Abstract: An optical diode structure includes a semiconductor substrate, a luminous layer, a first type semiconductor layer and a second type semiconductor. The luminous layer is disposed over the semiconductor substrate for emitting light. The first type semiconductor layer is formed between the semiconductor substrate and the luminous layer. The second type semiconductor layer has a first surface and a second surface. The first surface is in contact with the luminous layer. A rough-surfaced grating structure is formed in the second surface for modulating the light emitted by the luminous layer, thereby increasing light extraction efficiency of the luminance layer.

Abstract: A guided mode resonance solar cell includes a solar cell body and a guided mode resonance unit. The solar cell body is used for converting optical energy into electrical energy. The guided mode resonance unit is formed on the solar cell body, and includes a grating structure and a waveguide structure. The grating structure includes multiple sub-wavelength light pillars. When a light emitted from a light source is incident onto the grating structure, a resonant of the light occurs in the grating structure to facilitate trapping the light in the waveguide structure and elongating an optical path length.

Abstract: A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.

Abstract: A silicon bulk-micromachining technology is used to fabricate a GMR filter by exploiting the structure of a suspended silicon nitride (SiNx) membrane on the silicon substrate. A first silicon nitride (SiNx) thin film and a second silicon nitride (SiNx) thin film are formed on opposite sides of the silicon substrate. A first opening is defined in the first silicon nitride (SiNx) thin film, and a grating structure is defined in the second silicon nitride (SiNx) thin film. By etching off a portion of the silicon substrate exposed from the first opening until a portion of the second silicon nitride (SiNx) thin film is exposed from the first opening, a light path space is defined.