Abstract: A thin film transistor includes at least a gate electrode, a gate insulating film, an oxide semiconductor layer, source/drain electrodes, and at least one layer of a passivation film on a substrate. Metal elements constituting the oxide semiconductor layer include In, Ga, Zn, and Sn. Respective ratios of the metal elements to a total (In+Ga+Zn+Sn) of the metal elements in the oxide semiconductor layer satisfy: In: 30 atom % or more and 45 atom % or less, Ga: 5 atom % or more and less than 20 atom %, Zn: 30 atom % or more and 60 atom % or less, and Sn: 4.0 atom % or more and less than 9.0 atom %.

Abstract: A thin film transistor includes at least a gate electrode, a gate insulating film, an oxide semiconductor layer, source/drain electrodes, and at least one layer of a passivation film on a substrate. Metal elements constituting the oxide semiconductor layer include In, Ga, Zn, and Sn. Respective ratios of the metal elements to a total (In+Ga+Zn+Sn) of the metal elements in the oxide semiconductor layer satisfy: In: 30 atom % or more and 45 atom % or less, Ga: 5 atom % or more and less than 20 atom %, Zn: 30 atom % or more and 60 atom % or less, and Sn: 4.0 atom % or more and less than 9.0 atom %.

Abstract: An object of the present invention is to provide: an oxide semiconductor thin film which is produced at relatively low cost and has a high carrier mobility and a high resistance to light stress when used for forming a thin film transistor; and a thin film transistor formed using the oxide semiconductor thin film. The oxide semiconductor thin film contains In, Zn, and Fe, wherein, with respect to a total number of In atoms, Zn atoms, and Fe atoms, a number of In atoms accounts for greater than or equal to 20 atm % and less than or equal to 89 atm %, a number of Zn atoms accounts for greater than or equal to 10 atm % and less than or equal to 79 atm %, and a number of Fe atoms accounts for greater than or equal to 0.2 atm % and less than or equal to 2 atm %. The present invention involves a thin film transistor including the oxide semiconductor thin film.

Abstract: An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 ?m or less. In the oxide sintered body, the relations 30 atomic %?[In]?50 atomic %, 20 atomic %?[Ga]?30 atomic % and 25 atomic %?[Sn]?45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]?0.05.

Abstract: A quality evaluation method for an oxide semiconductor thin film includes: selecting a peak value having a largest calculated value and a time constant for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density in the oxide semiconductor thin film: x=(signal value)×(elapsed time for the signal value)??Equation 1.

Abstract: A thin film transistor includes at least an oxide semiconductor layer, a gate insulating film, a gate electrode, a source-drain electrode, and a protective film in this order on a substrate and further includes a protective layer. The oxide semiconductor layer includes an oxide constituted of In, Ga, Zn, Sn, and O. The atomic ratio of each metal element in the oxide semiconductor layer satisfies the following relationships: 0.09?Sn/(In+Ga+Zn+Sn)?0.25, 0.15?In/(In+Ga+Zn+Sn)?0.40, 0.07?Ga/(In+Ga+Zn+Sn)?0.20, and 0.35?Zn/(In+Ga+Zn+Sn)?0.55. The protective layer contains SiNx. The thin film transistor has a mobility of 15 cm2/Vs or more.

Abstract: A quality evaluation method for an oxide semiconductor thin film includes: selecting a peak value having a largest calculated value and a time constant for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density in the oxide semiconductor thin film: x=(signal value)×(elapsed time for the signal value)??Equation 1.

Abstract: Disclosed herein is a thin film transistor including at least an oxide semiconductor layer, a gate insulting film, a gate electrode, a source-drain electrode and a protective film in this order on a substrate and further including a protective layer. The oxide semiconductor layer includes an oxide constituted of In, Ga, Sn and O and an atomic ratio of each metal element satisfies the following relationships: 0.30?In/(In+Ga+Sn)?0.50, 0.19?Ga/(In+Ga+Sn)?0.30 and 0.24?Sn/(In+Ga+Sn)?0.45. The protective layer contains SiNx, and mobility is 35 cm2/Vs or more.

Abstract: Disclosed is an antistatic film having a light-transmissive property provided on a light-transmissive member, comprising In, Zn, Sn and O.

Abstract: An oxide semiconductor layer in a thin-film transistor includes In, Ga, Zn and Sn. The respective ratios of the metal elements to a total (In+Ga+Zn+Sn) of all the metal elements in the oxide semiconductor layer are: In: 20 to 45 atom %, Ga: 5 to 20 atom %, Zn: 30 to 60 atom %, and Sn: 9 to 25 atom %.

Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.

Abstract: Provided is a method for reliably and simply evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film. Also provided is a method for reliably and simply managing the quality of an oxide semiconductor thin film.

Abstract: Provided is a method for reliably and simply evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film. Also provided is a method for reliably and simply managing the quality of an oxide semiconductor thin film.

Abstract: This thin film transistor has a gate electrode, a gate insulating film, an oxide semiconductor thin film, an etch stop layer for protecting the oxide semiconductor thin film, a source and drain electrodes, and a passivation film in this order on a substrate. The oxide semiconductor thin film is formed of an oxide configured from In, Ga and Sn as metal elements, and O, and has an amorphous structure, and the etch stop layer and/or the passivation film includes SiNx. The thin film transistor has an extremely high mobility of approximately 40 cm2/Vs or more.

Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.

Abstract: Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.