Abstract: There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.

Abstract: There is provided a technique that includes: (a) supplying an adsorption suppressor to a substrate having a surface on which a first base and a second base are exposed under a first temperature to adsorb the adsorption suppressor on a surface of one base of the first base and the second base; (b) thermally annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base; and (c) forming a film on a surface of the other base different from the one base of the first base and the second base by supplying a film-forming gas to the thermally-annealed substrate under a third temperature lower than the second temperature.

Abstract: Described herein is a technique capable of selectively growing a film with a high selectivity on a substrate with surface portions of different materials. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) forming a second metal film on a substrate with a first metal film and an insulating film formed thereon by alternately supplying a metal-containing gas and a reactive gas onto the substrate, wherein an incubation time on the insulating film is longer than that on the first metal film; and (b) supplying an etching gas onto the substrate to remove the second metal film formed on the insulating film while allowing the second metal film to remain on the first metal film, wherein the second metal film is selectively grown on the first metal film by alternately repeating (a) and (b).

Abstract: There is provided a technique that includes: modifying a surface of first base exposed on a substrate by supplying modifying gas including the first base and second base exposed on the substrate; and selectively forming a film containing at least first element and second element different from the first element on a surface of the second base by supplying precursor gas to the substrate after the surface of the first base is modified, under condition that film-forming reaction by thermal decomposition of the precursor gas does not substantially occur, the precursor gas containing a compound in which atoms of the first element are contained in one molecule, at least one atom of the second element is interposed between two atoms of the first element, and each of the two atoms of the first element is directly bonded to one of the at least one atom of the second element.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of substrate by supplying modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate; (b) selectively forming a first film on a surface of the second base by supplying first film-forming gas to the substrate after performing (a); (c) etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying first fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and (d) selectively forming a second film on the first film formed on the surface of the second base by supplying second film-forming gas to the substrate after performing (c).

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

Abstract: There is provide a technique that includes: etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film from a surface of a substrate by supplying a first inorganic material to the substrate wherein a first film and a second film different from the first film are exposed on the surface of the substrate; (b) forming an oxide film by oxidizing a surface of the first film by supplying an oxidizing agent to the substrate; (c) modifying the surface of the first film by supplying a second inorganic material to the substrate; and (d) selectively growing a thin film on a surface of the second film by supplying a deposition gas to the substrate, wherein (a) through (d) are sequentially performed.

Abstract: A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.

Abstract: There is provided a technique that includes: modifying a first surface of a substrate by supplying a modifying gas containing an inorganic ligand to the substrate including the first surface and a second surface different from the first surface; and selectively growing a film on the second surface by supplying a deposition gas to the substrate.

Abstract: There is included (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.

Abstract: There is provided a technique that includes: (a) modifying a surface of one base among a first base and a second base to be F-terminated by supplying a fluorine-containing radical generated from a fluorine-containing gas to a substrate where the first base and the second base are exposed at a surface of the substrate; and (b) forming a film on a surface of the other base, which is different from the one base, among the first base and the second base by supplying a film-forming gas to the substrate after modifying the surface of the one base.

Abstract: There is provided a technique that includes selectively doping a metal film with a dopant by performing: supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped; and removing the dopant-containing gas from above the substrate.

Abstract: There is provided a technique that includes filling a concave portion formed on a surface of a substrate with a first film and a second film by performing: (a) forming the first film having a hollow portion using a first precursor so as to fill the concave portion formed on the surface of the substrate; (b) etching a portion of the first film which makes contact with the hollow portion, using an etching agent; and (c) forming the second film on the first film of which the portion is etched, using a second precursor, wherein (b) includes performing, a predetermined number of times: (b-1) modifying a portion of the first film using a modifying agent; and (b-2) selectively etching the modified portion of the first film using the etching agent.

Abstract: Described herein is a technique capable of selectively growing a film with a high selectivity on a substrate with surface portions of different materials. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) forming a second metal film on a substrate with a first metal film and an insulating film formed thereon by alternately supplying a metal-containing gas and a reactive gas onto the substrate, wherein an incubation time on the insulating film is longer than that on the first metal film; and (b) supplying an etching gas onto the substrate to remove the second metal film formed on the insulating film while allowing the second metal film to remain on the first metal film, wherein the second metal film is selectively grown on the first metal film by alternately repeating (a) and (b).

Abstract: Described herein is a technique capable of processing a film with a high dielectric constant with high accuracy. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) forming a metal fluoride film on a substrate on which a metal oxide film is exposed by supplying a fluorine-containing gas to the substrate and fluoridizing the metal oxide film; and (b) chloridizing and volatilizing the metal fluoride film by supplying a chlorine-containing gas to the substrate on which the metal fluoride film is formed.

Abstract: There is provided a technique that includes (a) forming halogen terminated sites on a surface of a substrate having a base film formed thereon by supplying a halogen-containing gas to the substrate; and (b) terminating the surface of the substrate with hydroxyl group by supplying a hydroxyl-containing gas containing

Abstract: The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.

Abstract: A method for improving a film formation rate and forming a film having a high dry etching resistance is disclosed. The method includes forming a metal nitride layer containing the metal element and the nitrogen element by performing a predetermined number of times in a time division manner supplying a halogen-based source gas containing the metal element to the substrate and supplying a reaction gas containing the nitrogen element and reacting with the metal element to the substrate; and forming a metal carbonitride layer containing the metal element, the carbon element, and the nitrogen element by performing a predetermined number of times in a time division manner supplying an organic-based source gas containing the metal element and the carbon element to the substrate and supplying the reaction gas to the substrate.