Patents by Inventor Mourad El-Gamal
Mourad El-Gamal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210123849Abstract: Airborne pollutants from natural and man-made sources are an increasing where their aerodynamic properties determine how far into the human respiratory system they penetrate. International and national guidelines or regulatory limits specify limits for particulate matter (PM) at different particulate dimensions leading to a requirement for low cost compact PM detectors/sensors. A flow of known and desired size particles are separated and guided by a virtual impactor towards a microelectromechanical systems (MEMS) sensor, e.g. MEMS resonator, yielding the required PM detectors/sensors. Further, in conjunction with the virtual impactor and MEMS sensor additional elements are provided to exploit thermophoresis or di-electrophoresis such that the particles within the sensing area of the MEMS sensor can be removed.Type: ApplicationFiled: October 28, 2020Publication date: April 29, 2021Inventors: NAVPREET SINGH, MOHANNAD ELSAYED, MOURAD EL-GAMAL
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Patent number: 10742191Abstract: Micromachined microelectromechanical systems (MEMS) based resonators offer integration with other MEMS devices and electronics. Whilst piezoelectric film bulk acoustic resonators (FBAR) generally exhibit high electromechanical transduction efficiencies and low signal transmission losses they also suffer from low quality factors and limited resonance frequencies. In contrast electrostatic FBARs can yield high quality factors and resonance frequencies but suffer from increased fabrication complexity. lower electromechanical transduction efficiency and significant signal transmission loss. Accordingly, it would be beneficial to overcome these limitations by reducing fabrication complexity via a single metal electrode layer topping the resonator structure and supporting relatively low complexity/low resolution commercial MEMS fabrication processes by removing the fabrication requirement for narrow transduction gaps.Type: GrantFiled: January 16, 2018Date of Patent: August 11, 2020Assignee: MEMS Vision International Inc.Inventors: Mohannad Elsayed, Mourad El-Gamal, Frederic Nabki, Paul-Vahe Cicek
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Patent number: 10197590Abstract: Considerations for selecting capacitive sensors include accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, integration options with other sensors and/or electronics, and cost effectiveness. It is beneficial if such sensors are amenable to above-IC integration with associated control/readout circuitry for reduced parasitics and reduced footprint through area sharing. The inventors have established a combined Lorentz force based magnetometer and accelerometer MEMS sensor exploiting a low temperature, above-IC-compatible fabrication process operating without requiring vacuum packaging.Type: GrantFiled: November 17, 2015Date of Patent: February 5, 2019Assignee: THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITYInventors: Mourad El-Gamal, Mohannad Elsayed, Paul-Vahe Cicek, Frederic Nabki
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Patent number: 10107773Abstract: Capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics are disclosed. A capacitive based sensor is disposed over a first predetermined portion of a wafer that includes at least a first ceramic element providing protection for the final capacitive based sensor and self-aligned processing during its manufacturing.Type: GrantFiled: October 29, 2013Date of Patent: October 23, 2018Assignee: MEMS-Vision International Inc.Inventors: Mourad El-Gamal, Paul-Vahe Cicek, Frederic Nabki
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Publication number: 20180219529Abstract: Micromachined microelectromechanical systems (MEMS) based resonators offer integration with other MEMS devices and electronics. Whilst piezoelectric film bulk acoustic resonators (FBAR) generally exhibit high electromechanical transduction efficiencies and low signal transmission losses they also suffer from low quality factors and limited resonance frequencies. In contrast electrostatic FBARs can yield high quality factors and resonance frequencies but suffer from increased fabrication complexity. lower electromechanical transduction efficiency and significant signal transmission loss. Accordingly, it would be beneficial to overcome these limitations by reducing fabrication complexity via a single metal electrode layer topping the resonator structure and supporting relatively low complexity/low resolution commercial MEMS fabrication processes by removing the fabrication requirement for narrow transduction gaps.Type: ApplicationFiled: January 16, 2018Publication date: August 2, 2018Inventors: MOHANNAD ELSAYED, MOURAD EL-GAMAL, FREDERIC NABKI, PAUL-VAHE CICEK
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Patent number: 9448069Abstract: Micromachined gyroscopes, such as those based upon microelectromechanical systems (MEMS) have the potential to dominate the rate-sensor market mainly due to their small size, low power and low cost. As MEMS gyroscopes are resonant devices requiring active excitation it would be beneficial to improve the resonator Q-factor reducing the electrical drive power requirements for the excitation circuitry. Further, many prior art MEMS gyroscope designs have multiple resonances arising from design and manufacturing considerations which require additional frequency tuning and control circuitry together with the excitation/sense circuitry. It would therefore be beneficial to enhance the bandwidth of the resonators to remove the requirement for such circuitry. Further, to address the relatively large dimensions of MEMS gyroscopes it would be beneficial for the MEMS gyroscopes to be fabricated directly above the CMOS electronics thereby reducing the die dimensions and lowering per die cost.Type: GrantFiled: October 1, 2013Date of Patent: September 20, 2016Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Mourad El-Gamal, Mohannad Elsayed, Paul-Vahe Cicek, Frederic Nabki
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Publication number: 20160139173Abstract: Considerations for selecting capacitive sensors include accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, integration options with other sensors and/or electronics, and cost effectiveness. It is beneficial if such sensors are amenable to above-IC integration with associated control/readout circuitry for reduced parasitics and reduced footprint through area sharing. The inventors have established a combined Lorentz force based magnetometer and accelerometer MEMS sensor exploiting a low temperature, above-IC-compatible fabrication process operating without requiring vacuum packaging.Type: ApplicationFiled: November 17, 2015Publication date: May 19, 2016Inventors: Mourad El-Gamal, Mohannad Elsayed, Paul-Vahe Cicek, Frederic Nabki
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Patent number: 9193583Abstract: It would be beneficial to integrate MEMS devices with silicon CMOS electronics, package them in controlled environments, e.g. vacuum for MEMS resonators, and provide industry standard electrical interconnections such as solder bumps. However, to do so requires through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and the stresses placed on metallization membranes are not present in conventional CMOS packaging. Accordingly there is provided a means of reinforcing through-wafer vias for integrated MEMS-CMOS circuits by in-filling the through-wafer electrical vias with low temperature deposited ceramic materials deposited with processes compatible with post-processing of CMOS electronics. Beneficially ceramics such as silicon carbide provide enhanced mechanical strength, enhanced expansion matching, and increased thermal conductivity in comparison to silicon and solder materials.Type: GrantFiled: October 26, 2012Date of Patent: November 24, 2015Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Mourad El-Gamal, Dominique Lemoine, Paul-Vahe Cicek, Frederic Nabki
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Patent number: 8975104Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.Type: GrantFiled: February 20, 2014Date of Patent: March 10, 2015Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Mourad El-Gamal, Frederic Nabki, Paul-Vahe Cicek
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Publication number: 20150008788Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.Type: ApplicationFiled: February 20, 2014Publication date: January 8, 2015Inventors: Mourad El-Gamal, Frederic Nabki, Paul-Vahe Cicek
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Publication number: 20140265720Abstract: Monolithically integrated capacitive micromachined transducers (CMTs) offer combined process steps, shared layers, simplified packaging, and reduced die size by overlapping the CMTs with the integrated circuit (IC) electronics. Moreover, a CMT array directly above the electronics also allows for varying the excitation signal phase to each CMT element thereby enabling beam-forming techniques. Above-IC integration is particularly attractive by not requiring any alteration of the semiconductor fabrication process and allowing subsequent implementation independent of IC fabrication. Naturally, this scheme requires that the CMT technology limit itself to IC compatible materials and chemicals, as well as process step temperatures within a specific thermal budget.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Applicant: The Royal Institution for the Advancement of Learning / McGill UniversityInventors: Mourad El-Gamal, Qing Zhang, Paul-Vahe Cicek, Frederic Nabki
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Publication number: 20140230547Abstract: Micromachined gyroscopes, such as those based upon microelectromechanical systems (MEMS) have the potential to dominate the rate-sensor market mainly due to their small size, low power and low cost. As MEMS gyroscopes are resonant devices requiring active excitation it would be beneficial to improve the resonator Q-factor reducing the electrical drive power requirements for the excitation circuitry. Further, many prior art MEMS gyroscope designs have multiple resonances arising from design and manufacturing considerations which require additional frequency tuning and control circuitry together with the excitation/sense circuitry. It would therefore be beneficial to enhance the bandwidth of the resonators to remove the requirement for such circuitry. Further, to address the relatively large dimensions of MEMS gyroscopes it would be beneficial for the MEMS gyroscopes to be fabricated directly above the CMOS electronics thereby reducing the die dimensions and lowering per die cost.Type: ApplicationFiled: October 1, 2013Publication date: August 21, 2014Applicant: The Royal Institution for the Advancement of Learning / McGill UniversityInventors: Mourad El-Gamal, Mohannad Elsayed, Paul-Vahe Cicek, Frederic Nabki
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Publication number: 20140125359Abstract: Capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics are disclosed. A capacitive based sensor is disposed over a first predetermined portion of a wafer that includes at least a first ceramic element providing protection for the final capacitive based sensor and self-aligned processing during its manufacturing.Type: ApplicationFiled: October 29, 2013Publication date: May 8, 2014Applicant: MEMS-Vision International Inc.Inventors: Mourad El-Gamal, Paul-Vahe Cicek, Frederic Nabki
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Patent number: 8697545Abstract: A method for manufacturing microelectromechanical structures (MEMS) is disclosed. A low temperature MEMS device is designed. The low temperature MEM device is based upon a semiconductor manufacturing process comprising at least one semiconductor process for providing at least a heater therein. Each semiconductor process used in implementing the design is limited to a maximum temperature of the in-process low temperature MEMs device or a substrate onto which the low temperature MEMS device is being manufactured to below 300° C.Type: GrantFiled: December 29, 2008Date of Patent: April 15, 2014Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Frederic Nabki, Mourad El-Gamal, Tomas A. Dusatko
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Patent number: 8658452Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.Type: GrantFiled: July 8, 2009Date of Patent: February 25, 2014Assignee: The Royal Institution for the Advancement of Learning / McGill UniversityInventors: Mourad El-Gamal, Frederic Nabki, Paul-Vahe Cicek
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Patent number: 8409901Abstract: Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C.Type: GrantFiled: March 11, 2009Date of Patent: April 2, 2013Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Mourad El-Gamal, Dominique Lemoine, Paul-Vahe Cicek, Frederic Nabki
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Patent number: 8071411Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method provides for processing and manufacturing is steps limiting a maximum exposure of an integrated circuit upon which the MEMS is manufactured during MEMS manufacturing to below a temperature wherein CMOS circuitry is adversely affected, for example below 400° C., and sometimes to below 300° C. or 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronic integrated circuits, such as Si CMOS circuits.Type: GrantFiled: December 22, 2008Date of Patent: December 6, 2011Assignee: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Frederic Nabki, Mourad El-Gamal, Tomas A. Dusatko, Srikar Vengallatore
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Publication number: 20110111545Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.Type: ApplicationFiled: July 8, 2009Publication date: May 12, 2011Applicant: The Royal Institution for the Advancement of Learning / McGill UniversityInventor: Mourad El-Gamal
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Publication number: 20110027930Abstract: Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C.Type: ApplicationFiled: March 11, 2009Publication date: February 3, 2011Applicant: The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Mourad El-Gamal, Dominique Lemoine, Paul-Vahe Cicek, Frederic Nabki
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Publication number: 20100279451Abstract: A method of providing thermal tuning of microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is disclosed. A heater is provided integrated with the MEMS for controllably heating the MEMS to control performance characteristics thereof.Type: ApplicationFiled: December 29, 2008Publication date: November 4, 2010Applicant: The Royal Institution for the Advancement of Learn ing/MoGill UniversityInventors: Frederic Nabki, Mourad El-Gamal, Tomas A. Dusatko