Patents by Inventor Mougahed Y. Darwish

Mougahed Y. Darwish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit structure having regions of doping concentration intermediate that of a substrate and a pocket formed therein
    Patent number: 4205342
    Abstract: A CMOS integrated circuit structure is provided having circuit elements which can function as high resistances or stable current sources. The circuit elements include a region of intermediate doping which has a surface concentration between that of a substrate and a homogeneous region of a doped pocket formed therein. The region of intermediate doping is formed by the vicinity of two pocket edges, these edges being separated by a distance which is substantially not greater than twice the length of the lateral diffusion of the doping of the pockets.
    Type: Grant
    Filed: April 21, 1978
    Date of Patent: May 27, 1980
    Assignee: CentreElectronique Horologer S.A.
    Inventors: Mougahed Y. Darwish, Henri J. Oguey