Abstract: A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Abstract: A substrate processing apparatus includes a shower head configured to disperse a gas; a process vessel installed at a downstream side of the shower head and configured to have a process space that allows a substrate to be processed by a process gas therein; a gas supplier connected to the shower head; a shower head gas exhauster connected to the shower head; and a capturing assembly configured to capture a component different from the process gas within the shower head.

Abstract: A substrate processing apparatus includes: a process container where a substrate is processed; a process gas supply unit configured to supply a process gas into the process container; a substrate placing table installed in the process container; a shaft penetrating a hole at a bottom portion of the process container and coupled to the substrate placing table; a bellows surrounding the shaft and disposed outside of the process container wherein an inner space thereof is in communication with a space of the process container; an inert gas supply system configured to supply an inert gas into the inner space of the bellows disposed outside of the process container; and a component falling prevention unit including at least a first structure disposed along a first portion of the hole at the bottom of the process container and a second structure disposed along a second portion of the hole adjacent to the first structure.

Abstract: A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Abstract: A substrate processing apparatus includes process chambers configured to process substrates, process modules each including juxtaposed process chambers configured to process substrates, heat medium flow paths respectively installed in the process modules, and temperature adjustment parts individually installed in a corresponding relationship with the process modules and configured to allow a heat medium to flow through the flow paths installed in the process modules. Each of the flow paths includes: upstream and downstream flow path portions positioned at an upstream side and a downstream side of each of the process modules, a penetration flow path portion connected to the upstream flow path portion and configured to extend between the juxtaposed process chambers of each of the process modules, and an outer periphery flow path portion connected to the downstream flow path portion and configured to extend along an outer periphery of each of the process modules.

Abstract: A substrate processing apparatus includes: a process container where a substrate is processed; a process gas supply unit configured to supply a process gas into the process container; a substrate placing table installed in the process container; a shaft penetrating a hole at a bottom portion of the process container and coupled to the substrate placing table; a bellows surrounding the shaft and disposed outside of the process container wherein an inner space thereof is in communication with a space of the process container; an inert gas supply system configured to supply an inert gas into the inner space of the bellows disposed outside of the process container; and a component falling prevention unit including at least a first structure disposed along a first portion of the hole at the bottom of the process container and a second structure disposed along a second portion of the hole adjacent to the first structure.

Abstract: A substrate processing apparatus includes a shower head configured to disperse a gas; a process vessel installed at a downstream side of the shower head and configured to have a process space that allows a substrate to be processed by a process gas therein; a gas supplier connected to the shower head; a shower head gas exhauster connected to the shower head; and a capturing assembly configured to capture a component different from the process gas within the shower head.

Abstract: In order to detect microwaves from radar type speed measurement devices and microwaves leaking out of reverse detectors without being detected by such reverse detectors, a microwave detector is provided with a super-heterodyne type reception circuit for cyclically performing reception operations to receive target microwave frequencies of prescribed microwave bands, the reception circuit including a first local oscillator which can carry out a fixed oscillation at a prescribed frequency or a sweep of a prescribed frequency range established slightly outside the frequency range of the local oscillator of a reverse detector, and a plurality of second local oscillators having different oscillation frequencies, whereby the reception circuit is able to receive microwaves in the target bands and microwaves leaking out of the local oscillator of a reverse detector.

Abstract: A microwave detector includes a horn antenna and cavity formed by covering a metallic film of a printed substrate with an opened bottom microwave circuit component, and further includes a mixer diode which is positioned at the feeding point of the horn antenna and sandwiched between the microwave circuit component and the printed substrate, the mixer diode including a mixer diode substrate having a first protruding portion at a first end of the mixer diode substrate and a second protruding portion at a second end of the mixer diode substrate, separate anode and cathode electrode patterns formed on a surface of the substrate which includes the protruding portions, and a beam-lead-type or flip-chip-type diode which is mounted to a surface of the mixer diode substrate near the center thereof, the beam-lead-type or flip-chip-type diode having an anode and a cathode which are surface mounted to the anode and cathode electrode patterns to form electrically conducting pathways therewith, wherein the first and second