Abstract: The disclosed technology generally relates to photovoltaic devices and more particularly to back contact photovoltaic devices, and to methods of fabricating back contact photovoltaic devices. In one aspect, a back contact photovoltaic cell includes an n-type silicon substrate having formed on a rear side first layer stacks formed at first locations and second layer stacks formed at second locations different from and non-overlapping with the first locations. Each of the first layer stacks includes a passivating tunneling layer and a first transparent conductive layer having a first work function, where the first transparent conductive layer induces an inversion region in the n-type silicon substrate at a corresponding one of the first locations, where the inversion region forms an emitter region of the back contact photovoltaic cell.