Abstract: A temperature sensor 1 includes: a thermosensitive element 2 composed of a low-thermal expansion ceramics having a coefficient of linear expansion of 3×10?6/° C. to 5×10?6/° C. and of which electrical characteristics change depending on temperature; a pair of electrode films 20 provided on the surfaces of the thermosensitive element 2; and a pair of lead wires having a coefficient of linear expansion of 15×10?6/° C. or less and bonded to the electrode films 20. When the coefficients of linear expansion of the thermosensitive element 2, the electrode film 20, and the lead wire 21 are respectively Ta(/° C.), Tb(/° C.), and Td(/° C.), the temperature sensor 1 satisfies a relationship Ta?Tb?Td.

Abstract: A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element ? having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element ? in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from ?50° C. to 1050° C.

Abstract: A temperature sensor 1 includes: a thermosensitive element 2 composed of a low-thermal expansion ceramics having a coefficient of linear expansion of 3×10?6/° C. to 5×10?6/° C. and of which electrical s characteristics change depending on temperature; a pair of electrode films 20 provided on the surfaces of the thermosensitive element 2; and a pair of lead wires having a coefficient of linear expansion of 15×10?6/° C. or less and bonded to the electrode films 20. When the coefficients of linear expansion of the thermosensitive element 2, the electrode film 20, and the lead wire 21 are respectively Ta(/° C.), Tb(/° C.), and Td(/° C.), the temperature sensor 1 satisfies a relationship Ta?Tb?Td.

Abstract: A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element ? having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element ? in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from ?50° C. to 1050° C.