Patents by Inventor Moung-kwan PARK

Moung-kwan PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Amorphous and nano nitride composite thin film, method for forming the same, and electronic device having the same
    Patent number: 10087514
    Abstract: An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: October 2, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-soo Park, Keum-hwan Park, Jin-man Park, Seok-moo Hong, Sung-ho Cho, Moung-kwan Park, Jae-won Sim
  • AMORPHOUS AND NANO NITRIDE COMPOSITE THIN FILM, METHOD FOR FORMING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME
    Publication number: 20160215383
    Abstract: An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.
    Type: Application
    Filed: January 27, 2016
    Publication date: July 28, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-soo PARK, Keum-hwan PARK, Jin-man PARK, Seok-moo HONG, Sung-ho CHO, Moung-kwan PARK, Jae-won SIM