Abstract: Disclosed herewith is a method for enabling fast and high density recording of information. A voltage is applied to a recording layer formed between a pair of electrodes. The distance between the pair of electrodes is set wider at one of land and groove areas of a subject optical disk and narrower at the other or the distance is set so that light absorption occurs only in either of the land and groove areas. The optical disk is also provided with a layer of which light absorption spectrum changes according to the application of an electric current, thereby absorbing the light. The new layer may be the recording layer itself or a layer adjacent to the recording layer. Because a heat generates only from a small area of the optical disk at the time of recording, the disk can be turned rapidly and permissively to the auto focusing and tracking offsets, thereby enabling fast and high density recording. The disk can thus be formed with easily selectable multiple layers.

Abstract: A method for recording information is disclosed in which an information recording medium is irradiated with a recording energy beam power-modulated into at least a record power level and a record-ready power level lower than the record power level. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion. Also, only in the case where the energy beam is modulated by the power lower in power level than the record-ready power level after the last pulse of the energy beam pulse train including at least one pulse for forming a mark portion and the mark portion is followed by a space portion of a predetermined length, the particular radiation energy of low power level is reduced as compared with when the mark portion is followed by a space potion of a different length.

Abstract: The present invention relates to an information recording medium for recording and reproducing information using light and an information recording method to attain high-speed recording and high-density recording. An electrolyte layer 2 is sandwiched by the first conductive polymer layer (an electrochromic layer) 1 comprising a conductive polymer electrochromic material and the second electrolyte layer 7, and both sides of the first and the second conductive polymer layers are sandwiched by electrode layers 3 and 4. The heat generation area in recording is so narrow that some drift in auto-focusing and tracking is allowable, which enables high-speed rotation leading to high-speed recording and high-density recording.

Abstract: An information recording apparatus includes a multilayer information recording medium having a first layer containing an electro-chromic material, an electrode layer applying a voltage to the first layer to color the first layer, a second layer containing an electro-chromic material, a unit for applying the voltage to the first layer, a first optical irradiating unit for irradiating a first optical spot onto the first layer, and a second optical irradiating unit for irradiating a second optical spot onto the second layer after irradiating the first optical spot onto the first layer.

Abstract: In an information recording medium, a first protective layer, a recording film, a second protective layer and a reflective layer are provided on a substrate sequentially from a side where light is irradiated, the first protective layer having a film thickness of 2 nm to 25 nm. 95 atomic % or more of a material of the first protective layer is SiO2—In2O3—SnO2—ZnS, and a ZnS amount in the first protective layer is in the range of 4 mol % to 33 mol %.

Abstract: The object of the present invention is to provide an optically functional element having a large change in refractive index with temperature change and a fast change rate in refractive index, a production method for the same and optical switch, temperature sensor and optical information recording medium using the same. The present invention provides a thin film formed directly on a substrate or via other layers, and the film is composed of particles with an average diameter of not larger than 13 nm, observed at film surface. The present invention also provides an optically functional element having an amount of change in refractive index of not less than 2.0×10?4/° C. The present invention further provides a production method for said thin film by sputtering under reduced pressure in an inert gas atmosphere containing 3-15% by volume of oxygen, and optical switch, temperature sensor and optical information recording medium using said element.

Abstract: An optical reproducing method using an optical medium having an aligned prepit portion straddled on a plurality of tracks in a radius direction. The prepit portion includes a first and second prepit portion divided in a track direction with a gap therebetween and with a synchronous information prepit of the respective first and second prepit portion being arranged on a boundary of the respective tracks. The synchronous information prepit and the first and second prepit portion is arranged at every two-track pitch in the radius direction and at opposite boundaries of the same track. An optical spot is irradiated on the optical medium, a reflected beam is detected from the optical medium, and information on the optical medium is reproduced by using a signal obtained by the reflected beam.

Abstract: An information recording method and information recording apparatus is capable of resolving the trade-off relation between recording density and transmittance, wherein either the reproduction (playback) signal quality or the recording sensitivity is lowered. For this purpose, a voltage is applied by way of ball bearings or slip rings to a specified layer of a medium having multiple layers. The light transmittance of the recording layer is changed by application of this voltage. The tradeoff relationship between recording density and transmittance is eliminated thereby, and the recording density and transmittance levels are both improved, so as to enhance the recording reliability.

Abstract: A method for recording information is disclosed in which an information recording medium is irradiated with a recording energy beam power-modulated into at least a record power level and a record-ready power level lower than the record power level. When forming a mark portion of a predetermined length, the radiation energy of the energy beam is increased as compared with when forming a mark portion of a different length before or after the first pulse of an energy beam pulse train including at least a pulse for forming the mark portion. Also, only in the case where the energy beam is modulated by the power lower in power level than the record-ready power level after the last pulse of the energy beam pulse train including at least one pulse for forming a mark portion and the mark portion is followed by a space portion of a predetermined length, the particular radiation energy of low power level is reduced as compared with when the mark portion is followed by a space potion of a different length.

Abstract: The image display device has a display section formed of plural pixels and a control section which controls the display section, and is provided with nonvolatile phase-change type pixel memories in respective ones of the pixels, or is provided with a nonvolatile phase-change type frame memory in the control section. Each of the nonvolatile phase-change type pixel memories is formed of one or more switches and a variable-resistance memory element fabricated from a chalcogenide material for storing display data for at least a specified period of time. The nonvolatile phase-change type frame memory is formed of one or more switches and a variable-resistance memory element fabricated from a chalcogenide material for retaining display data for one frame.

Abstract: An optical reproducing method using an optical recording medium having an aligned prepit portion straddled on a plurality of tracks in a radial direction which includes a first and a second prepit portion divided in a track direction. The respective first and second prepit portion are arranged on a boundary of respective tracks and include a synchronous information prepit arranged at every two-track pitch in the radial direction and positioned at opposite boundaries of the same track. A trailing end of the first prepit portion is aligned with the radial direction in arrangement. the method includes irradiating an optical spot on the optical recording medium, detecting a reflected beam from the optical recording medium, and reproducing information on the optical recording medium by using a signal obtained in accordance with the reflected beam.

Abstract: A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration, a recording layer of which, of Zn—Ge—Te, content of Zn, Cd or the like is 20 atom percent or more, content of at least one element selected from the group consisting of Ge and Sb is less than 40 atom percent, and content of Te is 40 atom percent or more is used. It is thereby possible to implement the memory device usable for an application which may be performed at a high temperature such as an in-vehicle use.

Abstract: A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. A memory cell with a smaller surface area than the DRAM device of the related art is achieved by the present invention. Besides low power consumption during read operation, the invention also provides phase change memory having low power consumption even during write operation. Phase change memory also has stable read-out operation.

Abstract: The information recording medium accosting to the preferred embodiment of the present invention achieves high-speed, high-density recording. The layer, in which ultra-particles made from an optical absorption metal, dielectric, or recording material are formed into regular arrays, is deposited. Resonant Plasmon excitation and resonance absorption of ultra-particles enable the edges of the recorded marks to be identified clearly and intense absorption to occur only in the given layer depending on the wavelength in the case of the multi-layer medium achieving high-density, large-capacity recording.

Abstract: In an optical disk for high density recording, for preventing the deformation of recording tracks caused by stress which may develop between the substrate and the recording stacked film formed thereon, a stress-compensation layer having a metal element such as Ti or Cr as a main component is provided. The stress-compensation layer undergoes contraction (tensile stress) to compensate for compression stress which develops in the stacked film during cooling after the thermal expansion of the substrate surface that occurs at the end of film formation. The stress-compensation layer has a pillar-like structure which, starting from the lower face, reaches the upper face of the film.

Abstract: The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected word line conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.

Abstract: A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. A memory cell with a smaller surface area than the DRAM device of the related art is achieved by the present invention. Besides low power consumption during read operation, the invention also provides phase change memory having low power consumption even during write operation. Phase change memory also has stable read-out operation.

Abstract: The object of the present invention is to provide an optically functional element having a large change in refractive index with temperature change and a fast change rate in refractive index, a production method for the same and optical switch, temperature sensor and optical information recording medium using the same. The present invention provides a thin film formed directly on a substrate or via other layers, and the film is composed of particles with an average diameter of not larger than 13 nm, observed at film surface. The present invention also provides an optically functional element having an amount of change in refractive index of not less than 2.0×10−4/° C. The present invention further provides a production method for said thin film by sputtering under reduced pressure in an inert gas atmosphere containing 3-15% by volume of oxygen, and optical switch, temperature sensor and optical information recording medium using said element.

Abstract: A glass including SiO2, Na2O, MgO, Al2O3, and cobalt oxide, wherein the cobalt oxide is 4.5-85 wt % as an oxide of CoO or 4.9-91 wt % as an oxide of Co3O4.

Abstract: A glass including SiO2, Na2O, MgO, Al2O3, and cobalt oxide, wherein the cobalt oxide is 4.5-85 wt % as an oxide of CoO or 4.9-91 wt % as an oxide of Co3O4.