Abstract: The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 ?m square in size, and includes a distributed index lens (1), a color filter (for example, for green) (2), an Al interconnections (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving device (Si photodiodes) (6), and an Si substrate (7). The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 ?m (“grey color”), the film thickness 0.8 ?m (“dots pattern”) and the film thickness of 0 ?m (“without pattern: white color”), and the medium surrounding the distributed index lens (1)is air (n=1).

Abstract: A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.

Abstract: A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements.

Abstract: A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.

Abstract: The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.

Abstract: An FBAR filter added with a balance-unbalance conversion function is provided. The FBAR filter includes: an FBAR filter device having two unbalanced terminals, and which performs filtering of a signal between such terminals; and a balance-unbalance converter having one unbalanced terminal and one pair of balanced terminals, and which performs balance-unbalance conversion of the signal. The unbalanced terminal and the unbalanced terminal are connected, and filtering and balance-unbalance conversion of the signal is performed between the unbalanced terminal and the balanced terminals. The characteristics of the FBAR filter device are brought forth in the filtering of the signal.

Abstract: The present invention provides a method of manufacturing a lens, in which the method includes exposing a photoresist to light using a phase shift mask. Here, the phase shift mask includes layout portions respectively corresponding to pixels and lens, in which each of the layout portions has: a light-blocking portion which has a shape of a substantially circle or a substantially concentric zone; a light-transmitting portion which has a shape of a substantially circle or a substantially concentric zone; a phase shift portion which has a shape of a substantially circle or a substantially concentric zone; and a light-blocking frame. Furthermore, the light-transmitting portion, the light-blocking portion and the phase shift portion are arranged alternately so as to form concentric circles, and the light-blocking frame corresponds to a whole or a part of a perimeter of the lens.

Abstract: The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 ?m square in size, and includes a distributed index lens 1, a color filter (for example, for green) 2, an Al interconnections 3, a signal transmitting unit 4, a planarized layer 5, a light-receiving device (Si photodiodes) 6, and an Si substrate 7. The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 ?m (“grey color”), the film thickness 0.8 ?m (“dots pattern”) and the film thickness of 0 ?m (“without pattern: white color”), and the medium surrounding the distributed index lens 1 is air (n=1).

Abstract: A piezoelectric resonator includes a substrate, an acoustic mirror formed on the substrate and includes alternately stacked first acoustic mirror material layers and second acoustic mirror material layers having higher acoustic impedance than that of the first acoustic mirror material layers, a piezoelectric film formed on the acoustic mirror, a top electrode formed on the piezoelectric film and a bottom electrode formed below the piezoelectric film. A bonding interface is provided between metal films bonded to each other between the substrate and the piezoelectric film.

Abstract: An RF filter includes: one or more first piezoelectric resonators each of which is held on a principal surface of a substrate and is constituted by a first piezoelectric film and opposed first upper and lower electrodes provided on the upper and lower faces of the first piezoelectric film, respectively; and one or more second piezoelectric resonators each of which is held on the principal surface of the substrate, is constituted by a second piezoelectric film and opposed second upper and lower electrodes provided on the upper and lower faces of the second piezoelectric film, respectively, and has a resonance frequency different from that of each of the first piezoelectric resonators. At least one of the first upper and lower electrodes is made of a first electrode material and at least one of the second upper and lower electrodes is made of a second electrode material.

Abstract: A piezoelectric resonator includes a resonator film held along the principal surface of a substrate and constituted by a piezoelectric film, a lower electrode and an upper electrode. The lower electrode and the upper electrode are opposed to each other and provided on the lower face and the upper face of the piezoelectric film, respectively. A frame is provided at a peripheral portion of the upper face of the upper electrode. The lower face of a lid is supported by the frame. An upper cavity is formed between the lid and the upper face of the upper electrode.

Abstract: To provide a semiconductor instrument for improving power added efficiency when a low power is outputted. In the semiconductor instrument in which a radio-frequency input signal (SRF) is supplied to input circuits of a plurality of transistors (1, 2), output circuits of the plurality of transistors (1, 2) are connected in parallel, and a radio-frequency output signal amplified with power is retrieved an amplifying operation of one part transistor (2) of the plurality of the transistors (1, 2) is turned off during a low-output operation.

Abstract: To provide a semiconductor instrument for improving power added efficiency when a low power is outputted. In the semiconductor instrument in which a radio-frequency input signal (SRF) is supplied to input circuits of a plurality of transistors (1, 2), output circuits of the plurality of transistors (1, 2) are connected in parallel, and a radio-frequency output signal amplified with power is retrieved an amplifying operation of one part transistor (2) of the plurality of the transistors (1, 2) is turned off during a low-output operation.