Abstract: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively.

Abstract: In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.

Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.

Abstract: Disclosed is a method for measuring the concentration of a peroxide using a CNT sensor. The CNT sensor comprises a working electrode that is arranged on an insulating substrate, a monolayered carbon nano-tube that is contacted with the working electrode, a counter electrode, and a reference electrode. A sample is provided on the monolayered carbon nano-tube, and a potential difference is made between the working electrode and the counter electrode. In this manner, the concentration of the peroxide in the sample can be measured. The measurement method can be applied to clinical tests or the like.

Abstract: A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.

Abstract: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively.

Abstract: The invention offers a magnesium alloy sheet having excellent warm plastic formability, a production method thereof, and a formed body produced by performing warm plastic forming on this sheet. The magnesium alloy sheet is produced by giving a predetermined strain to a rolled sheet RS that is not subjected to a heat treatment aiming at recrystallization. The sheet is not subjected to the foregoing heat treatment even after the giving of a strain. The strain is given through the process described below. A rolled sheet RS is heated in a heating furnace 10. The heated rolled sheet RS is passed between rollers 21 to give bending to the rolled sheet RS. The giving of a strain is performed such that the strain-given sheet has a half peak width of 0.20 deg or more and 0.59 deg or less in a (0004) diffraction peak in monochromatic X-ray diffraction. The alloy sheet exhibits high plastic deformability by forming continuous recrystallization during warm plastic forming through the use of the remaining strain.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.

Abstract: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited.

Abstract: A plurality of partial control zones (an LL zone, an LR zone, and an R zone) that can control a gas flow rate independently in a widthwise direction of a gas flow are configured on an upstream side of the gas inlet port 20B. A control device 66 is disposed to control a gas flow rate for respective partial control zones.

Abstract: The invention offers a magnesium alloy sheet having excellent warm plastic formability, a production method thereof, and a formed body produced by performing warm plastic forming on this sheet. The magnesium alloy sheet is produced by giving a predetermined strain to a rolled sheet RS that is not subjected to a heat treatment aiming at recrystallization. The sheet is not subjected to the foregoing heat treatment even after the giving of a strain. The strain is given through the process described below. A rolled sheet RS is heated in a heating furnace 10. The heated rolled sheet RS is passed between rollers 21 to give bending to the rolled sheet RS. The giving of a strain is performed such that the strain-given sheet has a half peak width of 0.20 deg or more and 0.59 deg or less in a (0004) diffraction peak in monochromatic X-ray diffraction. The alloy sheet exhibits high plastic deformability by forming continuous recrystallization during warm plastic forming through the use of the remaining strain.

Abstract: An object of the present invention is to provide a method for manufacturing a glass particle deposited body in which a taper portion formed at an end portion of the glass particle deposited body is reduced without increasing the number of burners.

Abstract: A method of producing a glass-particle-deposited body that has a small diameter variation and the like resulting from alteration of the deposition condition is offered. When the glass-particle-deposited body is produced, a burner row constituted by placing a plurality of burners is moved relative to a starting member, and glass particles ejected from the burners are deposited on the starting member. In the method of producing a glass-particle-deposited body, alteration of the deposition condition is performed during the course of the deposition of the glass particles on the starting member. The method of producing a glass-particle-deposited body has a feature in that the alteration of the deposition condition is performed at least twice and that the burner positions along the length of the starting member at which the deposition condition is altered are placed at intervals shorter than the intervals between burners.

Abstract: In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.

Abstract: A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion.

Abstract: A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.

Abstract: This device is a degradation judging device for an oxygen sensor having a reference electrode 23 and a measuring electrode 22, both of which hold a solid electrolyte layer therebetween, and measuring oxygen concentrations based on an electromotive force that occurs in accordance with a difference between an oxygen partial pressure of the reference electrode 23 and an oxygen partial pressure of the measuring electrode 22. A control unit 10, which controls operations of intake and exhaust valves, a spark plug and a fuel injection valve, has a degradation judging means that detects an internal resistance value “R1” of the solid electrolyte layer 21 by applying a high-frequency alternating current between the reference electrode 23 and the measuring electrode 22, and judges degradation of the solid electrolyte layer 21 by comparing an average value of the detected internal resistance value “R1” with a reference value.

Abstract: A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.

Abstract: A method of producing a glass-particle-deposited body that has a small diameter variation and the like resulting from alteration of the deposition condition is offered. When the glass-particle-deposited body is produced, a burner row constituted by placing a plurality of burners is moved relative to a starting member, and glass particles ejected from the burners are deposited on the starting member. In the method of producing a glass-particle-deposited body, alteration of the deposition condition is performed during the course of the deposition of the glass particles on the starting member. The method of producing a glass-particle-deposited body has a feature in that the alteration of the deposition condition is performed at least twice and that the burner positions along the length of the starting member at which the deposition condition is altered are placed at intervals shorter than the intervals between burners.