Patents by Inventor Mu-Hsiang Huang

Mu-Hsiang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160189766
    Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.
    Type: Application
    Filed: November 24, 2015
    Publication date: June 30, 2016
    Inventors: Robert Haig, Patrick CHUANG, Chih TSENG, Mu-Hsiang HUANG
  • Publication number: 20160129977
    Abstract: A life-saving bracelet includes a ring body being able to be tightened to a user's arm, a casing connected to the ring body, an air bag folded inside the casing, an air cylinder disposed inside the casing, a control valve connected between the air bag and the air cylinder, and a protective cover pivotally disposed on the casing. When the protective cover pivotally rotates to an open position, the control button of the control valve exposes to the outside. After the control button is pressed, the control valve communicates the air bag and the air cylinder, and the air in the air cylinder immediately inflates the air bag. The air bag expands to break the casing and extends to outside. Thus, the life-saving bracelet is convenient to carry, easy to use, and not affecting the agility of the user when doing water activities.
    Type: Application
    Filed: July 16, 2015
    Publication date: May 12, 2016
    Inventors: MU-HSIANG HUANG, YU-HSIANG HUANG, CHING-WEI HUANG
  • Patent number: 9318174
    Abstract: Systems and methods of memory and memory operation are disclosed, such as providing a circuit including a local address driver voltage source for memory decoding. In one exemplary implementation, an illustrative circuit may comprise a first buffer and a capacitor. The first buffer may comprise a power input and a ground input. The capacitor may comprise a first terminal connected to the power input of the first buffer and a second terminal connected to the ground input of the first buffer. When the first buffer draws a current from the power input, at least a portion of the current may be supplied by the capacitor.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: April 19, 2016
    Assignee: GSI TECHNOLOGY, INC.
    Inventors: Patrick Chuang, Mu-Hsiang Huang, Lee-Lean Shu
  • Publication number: 20150357028
    Abstract: Multi-bank, dual-pipe SRAM systems, methods, processes of operating such SRAMs, and/or methods of fabricating multi-bank, dual-pipe SRAM are disclosed. For example, one illustrative multi-bank, dual-pipe SRAM may comprise features for capturing read and write addresses, splitting and/or combining them via one or more splitting/combining processes, and/or bussing them to the SRAM memory banks, where they may be read and written to a particular bank. Illustrative multi-bank, dual-pipe SRAMs and methods herein may also comprise features for capturing two beats of write data, splitting and/or combining them via one or more splitting/combining processes, and bussing them to each SRAM bank, where they may be split/combined/recombined via one or more processes to write data to particular memory bank(s).
    Type: Application
    Filed: June 5, 2015
    Publication date: December 10, 2015
    Inventors: Mu-Hsiang HUANG, Robert HAIG, Patrick CHUANG, Lee-Lean SHU
  • Patent number: 9196324
    Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: November 24, 2015
    Assignee: GSI Technology, Inc.
    Inventors: Robert Haig, Patrick Chuang, Chih Tseng, Mu-Hsiang Huang
  • Patent number: 8982649
    Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: March 17, 2015
    Assignee: GSI Technology, Inc.
    Inventors: Robert Haig, Patrick Chuang, Chih Tseng, Mu-Hsiang Huang
  • Publication number: 20140304463
    Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.
    Type: Application
    Filed: January 31, 2014
    Publication date: October 9, 2014
    Applicant: GSI Technology, Inc.
    Inventors: Robert HAIG, Patrick CHUANG, Chih TSENG, Mu-Hsiang HUANG
  • Publication number: 20130039131
    Abstract: Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.
    Type: Application
    Filed: December 15, 2011
    Publication date: February 14, 2013
    Inventors: Robert Haig, Patrick Chuang, Chih Tseng, Mu-Hsiang Huang
  • Patent number: 7355907
    Abstract: A decoding signal circuit is configured to generate a dual operation decoding signal that enables a read operation and a write operation to be performed in one clock cycle. The decoding signal circuit is configured such that a read decoding signal and a write decoding signal are generated and multiplexed together to form the dual operation decoding signal. The memory device receives a read address and a write address consecutively in one cycle to generate the dual operation decoding signal. A single operation, such as a read only operation or a write only operation, can be performed as well as the dual operation of performing the read operation and the write operation in the same cycle.
    Type: Grant
    Filed: April 14, 2006
    Date of Patent: April 8, 2008
    Assignees: Sony Corporation, Sony Electronics
    Inventors: Hsin-Ley Suzanne Chen, Chih-Chiang Tseng, Mu-Hsiang Huang
  • Patent number: 7313040
    Abstract: A dynamic sense amplifier for static random access memory (SRAM) is provided. The dynamic sense amplifier includes a pre-amplifier configured to amplify small input signals according to a first clock signal, and a main sense-latch coupled to the pre-amplifier, wherein the main sense-latch is configured to respond to the small input signals according to a second clock signal and a third clock signal, and wherein the dynamic sense amplifier is configured to consume substantially zero direct current power.
    Type: Grant
    Filed: May 3, 2006
    Date of Patent: December 25, 2007
    Assignees: Sony Corporation, Sony Electronics, Inc.
    Inventors: Mu-Hsiang Huang, Jae-Hyeong Kim, Patrick T. Chuang
  • Patent number: 7312629
    Abstract: A method and apparatus are provided for a programmable impedance control circuit. In one example of the apparatus, a programmable impedance control circuit of an output driver of an input/output interface is provided. The programmable impedance control circuit includes a pull-up impedance programmed according to a multi-stage emulator and a pull-down impedance programmed according to the multi-stage emulator. The multi-stage emulator includes a first stage for calibrating a pull-up PMOS impedance at a voltage level Voh, a second stage for calibrating a pull-up NMOS impedance at a voltage level Vol, a third stage for calibrating a pull-down NMOS impedance at the voltage level Vol, a fourth stage for re-calibrating the pull-up NMOS impedance at the voltage level Vol, and fifth stage for calibrating a pull-down PMOS impedance at the voltage level Voh.
    Type: Grant
    Filed: May 17, 2006
    Date of Patent: December 25, 2007
    Assignees: Sony Corporation, Sony Electronics, Inc.
    Inventors: Mu-Hsiang Huang, Katsuya Nakashima, Yoshifumi Miyajima, Masahiro Ichihashi
  • Publication number: 20070268039
    Abstract: A method and apparatus are provided for a programmable impedance control circuit. In one example of the apparatus, a programmable impedance control circuit of an output driver of an input/output interface is provided. The programmable impedance control circuit includes a pull-up impedance programmed according to a multi-stage emulator and a pull-down impedance programmed according to the multi-stage emulator. The multi-stage emulator includes a first stage for calibrating a pull-up PMOS impedance at a voltage level Voh, a second stage for calibrating a pull-up NMOS impedance at a voltage level Vol, a third stage for calibrating a pull-down NMOS impedance at the voltage level Vol, a fourth stage for re-calibrating the pull-up NMOS impedance at the voltage level Vol, and fifth stage for calibrating a pull-down PMOS impedance at the voltage level Voh.
    Type: Application
    Filed: May 17, 2006
    Publication date: November 22, 2007
    Inventors: Mu-Hsiang Huang, Katsuya Nakashima, Yoshifumi Miyajima, Masahiro Ichihashi
  • Publication number: 20070129127
    Abstract: The present invention discloses a Sudoku game device, including: a housing; a printed circuit board; a microcontroller comprising at least a video out port, an audio out port, and a signal in port, wherein the video out port and the audio out port can be coupled with a display device and the signal in port can be coupled with an input device which is provided with at least an input keypad; a first memory for storing data; and a second memory for storing the program of the microcontroller to process Sudoku puzzles. With the input keypad, users can execute a Sudoku puzzle, create their own Sudoku puzzles, or execute other operations. Also, the results of Sudoku puzzles can be displayed in a 3×3 block on the display device. Furthermore, the present invention also provide a Sudoku game device which can display at least one mark in a 3×3 block on the display device for users' ease of use and observation.
    Type: Application
    Filed: February 1, 2006
    Publication date: June 7, 2007
    Inventors: Mu-Hsiang Huang, Pen-Ll Ting, Hsiang-Jui Chen
  • Publication number: 20070097780
    Abstract: A decoding signal circuit is configured to generate a dual operation decoding signal that enables a read operation and a write operation to be performed in one clock cycle. The decoding signal circuit is configured such that a read decoding signal and a write decoding signal are generated and multiplexed together to form the dual operation decoding signal. The memory device receives a read address and a write address consecutively in one cycle to generate the dual operation decoding signal. A single operation, such as a read only operation or a write only operation, can be performed as well as the dual operation of performing the read operation and the write operation in the same cycle.
    Type: Application
    Filed: April 14, 2006
    Publication date: May 3, 2007
    Inventors: Hsin-Ley Chen, Chih-Chiang Tseng, Mu-Hsiang Huang
  • Publication number: 20070097765
    Abstract: A dynamic sense amplifier for static random access memory (SRAM) is provided. The dynamic sense amplifier includes a pre-amplifier configured to amplify small input signals according to a first clock signal, and a main sense-latch coupled to the pre-amplifier, wherein the main sense-latch is configured to respond to the small input signals according to a second clock signal and a third clock signal, and wherein the dynamic sense amplifier is configured to consume substantially zero direct current power.
    Type: Application
    Filed: May 3, 2006
    Publication date: May 3, 2007
    Inventors: Mu-Hsiang Huang, Jae-Hyeong Kim, Patrick Chuang
  • Publication number: 20070101222
    Abstract: A chain of boundary scan registers is configured to use a two-phase clock signal to avoid data timing race conditions. The two-phase clock signal is generated according to a two-phase clock generator, which includes two self-timed clock pulse generators for each boundary scan register. The two-phase clock generator locally generates a self-timed clock pulse at the rising edge of a clock signal, which triggers a first stage of the boundary scan register. The two-phase clock generator also generates a self-timed clock pulse at the falling edge of the input clock signal, which triggers a second stage of the boundary scan register. The two-phase clock controlled boundary scan register includes two latches, each latch is triggered by one of the self-timed clock pulse generated locally from the rising and falling edge of the input clock signal.
    Type: Application
    Filed: April 14, 2006
    Publication date: May 3, 2007
    Inventors: Hsin-Ley Chen, Patrick Chuang, Mu-Hsiang Huang
  • Publication number: 20070085762
    Abstract: The present invention provides a method for concealing a mark in a number including the following steps: separating a number into seven segments, concealing at least a mark in at least a segment of the number, and displaying the number in a display device. Besides, the present invention provides a device for concealing at least a mark in the number displayed.
    Type: Application
    Filed: November 23, 2005
    Publication date: April 19, 2007
    Inventor: Mu-Hsiang Huang
  • Publication number: 20070087842
    Abstract: The present invention provides a Sudoku game device, including: a housing; a display device disposed in but protruding from the housing and capable of displaying at least a seven-segment number; at least an input key disposed in but protruding from the housing, wherein users can input, select, or operate with the input key; a printed circuit board disposed in the housing to accommodate the devices described below; a controller disposed on the printed circuit board and coupled with the input key to receive input instructions from the input key to execute self-created puzzles or other operations; and a driving device disposed on the printed circuit board and coupled with the controller to receive control instructions from the controller to drive the display device to display the number.
    Type: Application
    Filed: December 30, 2005
    Publication date: April 19, 2007
    Inventors: Mu-Hsiang Huang, Pen-Li Ting, Hsiang-Jui Chen