Patents by Inventor Msahiro Hirano

Msahiro Hirano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser
    Patent number: 6806503
    Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: October 19, 2004
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
  • Light emitting diode and semiconductor laser
    Publication number: 20030132449
    Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
    Type: Application
    Filed: November 5, 2002
    Publication date: July 17, 2003
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano