Patents by Inventor MU-HAN YANG

MU-HAN YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955444
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.
    Type: Grant
    Filed: October 13, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Manikandan Arumugam, Tsung-Yi Yang, Chien-Chih Chen, Mu-Han Cheng, Kuo-Hsien Cheng
  • Patent number: 9499922
    Abstract: The present invention relates to a manufacturing method of a double cladding crystal fiber, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: November 22, 2016
    Assignee: National Taiwan University
    Inventors: Kuang-Yu Hsu, Mu-Han Yang, Dong-Yo Jheng, Sheng-Lung Huang
  • Publication number: 20160040316
    Abstract: The present invention relates to a manufacturing method of a double cladding crystal fiber, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Application
    Filed: October 22, 2015
    Publication date: February 11, 2016
    Inventors: KUANG-YU HSU, MU-HAN YANG, DONG-YO JHENG, SHENG-LUNG HUANG
  • Patent number: 9195002
    Abstract: The present invention relates to a double cladding crystal fiber and manufacturing method thereof, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: November 24, 2015
    Assignee: National Taiwan University
    Inventors: Kuang-Yu Hsu, Mu-Han Yang, Dong-Yo Jheng, Sheng-Lung Huang
  • Publication number: 20140079363
    Abstract: The present invention relates to a double cladding crystal fiber and manufacturing method thereof, in which growing an YAG or a sapphire into a single crystal fiber by LHPG method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the LHPG method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated.
    Type: Application
    Filed: March 25, 2013
    Publication date: March 20, 2014
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: KUANG-YU HSU, MU-HAN YANG, DONG-YO JHENG, SHENG-LUNG HUANG