Abstract: There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 ?m, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.

Abstract: To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio CAu/CNi of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02 or more and 0.

Abstract: There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio CNi/CPd of a concentration CNi (mass %) of Ni to a concentration CPd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.

Abstract: The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d, the thickness d (nm) of the coating layer is 10?d?130, a ratio of a concentration CNi (mass %) of Ni to a concentration CPd (mass %) of Pd relative to the entire wire is 0.02<CNi/CPd?0.7, and a position indicating a maximum concentration of Ni which is 10 atomic % or more, is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire.

Abstract: The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02<CAu/CNi?0.7, and a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less.

Abstract: A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

Abstract: A scattering absorber measurement device includes a light source for outputting a plurality of light pulses having different wavelengths input to a scattering absorber, a photodetector for detecting each light pulse propagating inside the scattering absorber and output a detection signal, and a computation unit for calculating a reduced scattering coefficient and an absorption coefficient according to a time-resolved spectroscopic measurement method on the basis of the detection signal. The computation unit determines data related to a ratio of reduced scattering coefficients among wavelengths of the plurality of light pulses and calculates the reduced scattering coefficient and the absorption coefficient on the basis of a time-resolved measurement profile of each wavelength based on the detection signal and the data related to the ratio.

Abstract: A scattering absorber measurement device includes a light source for outputting a plurality of light pulses having different wavelengths input to a scattering absorber, a photodetector for detecting each light pulse propagating inside the scattering absorber and output a detection signal, and a computation unit for calculating a reduced scattering coefficient and an absorption coefficient according to a time-resolved spectroscopic measurement method on the basis of the detection signal. The computation unit determines data related to a ratio of reduced scattering coefficients among wavelengths of the plurality of light pulses and calculates the reduced scattering coefficient and the absorption coefficient on the basis of a time-resolved measurement profile of each wavelength based on the detection signal and the data related to the ratio.

Abstract: Light irradiates one light incident position on the surface of a scattering-absorption body. The light that propagates through the interior of the scattering-absorption body is detected at one light detecting position on the surface of the scattering-absorption body. On the basis of a light detection signal, a temporal profile of the light intensity of the detected light is acquired, and on the basis of the temporal profile, an mean optical path length of the light in the interior of the scattering-absorption body and information relating to the amount of substance to be measured in a region to be measured are calculated. The information relating to the amount of substance to be measured is corrected on the basis of the mean optical path length, such that the longer the mean optical path length, the greater the amount of substance to be measured is.

Abstract: In the estimation method, MRI indexes (such as ADC and FA) are estimated based on a scattering coefficient ?s? of a measurement site B or a parameter having a correlation with the scattering coefficient ?s?, the scattering coefficient ?s? being obtained by a near-infrared spectroscopy based on a detection result of near-infrared light made incident on the measurement site B and propagated inside the measurement site B.

Abstract: Light irradiates one light incident position on the surface of a scattering-absorption body. The light that propagates through the interior of the scattering-absorption body is detected at one light detecting position on the surface of the scattering-absorption body. On the basis of a light detection signal, a temporal profile of the light intensity of the detected light is acquired, and on the basis of the temporal profile, an mean optical path length of the light in the interior of the scattering-absorption body and information relating to the amount of substance to be measured in a region to be measured are calculated. The information relating to the amount of substance to be measured is corrected on the basis of the mean optical path length, such that the longer the mean optical path length, the greater the amount of substance to be measured is.

Abstract: Optical pulses emitted from an optical pulse source is incident on a living tissue and is input to an optical sampling unit. An optical sampling unit detects intensities, f, of optical pulses detected at the respective timings of trigger signals input from a delay unit. A first accumulator calculates products, t.multidot.f, of the intensities f and the delay times t from the delay unit. A second accumulator accumulates the light intensities f. An average optical pathlength calculating unit calculates an average optical pathlength using the accumulation results as the products t.multidot.f and the intensities f. An SO.sub.2 value calculating unit calculates a ratio of V.sub.HbO2 to V.sub.Hb from the average optical pathlength to calculate an SO.sub.2 value.