Patents by Inventor Msao Tamura

Msao Tamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a semiconductor device including selective etching of a silicide layer
    Patent number: 4742025
    Abstract: A desired portion of a refractory metal silicide film is oxidized by anodic oxidation to form oxides of silicon and of metal. The oxides formed are completely removed by etching. By so doing, the desired portion of the silicide film can be etched selectively without badly damaging an underlying silicon substrate or silicon dioxide film. Therefore, it is possible to easily affect patterning of the silicide film used for electrodes of MOS transistors and bipolar transistors as well as resistors and interconnections.
    Type: Grant
    Filed: November 5, 1985
    Date of Patent: May 3, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Kiyonori Ohyu, Nobuyoshi Natsuaki, Msao Tamura, Yasuo Wada