Patents by Inventor MOTONOBU TAKETANI

MOTONOBU TAKETANI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8587004
    Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: November 19, 2013
    Assignee: Sony Corporation
    Inventors: Osamu Goto, Takeharu Asano, Yasuhiko Suzuki, Motonobu Taketani, Katsuyoshi Shibuya, Takashi Mizuno, Tsuyoshi Tojo, Shiro Uchida, Masao Ikeda
  • Publication number: 20130230936
    Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
    Type: Application
    Filed: April 5, 2013
    Publication date: September 5, 2013
    Applicant: Sony Corporation
    Inventors: OSAMU GOTO, TAKEHARU ASANO, YASUHIKO SUZUKI, MOTONOBU TAKETANI, KATSUYOSHI SHIBUYA, TAKASHI MIZUNO, TSUYOSHI TOJO, SHIRO UCHIDA, MASAO IKEDA