Patents by Inventor Moungi G. Bawendi

Moungi G. Bawendi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum dot white and colored light-emitting devices
    Patent number: 8362684
    Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: January 29, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
  • SEMICONDUCTOR NANOCRYSTALS HETEROSTRUCTURES
    Publication number: 20120319054
    Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
    Type: Application
    Filed: August 24, 2012
    Publication date: December 20, 2012
    Applicant: Massachusetts Institute of Technology
    Inventors: Sungjee Kim, Moungi G. Bawendi
  • LIGHT EMITTING DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS
    Publication number: 20120292595
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: November 22, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Fluorescent sensor based on two fluorescent moieties, one of which is a semiconductor nanocrystal, and methods of using and making
    Patent number: 8313957
    Abstract: Binding an analyte can cause a change in fluorescence emission of a sensor. The change in fluorescence can be related to the amount of analyte present. The sensor can include a semiconductor nanocrystal linked to a fluorescent moiety. Upon excitation, the fluorescent moiety can transfer energy to the semiconductor nanocrystal, or vice versa.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: November 20, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Preston T. Snee, Rebecca C. Somers, Daniel G. Nocera, Moungi G. Bawendi
  • QUANTUM DOT WHITE AND COLORED LIGHT-EMITTING DEVICES
    Publication number: 20120280611
    Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
    Type: Application
    Filed: May 7, 2012
    Publication date: November 8, 2012
    Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
  • Semiconductor nanocrystal heterostructures
    Patent number: 8277942
    Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
    Type: Grant
    Filed: September 22, 2010
    Date of Patent: October 2, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Sungjee Kim, Moungi G. Bawendi
  • LIGHT EMITTING DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS
    Publication number: 20120238047
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • Nanocrystals Including III-V Semiconductors
    Publication number: 20120193606
    Abstract: Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.
    Type: Application
    Filed: March 12, 2012
    Publication date: August 2, 2012
    Applicant: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Sang-wook Kim, John P. Zimmer
  • Light emitting devices including semiconductor nanocrystals
    Patent number: 8232722
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: July 31, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • DEVICE AND METHOD FOR LUMINESCENCE ENHANCEMENT BY RESONANT ENERGY TRANSFER FROM AN ABSORPTIVE THIN FILM
    Publication number: 20120188633
    Abstract: Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.
    Type: Application
    Filed: January 26, 2012
    Publication date: July 26, 2012
    Inventors: Gleb M. Akselrod, Moungi G. Bawendi, Vladimir Bulovic, Jonathan R. Tischler, William A. Tisdale, Brian J. Walker
  • Tellurium-containing nanocrystalline materials
    Publication number: 20120168694
    Abstract: Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.
    Type: Application
    Filed: March 21, 2007
    Publication date: July 5, 2012
    Inventors: Moungi G. Bawendi, Frederic V. Mikulec, Sungjee Kim
  • Color Selective Photodetector and Methods of Making
    Publication number: 20120138901
    Abstract: A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.
    Type: Application
    Filed: December 3, 2010
    Publication date: June 7, 2012
    Applicant: Massachusetts Institute of Technology
    Inventors: Brian J. Walker, August Dorn, Vladimir Bulovic, Moungi G. Bawendi
  • Inorganic particle conjugates
    Patent number: 8192646
    Abstract: The ionic conjugates include an inorganic particle electrostatically associated with a macromolecule which can interact specifically with predetermined chemical species or biological targets.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: June 5, 2012
    Assignees: Massachusetts Institute of Technology, The United States of America as represented by the Secretary of the Navy
    Inventors: George P. Anderson, Hedi Mattoussi, J. Matthew Mauro, Moungi G. Bawendi, Vikram C. Sundar
  • Quantum dot white and colored light-emitting devices
    Patent number: 8174181
    Abstract: A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
    Type: Grant
    Filed: August 11, 2011
    Date of Patent: May 8, 2012
    Assignees: Massachusetts Institute of Technology, Philips Lumileds Lighting Company LLC
    Inventors: Moungi G. Bawendi, Jason Heine, Klavs F. Jensen, Jeffrey N. Miller, Ronald L. Moon
  • Fluorescent Sensor and Methods
    Publication number: 20120094390
    Abstract: Binding an analyte can cause a change in fluorescence emission of a sensor. The change in fluorescence can be related to the amount of analyte present. The sensor can include a semiconductor nanocrystal linked to a fluorescent moiety. Upon excitation, the fluorescent moiety can transfer energy to the semiconductor nanocrystal, or vice versa.
    Type: Application
    Filed: December 19, 2011
    Publication date: April 19, 2012
    Inventors: Preston T. Snee, Rebecca C. Somers, Daniel G. Nocera, Moungi G. Bawendi
  • Blue Light Emitting Semiconductor Nanocrystal Materials
    Publication number: 20120061644
    Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.
    Type: Application
    Filed: November 16, 2011
    Publication date: March 15, 2012
    Inventors: Jonthan S. Steckel, John P. Zimmer, Seth Coe-Sullivan, Nathan E. Stott, Vladimir Bulovic, Moungi G. Bawendi
  • Nanocrystals including III-V semiconductors
    Patent number: 8134175
    Abstract: Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: March 13, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Sang-wook Kim, John P. Zimmer
  • HIGHLY LUMINESCENT SEMICONDUCTOR NANOCRYSTALS
    Publication number: 20120049119
    Abstract: A semiconductor nanocrystal can have a photoluminescent quantum yield of at least 90%, at least 95%, or at least 98%. The nanocrystal can be made by sequentially contacting a nanocrystal core with an M-containing compound and an X donor, where at least one of the M-containing compound and the X donor is substoichiometric with respect to forming a monolayer on the nanocrystal core.
    Type: Application
    Filed: August 24, 2010
    Publication date: March 1, 2012
    Applicant: Massachusetts Institute of Technology
    Inventors: Andrew B. Greytak, Wenhao Liu, Peter M. Allen, Moungi G. Bawendi, Daniel G. Nocera
  • Nanocrystal structures
    Patent number: 8121162
    Abstract: A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: February 21, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Hans J. Eisler, Vikram C. Sundar, Michael E. Walsh, Victor I. Klimov, Moungi G. Bawendi, Henry I. Smith
  • Flow method and reactor for manufacturing nanocrystals
    Patent number: 8101021
    Abstract: A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: January 24, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian Yen, Axel Guenther, Klavs F. Jensen, Moungi G. Bawendi, Martin Schmidt