Abstract: This application provides an XR object rendering method, related apparatus and system. The method includes: determining or accepting, by a terminal device, a rendering division which means that a portion of to-be-rendered XR objects in an XR call of the terminal device are to be rendered by a network-side rendering device, and the other portion of to-be-rendered XR objects in the XR call of the terminal device are to be rendered by the terminal device; and rendering, by the terminal device, the to-be-rendered XR object that is to be rendered by the terminal device in the XR call, and sending, to the network-side rendering device, information about the to-be-rendered XR object that is to be rendered by the network-side rendering device in the XR call.

Abstract: Techniques for code-free automated machine learning (ML) are described. Users can train high-quality ML models and pipelines without necessarily needing to write code by providing a training dataset to a code-free machine learning service. The service may deploy an ML orchestration function and a storage location on behalf of a user. When a modification is made to the storage bucket, such as by the user providing a training dataset, the orchestration function is invoked and can automatically initiate an AutoML process using at least the training data to train multiple ML model variants. The resultant ML model(s) and associated metrics can be provided to the user, deployed behind an endpoint, and/or used to generate inferences.

Abstract: A method includes forming a semiconductor fin over a substrate, etching the semiconductor fin to form a recess, wherein the recess extends into the substrate, and forming a source/drain region in the recess, wherein forming the source/drain region includes epitaxially growing a first semiconductor material on sidewalls of the recess, wherein the first semiconductor material includes silicon germanium, wherein the first semiconductor material has a first germanium concentration from 10 to 40 atomic percent, epitaxially growing a second semiconductor material over the first semiconductor material, the second semiconductor material including silicon germanium, wherein the second semiconductor material has a second germanium concentration that is greater than the first germanium concentration, and epitaxially growing a third semiconductor material over the second semiconductor material, the third semiconductor material including silicon germanium, wherein the third semiconductor material has a third germanium con

Abstract: A system for calibrating the multi-element antenna can include a computer including a processor and memory, wherein the memory stores instructions executable by the processor to detect a location of a laser signal incident on a receiving surface, the laser signal having been reflected from a reflector positioned over an area of a multi-element antenna. The instructions may additionally include instructions to compute a differential phase of an element of the multi-element antenna based on the detected location of the incident laser signal.

Abstract: A V-shaped wheel spoke made of carbon fiber material is provided. The bottom part of the spoke is provided with a first through hole for placing a bolt when the spoke is connected with a wheel rim. The spoke has two legs, the top portion of each of the two legs is provided with a second through hole for placing bolt when the two legs are connected with flanges at left and right sides of a hub. With this design, the conventional connection structure consisting of spokes and nipples has been abandoned, and bolts or fastening structures are used for connection. The two legs of the spoke are respectively connected to the flanges at the left and right sides of the hub with bolts or fastening structures, such that the overall structure forms a stable triangle which greatly improves the strength and stiffness of the wheel.

Abstract: A device includes a semiconductor channel region over a substrate, a shallow trench isolation (STI) region in the substrate, a gate structure over the semiconductor channel region. The semiconductor channel region has a channel top higher than a top surface of the STI region by a first height. The device further includes a first source/drain epitaxy structure and a second source/drain epitaxy structure respectively at opposite sides of the gate structure, and a first dielectric fin sidewall structure and a second dielectric fin sidewall structure on opposite sides of the first source/drain epitaxy structure, respectively. A top of the first dielectric fin sidewall structure is higher than the top surface of the STI region by a second height. The second height is at most half the first height.

Abstract: A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate stack over an active region and a source/drain region in the active region adjacent the gate stack. The source/drain region includes a first semiconductor layer having a first germanium concentration and a second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second germanium concentration greater than the first germanium concentration. The source/drain region further includes a third semiconductor layer over the second semiconductor layer and a fourth semiconductor layer over the third semiconductor layer. The third semiconductor layer has a third germanium concentration greater than the second germanium concentration. The fourth semiconductor layer has a fourth germanium concentration less than the third germanium concentration.

Abstract: Current thermostat data including room temperature readings, thermostat control commands, and user input temperature set point changes is collected. The current thermostat data is sent from a thermostat to a cloud server that creates and continually updates a first server machine learning model trained using previous and the current thermostat data, a second thermostat machine learning model is created for sending control commands to the thermostat using the previous and the current thermostat data, and the second thermostat machine learning model is updated. The second thermostat machine learning model is updated by sending updated model parameters from the first server machine learning model to the second thermostat machine learning model. One or more new thermostat commands determined from the current thermostat data are received from the second thermostat machine learning model and the one or more new thermostat commands are executed.

Abstract: A device includes a fin over a substrate, the fin including a first end and a second end, wherein the first end of the fin has a convex profile, an isolation region adjacent the fin, a gate structure along sidewalls of the fin and over the top surface of the fin, a gate spacer laterally adjacent the gate structure, and an epitaxial region adjacent the first end of the fin.

Abstract: A fin field effect transistor (Fin FET) device includes fin structure extending in first direction and protruding from isolation insulating layer disposed over substrate. The fin structure includes a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. The Fin FET device includes a gate structure covering a portion of the fin structure and extending in a second direction perpendicular to the first direction. The Fin FET device includes a source and a drain. Each of the source and drain includes a stressor layer disposed in recessed portions formed in the fin structure. The stressor layer extends above the recessed portions and applies a stress to a channel layer of the fin structure under the gate structure. The Fin FET device includes a dielectric layer formed in contact with the oxide layer and the stressor layer in the recessed portions.

Abstract: A device includes a semiconductor substrate, a semiconductor fin, a gate structure, a first source/drain epitaxy structure, a second source/drain epitaxy structure, a first dielectric fin sidewall structure, a second dielectric fin sidewall structure. The semiconductor fin is over the semiconductor substrate. The semiconductor fin includes a channel portion and recessed portions on opposite sides of the channel portion. The gate structure is over the channel portion of the semiconductor fin. The first source/drain epitaxy structure and the second source/drain epitaxy structure are over the recessed portions of the semiconductor fin, respectively. The first source/drain epitaxy structure has a round surface. The first dielectric fin sidewall structure and the second dielectric fin sidewall structure are on opposite sides of the first source/drain epitaxy structure. The round surface of the first source/drain epitaxy structure is directly above the first dielectric fin sidewall structure.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate stack over an active region and a source/drain region in the active region adjacent the gate stack. The source/drain region includes a first semiconductor layer having a first germanium concentration and a second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second germanium concentration greater than the first germanium concentration. The source/drain region further includes a third semiconductor layer over the second semiconductor layer and a fourth semiconductor layer over the third semiconductor layer. The third semiconductor layer has a third germanium concentration greater than the second germanium concentration. The fourth semiconductor layer has a fourth germanium concentration less than the third germanium concentration.

Abstract: Alloyed metals, and techniques for creating parts from alloyed metals, are disclosed. An apparatus in accordance with an aspect of the present disclosure comprises an alloy. An additive manufacturing alloy in accordance with the present disclosure may comprise magnesium (Mg) that is between 2.0 and 5.3% by weight, manganese (Mn) that is between 0.01 and 4.0% by weight, silicon (Si) that is between 0.1 and 1.5% by weight, zirconium (Zr) that is between 0.01 and 2.0% by weight, and aluminum (Al). In some cases, the alloy such as described in the previous sentence might not include Mg.

Abstract: A method and an apparatus for forming powder. The formed powder may include an alloy of powder that can be used in additively manufacturing and powder metallurgy applications to create structures. The method and apparatus may deliver a source material having a first material composition, melt the source material to form a molten source material, vibrate a substate structure, the substrate structure including a substrate material having a substrate material composition, apply the molten source material to the vibrating substrate structure to obtain a powder, where a portion of the substrate material is selectively added to the molten source material such that the powder has a second material composition different than the first material composition, and control the second material composition of the powder based on the first material composition and the substrate material composition.

Abstract: An IC structure includes a first fin structure, a first epitaxial structure, first sidewall spacers, a second fin structure, a second epitaxial structure, and second sidewall spacers. The first epitaxial structure is on the first structure. The first sidewall spacers are respectively on opposite sidewalls of the first epitaxial structure. The second epitaxial structure is on the second fin structure. The second sidewall spacers are respectively on opposite sidewalls of the second epitaxial structure. A height difference between the second sidewall spacers is greater than a height difference between the first sidewall spacers.

Abstract: A printer and methods for additive manufacturing a build piece may include a camera and an optical spectrometer obtaining spectral information and optical information from a region of melted material to determine a defect condition based on an evaluation of processed spectral or optical information. A processor or a computer may process the obtained and optical information and determine a defect condition during the additively manufacturing process. The obtained spectral and optical information may be of the region of the melted material, a melt pool and a mushy zone. The printer and method may include a controller configured to modify a process parameter to shape the weld pool to obtain a desired effective absorptivity of a portion of the weld pool, e.g., to increase the effective absorptivity relative to an absorptivity of a surface of the powder or material deposited by the depositor and to maintain an acceptable temperature of the weld pool during the additively manufacturing process.

Abstract: A fin field effect transistor (Fin FET) device includes a fin structure extending in a first direction and protruding from an isolation insulating layer disposed over a substrate. The fin structure includes a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. The Fin FET device includes a gate structure covering a portion of the fin structure and extending in a second direction perpendicular to the first direction. The Fin FET device includes a source and a drain. Each of the source and drain includes a stressor layer disposed in recessed portions formed in the fin structure. The stressor layer extends above the recessed portions and applies a stress to a channel layer of the fin structure under the gate structure. The Fin FET device includes a dielectric layer formed in contact with the oxide layer and the stressor layer in the recessed portions.

Abstract: A two-stage machine learning model is used to for categorization of a dataset, such as transactions. A plurality of complementary base machine learning models are used to generate initial inference results and associated measures of inference confidence from the dataset, which are collected as a meta dataset. Each of the complementary models is associated with a different part of the dataset in which it has a higher accuracy in that part than the other models. The meta dataset is provided as input to a meta machine learning model, which is trained to produce a final inference result, and a confidence score model, which is trained to produce a confidence score associated with the final inference result.

Abstract: A method and an apparatus for forming powder. The formed powder may include an alloy of powder that can be used in additively manufacturing and powder metallurgy applications to create structures. The method and apparatus may deliver a source material having a first material composition, melt the source material to form a molten source material, vibrate a substate structure, the substrate structure including a substrate material having a substrate material composition, apply the molten source material to the vibrating substrate structure to obtain a powder, where a portion of the substrate material is selectively added to the molten source material such that the powder has a second material composition different than the first material composition, and control the second material composition of the powder based on the first material composition and the substrate material composition.