct a tip 43a of the wire tail 43 upward by descending the bonding tool 40 toward the second bonding point with the wire loop 130 formed thereat and pressing the wire tail 43 against a portion of the wire loop 130 located above the second bonding point. Thus, the wire tail can be bent easily and efficiently.

Abstract: Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) inserted; and a controller (80). The controller (80) is configured to execute operations including: a disconnection operation, after the second bonding operation, of moving the capillary through which the wire is inserted within a horizontal plane vertical to an axial direction of the capillary while the wire is held in the clamped state, and thereby disconnecting the wire from the second bonding point; a preliminary bonding operation of feeding the wire from the second bonding point to a predetermined preliminary bonding point, and performing preliminary bonding at the preliminary bonding point; and a shaping operation, after the preliminary bonding operation, of shaping the wire projecting from a tip of the capillary into a predetermined flexed shape.

Abstract: A method of manufacturing a semiconductor device includes: a wire tail forming step of forming a wire loop 130 between a first bonding point and a second bonding point with a bonding tool 40, and then cutting a portion of a wire 42 extending from a tip of the bonding tool 40 to thereby form a wire tail 43 at the tip of the bonding tool 40; and a wire tail bending step of bending the wire tail 43 so as to direct a tip 43a of the wire tail 43 upward by descending the bonding tool 40 toward the second bonding point with the wire loop 130 formed thereat and pressing the wire tail 43 against a portion of the wire loop 130 located above the second bonding point. Thus, the wire tail can be bent easily and efficiently.

Abstract: Provided is a wire-bonding apparatus 10 including a capillary 28 through which a wire 30 is inserted, a nonsticking determination circuit 36, and a controller 80. The nonsticking determination circuit 36 applies a predetermined alternating-current electrical signal between the wire held by the capillary and the bonding target, obtains a capacitance value between the wire held by the capillary and the bonding target, determines that the wire is disconnected from the bonding target when the capacitance value decreases after the first bonding operation, and determines that the disconnected wire drops down and is brought into contact with the bonding target when the capacitance value returns to an original value before reaching the second bonding point.

Abstract: A semiconductor device includes a common wire that sequentially connects three or more pads; bonding portions at which a side surface of the wire is bonded to the pads; and looping portions looped from the bonding portions onto the other pads adjacent to the pads, the bonding portions and the looping portions are formed alternately. When the pads are recessed from the surface of semiconductor chips, the common wire is crushed to a thickness greater than the recess depth of the pads to be made into a flat shape. Thus, on the semiconductor device, wire connection is performed with a smaller bonding count while reducing damage to the semiconductor chips, and at the same time bonding is performed efficiently to the electrodes recessed from the surface of the semiconductor chips.

Abstract: Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) is inserted; a nonsticking determination circuit (36) configured to apply a predetermined electrical signal between a bonding target and the wire (30) in a clamped state and to determine whether or not the wire (30) and the bonding target is sticking as well as whether or not the wire (30) is disconnected based on a response of the application of the predetermined electrical signal; an annular projecting length detection ring (40) disposed coaxially with the capillary (28); and a projecting length determination circuit (38) configured to determine whether or not a projecting length of a wire tail projecting from the tip of the capillary (28) is appropriate based on detection on whether or not power is conductive when a predetermined inspection voltage is applied between the wire (30) and the projecting length detection ring (40) as well as a presence of a discharge spark when a predetermined inspection high voltage

Abstract: Provided is a wire bonding apparatus capable of performing high-speed wedge wire bonding, the apparatus including: a bonding tool having a through hole and a pressing surface for pressing a wire; a clamper for holding the wire; and a control unit. The control unit includes: wire tail extension unit that moves the bonding tool, after wedge bonding of the wire to a first lead, upward and along a second straight line connecting a second pad and a second lead, and causes the wire to extend from the through hole in a direction along the second straight line from the second pad to the second lead; and tail cut unit that, after causing the wire tail to extend, cuts the wire tail by moving the bonding tool in the direction along the second straight line connecting the second pad and the second lead while the clamper is closed.

Abstract: Provided is a wire bonding apparatus capable of performing high-speed wedge wire bonding, the apparatus including: a bonding tool having a through hole and a pressing surface for pressing a wire; a clamper for holding the wire; and a control unit. The control unit includes: wire tail extension unit that moves the bonding tool, after wedge bonding of the wire to a first lead, upward and along a second straight line connecting a second pad and a second lead, and causes the wire to extend from the through hole in a direction along the second straight line from the second pad to the second lead; and tail cut unit that, after causing the wire tail to extend, cuts the wire tail by moving the bonding tool in the direction along the second straight line connecting the second pad and the second lead while the clamper is closed.

Abstract: A semiconductor device includes a common wire that sequentially connects three or more pads; bonding portions at which a side surface of the wire is bonded to the pads; and looping portions looped from the bonding portions onto the other pads adjacent to the pads, the bonding portions and the looping portions are formed alternately. When the pads are recessed from the surface of semiconductor chips, the common wire is crushed to a thickness greater than the recess depth of the pads to be made into a flat shape. Thus, on the semiconductor device, wire connection is performed with a smaller bonding count while reducing damage to the semiconductor chips, and at the same time bonding is performed efficiently to the electrodes recessed from the surface of the semiconductor chips.

Abstract: Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) inserted; and a controller (80). The controller (80) is configured to execute operations including: a disconnection operation, after the second bonding operation, of moving the capillary through which the wire is inserted within a horizontal plane vertical to an axial direction of the capillary while the wire is held in the clamped state, and thereby disconnecting the wire from the second bonding point; a preliminary bonding operation of feeding the wire from the second bonding point to a predetermined preliminary bonding point, and performing preliminary bonding at the preliminary bonding point; and a shaping operation, after the preliminary bonding operation, of shaping the wire projecting from a tip of the capillary into a predetermined flexed shape.

Abstract: Provided is a wire-bonding apparatus 10 including a capillary 28 through which a wire 30 is inserted, a nonsticking determination circuit 36, and a controller 80. The nonsticking determination circuit 36 applies a predetermined alternating-current electrical signal between the wire held by the capillary and the bonding target, obtains a capacitance value between the wire held by the capillary and the bonding target, determines that the wire is disconnected from the bonding target when the capacitance value decreases after the first bonding operation, and determines that the disconnected wire drops down and is brought into contact with the bonding target when the capacitance value returns to an original value before reaching the second bonding point.

Abstract: Provided is a wire-bonding apparatus (10) including: a capillary (28) through which a wire (30) is inserted; a nonsticking determination circuit (36) configured to apply a predetermined electrical signal between a bonding target and the wire (30) in a clamped state and to determine whether or not the wire (30) and the bonding target is sticking as well as whether or not the wire (30) is disconnected based on a response of the application of the predetermined electrical signal; an annular projecting length detection ring (40) disposed coaxially with the capillary (28); and a projecting length determination circuit (38) configured to determine whether or not a projecting length of a wire tail projecting from the tip of the capillary (28) is appropriate based on detection on whether or not power is conductive when a predetermined inspection voltage is applied between the wire (30) and the projecting length detection ring (40) as well as a presence of a discharge spark when a predetermined inspection high voltage

Abstract: Provided is a semiconductor die pick-up apparatus including a stage, a suction opening, a cover that opens and closes a suction opening, and projections and primary holes arranged at a circumferential edge of the suction opening and project from a contact surface. When picking up a semiconductor die, in a state in which at least a portion of a contour of the semiconductor die sticks out from the projections toward the outer circumference of the stage, a retaining sheet at the portion sticking out from the primary holes is suctioned, a tip end of the cover is caused to advance upward, the cover is caused to slide while pushing the retaining sheet and the semiconductor die upward to open the suction opening sequentially, the opened suction opening is caused to suction the retaining sheet sequentially to separate the retaining sheet from the semiconductor die.

Abstract: Provided is a wire bonding apparatus capable of performing high-speed wedge wire bonding, the apparatus including: a bonding tool having a through hole and a pressing surface for pressing a wire; a clamper for holding the wire; and a control unit. The control unit includes: wire tail extension unit that moves the bonding tool, after wedge bonding of the wire to a first lead, upward and along a second straight line connecting a second pad and a second lead, and causes the wire to extend from the through hole in a direction along the second straight line from the second pad to the second lead; and tail cut unit that, after causing the wire tail to extend, cuts the wire tail by moving the bonding tool in the direction along the second straight line connecting the second pad and the second lead while the clamper is closed.

Abstract: Provided is a semiconductor die pick-up apparatus including a stage, a suction opening, a cover that opens and closes a suction opening, and projections and primary holes arranged at a circumferential edge of the suction opening and project from a contact surface. When picking up a semiconductor die, in a state in which at least a portion of a contour of the semiconductor die sticks out from the projections toward the outer circumference of the stage, a retaining sheet at the portion sticking out from the primary holes is suctioned, a tip end of the cover is caused to advance upward, the cover is caused to slide while pushing the retaining sheet and the semiconductor die upward to open the suction opening sequentially, the opened suction opening is caused to suction the retaining sheet sequentially to separate the retaining sheet from the semiconductor die.