Patents by Inventor Motoo Seimiya

Motoo Seimiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for preparing high-purity molybdenum or tungsten powder and high-purity oxides powder of the same
    Patent number: 4762695
    Abstract: High-purity molybdenum or tungsten powder can be produced by a process comprising (a) decomposing a powder or an oxide powder of molybdenum or tungsten with hydrogen peroxide water; (b) bringing the resulting aqueous solution of molybdenum or tungsten into contact with a cation exchange resin; (c) concentrating the aqueous solution; and (d) reducing a concentrated solid material. By omitting reducing step (d), one can obtain high-purity molybdenum or tungsten oxide powders. Because the Mo and W powders and MoO.sub.3 and WO.sub.3 powders prepared by this invention are of an extremely high purity, they are useful as materials for targets of VLSI elements.
    Type: Grant
    Filed: September 4, 1987
    Date of Patent: August 9, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Endo, Shigeo Iiri, Masaru Hayashi, Tsutomu Yamashita, Satoshi Yamaguchi, Motoo Seimiya
  • Method of preparing silicon nitride
    Patent number: 4414190
    Abstract: A method of producing silicon nitride which comprises heating wet process white carbon in the presence of a carbon source and a source of nitrogen.
    Type: Grant
    Filed: March 15, 1982
    Date of Patent: November 8, 1983
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Motoo Seimiya, Katsutoshi Nishida
  • Method of preparing silicon carbide
    Patent number: 4377563
    Abstract: A method of producing silicon carbide which comprises heating wet process white carbon in the presence of a carbon source.
    Type: Grant
    Filed: March 15, 1982
    Date of Patent: March 22, 1983
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventor: Motoo Seimiya
  • Method of preparing silicon carbide
    Patent number: 4327066
    Abstract: A method of producing silicon carbide which comprises heating silica in a gas atmosphere comprising hydrocarbon gas and hydrogen gas.
    Type: Grant
    Filed: June 25, 1980
    Date of Patent: April 27, 1982
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventor: Motoo Seimiya
  • Method of preparing silicon nitride
    Patent number: 4280989
    Abstract: A method of producing silicon nitride which comprises heating silica in a gas atmosphere comprising hydrocarbon gas, ammonia gas and hydrogen gas.
    Type: Grant
    Filed: June 12, 1980
    Date of Patent: July 28, 1981
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Motoo Seimiya, Katsutoshi Nishida
  • Method for preparing tungsten materials
    Patent number: 4101309
    Abstract: A method for preparing tungsten materials in which tungsten powder obtained by reducing tungsten oxides having doping agents added thereto is washed first with hydrochloric acid having a concentration of not lower than 4% by weight and then with hydrofluoric acid having a concentration of not lower than 3% by weight, and thereafter dried. The above-mentioned washing steps may be carried out at a time by using a mixture of such hydrochloric acid and hydrofluoric acid as specified above. Articles formed by treating tungsten materials obtained by the above-mentioned process are subjected to only a low high temperature deformation.
    Type: Grant
    Filed: October 13, 1976
    Date of Patent: July 18, 1978
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Isamu Koseki, Motoo Seimiya