Abstract: A piezoelectric device including: a substrate; a lower electrode formed over the substrate; a piezoelectric layer formed over the lower electrode and including lead zirconate titanate; and an upper electrode formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.

Abstract: Disclosed is an actuator device which includes a vibration plate and a piezoelectric element. The vibration plate includes an elastic film which is made of silicon oxide (SiO2) and which is formed on a substrate while the piezoelectric element is formed on the vibration plate and including a lower electrode, a piezoelectric layer and an upper electrode. The vibration plate has such a stress as to give a tensile stress between 300 MPa and 500 MPa, inclusive, to the piezoelectric element that is in a state of being displaced.

Abstract: An actuator device includes: a layer provided on a single crystal silicon (Si) substrate, and made of silicon dioxide (SiO2); at least one buffer layer provided on the layer made of silicon dioxide (SiO2); a base layer provided on the buffer layer, and made of lanthanum nickel oxide (LNO) having the (100) plane orientation; and a piezoelectric element. The piezoelectric element includes: a lower electrode provided on the base layer, and made of platinum (Pt) having the (100) plane orientation; a piezoelectric layer made of a ferroelectric layer whose plane orientation is the (100) orientation, the piezoelectric layer formed on the lower electrode by epitaxial growth where a crystal system of at least one kind selected from a group consisting of a tetragonal system, a monoclinic system and a rhombohedral system dominates the other crystal systems; and an upper electrode provided on the piezoelectric layer.

Abstract: Provided are a piezoelectric element, an actuator device, a liquid-jet head and a liquid-jet apparatus which exhibit excellent displacement characteristics; and the piezoelectric element is configured of a lower electrode, a piezoelectric layer and an upper electrode, in which piezoelectric element the proportion of the (100) planes present in the face surface of the piezoelectric layer to the (100), (110) and (111) planes present therein is not less than 70%, and in which piezoelectric element the proportion of the (100), (110) and (210) planes present in the vertical surface orthogonal to the face surface of the piezoelectric layer to the (100), (110), (210), (111) and (211) planes present therein is not less than 80%.

Abstract: Provided are an a piezoelectric element, an actuator device, a liquid-jet head and a liquid-jet apparatus which exhibit excellent displacement characteristics; the piezoelectric element is configured of a lower electrode, a piezoelectric layer and an upper electrode; and the half-value width of the (100) planes is not larger than 0.2 degrees, and the half-value width of the (200) planes is not smaller than 0.25 degrees, when the face surface of the piezoelectric layer is measured by means of the wide-angle X-ray diffraction method.

Abstract: A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C.