Patents by Inventor Motonobu JOKO
Motonobu JOKO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11114836Abstract: The present invention relates to a semiconductor device and it is an object of the present invention to provide a semiconductor device that makes it easy to change a specification on driving of a power semiconductor element or control of a protection operation thereof. The semiconductor device includes a power semiconductor element, a main electrode terminal of the power semiconductor element, a sensor section that emits a signal corresponding to a physical state of the power semiconductor element, a sensor signal terminal connected to the sensor section, a drive terminal that supplies power to drive the power semiconductor element and a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal, and the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.Type: GrantFiled: April 8, 2016Date of Patent: September 7, 2021Assignee: Mitsubishi Electric CorporationInventors: Rei Yoneyama, Fumitaka Tametani, Manabu Matsumoto, Haruhiko Takemoto, Hiroshi Yoshida, Motonobu Joko
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Patent number: 10861756Abstract: A semiconductor device comprises a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, and a main electrode terminal through which a main current of the power device flows. The semiconductor device further comprises a sensor signal terminal connected to the sensor for receiving a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal. The first and second terminals electrically conduct with each other to form a double structure. Also, the sensor signal terminal and the driving terminal each have a first terminal and a second terminal which are not embedded within the case.Type: GrantFiled: February 6, 2019Date of Patent: December 8, 2020Assignee: Mitsubishi Electric CorporationInventors: Motonobu Joko, Rei Yoneyama
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Publication number: 20190172763Abstract: A semiconductor device comprises a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, and a main electrode terminal through which a main current of the power device flows. The semiconductor device further comprises a sensor signal terminal connected to the sensor for receiving a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal. The first and second terminals electrically conduct with each other to form a double structure. Also, the sensor signal terminal and the driving terminal each have a first terminal and a second terminal which are not embedded within the case.Type: ApplicationFiled: February 6, 2019Publication date: June 6, 2019Applicant: Mitsubishi Electric CorporationInventors: Motonobu JOKO, Rei YONEYAMA
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Patent number: 10290555Abstract: A semiconductor device comprises a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, and a main electrode terminal through which a main current of the power device flows. The semiconductor device further comprises a sensor signal terminal connected to the sensor for receiving a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal. The first and second terminals electrically conduct with each other to form a double structure. Also, the sensor signal terminal and the driving terminal each have a first terminal and a second terminal which are not embedded within the case.Type: GrantFiled: December 9, 2016Date of Patent: May 14, 2019Assignee: Mitsubishi Electric CorporationInventors: Motonobu Joko, Rei Yoneyama
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Publication number: 20170330810Abstract: Provided are a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, a main electrode terminal through which a main current of the power device flows, a sensor signal terminal which is connected to the sensor to receive a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal, the sensor signal terminal and the driving terminal each having a first terminal and a second terminal which are provided away from an inner side wall surface of the case, the first and second terminals electrically conducting to each other to form a double structure.Type: ApplicationFiled: December 9, 2016Publication date: November 16, 2017Applicant: Mitsubishi Electric CorporationInventors: Motonobu JOKO, Rei YONEYAMA
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Patent number: 9647443Abstract: A fuse, a resistor, and a transistor, which serve as an abnormality history setting unit, are provided in series between external terminals. The transistor receives a specific abnormality detection signal on its base from an abnormality detection circuit. The specific abnormality detection signal becomes “H” level in order to bring the transistor into an on state when a specific abnormal phenomenon to be detected occurs out of plural types of abnormal phenomena. The abnormality history setting unit executes an abnormality history operation for turning on the transistor and allowing a current exceeding a disconnection level to flow through the fuse provided between the external terminals to disconnect the fuse.Type: GrantFiled: June 3, 2014Date of Patent: May 9, 2017Assignee: Mitsubishi Electric CorporationInventor: Motonobu Joko
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Publication number: 20170063071Abstract: The present invention relates to a semiconductor device and it is an object of the present invention to provide a semiconductor device that makes it easy to change a specification on driving of a power semiconductor element or control of a protection operation thereof. The semiconductor device includes a power semiconductor element, a main electrode terminal of the power semiconductor element, a sensor section that emits a signal corresponding to a physical state of the power semiconductor element, a sensor signal terminal connected to the sensor section, a drive terminal that supplies power to drive the power semiconductor element and a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal, and the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.Type: ApplicationFiled: April 8, 2016Publication date: March 2, 2017Applicant: Mitsubishi Electric CorporationInventors: Rei YONEYAMA, Fumitaka TAMETANI, Manabu MATSUMOTO, Haruhiko TAKEMOTO, Hiroshi YOSHIDA, Motonobu JOKO
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Publication number: 20150116885Abstract: A fuse, a resistor, and a transistor, which serve as an abnormality history setting unit, are provided in series between external terminals. The transistor receives a specific abnormality detection signal on its base from an abnormality detection circuit. The specific abnormality detection signal becomes “H” level in order to bring the transistor into an on state when a specific abnormal phenomenon to be detected occurs out of plural types of abnormal phenomena. The abnormality history setting unit executes an abnormality history operation for turning on the transistor and allowing a current exceeding a disconnection level to flow through the fuse provided between the external terminals to disconnect the fuse.Type: ApplicationFiled: June 3, 2014Publication date: April 30, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventor: Motonobu JOKO