Patents by Inventor Mu-Tsang Lin
Mu-Tsang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240087935Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Jyh-Shiou HSU, Chyi-Tsong NI, Mu-Tsang LIN, Su-Horng LIN
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Patent number: 11854851Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.Type: GrantFiled: March 5, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jyh-Shiou Hsu, Chyi-Tsong Ni, Mu-Tsang Lin, Su-Horng Lin
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Publication number: 20230337365Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.Type: ApplicationFiled: June 21, 2023Publication date: October 19, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shen-Min YANG, Pu Kuan FANG, Jyh-Shiou HSU, Mu-Tsang LIN
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Patent number: 11721746Abstract: A semiconductor device includes a fin projecting upwardly from a substrate; a gate stack engaging the fin; a gate spacer on a sidewall of the gate stack and in contact with the gate stack; and a dielectric layer on the sidewall of the gate stack and in contact with the gate stack, the dielectric layer being vertically between the fin and the gate spacer, wherein the dielectric layer has a thickness small than the gate spacer.Type: GrantFiled: August 17, 2020Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Che-Cheng Chang, Jr-Jung Lin, Shih-Hao Chen, Chih-Han Lin, Mu-Tsang Lin, Yung Jung Chang
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Patent number: 11723152Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.Type: GrantFiled: July 23, 2020Date of Patent: August 8, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shen-Min Yang, Pu Kuan Fang, Jyh-Shiou Hsu, Mu-Tsang Lin
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Patent number: 11631748Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate electrode over the semiconductor substrate. The semiconductor device structure also includes a source/drain structure adjacent to the gate electrode. The semiconductor device structure further includes a spacer element over a sidewall of the gate electrode, and the spacer element has an upper portion having a first exterior surface and a lower portion having a second exterior surface. Lateral distances between the first exterior surface and the sidewall of the gate electrode are substantially the same. Lateral distances between the second exterior surface and the sidewall of the gate electrode increase along a direction from a top of the lower portion towards the semiconductor substrate.Type: GrantFiled: October 8, 2020Date of Patent: April 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Bo-Feng Young, Che-Cheng Chang, Mu-Tsang Lin, Tung-Wen Cheng, Zhe-Hao Zhang
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Patent number: 11594534Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.Type: GrantFiled: May 6, 2021Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tung-Wen Cheng, Chih-Shan Chen, Mu-Tsang Lin
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Publication number: 20220367292Abstract: The present disclosure describes a method for controlling gas supplies and an example system for performing the method. The method includes providing a first setting to configure a gas supply device to supply a first gas mixture to a substrate carrier holding a first substrate. The method further includes receiving critical dimension (CD) data measured on the first substrate after the first substrate completes a process operation. The method further includes, in response to the CD data being outside a predetermined range, providing a second setting to configure the gas supply device to supply a second gas mixture to the substrate carrier holding a second substrate that has yet to undergo the process operation.Type: ApplicationFiled: November 1, 2021Publication date: November 17, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yen-Lin CHANG, Pu-Kuan Fang, Yung-Ta Yen, Mu-Tsang Lin
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Publication number: 20220285192Abstract: A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum.Type: ApplicationFiled: March 5, 2021Publication date: September 8, 2022Inventors: Jyh-Shiou Hsu, Chyi-Tsong Ni, Mu-Tsang Lin, Su-Horng Lin
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Patent number: 11342458Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.Type: GrantFiled: October 26, 2020Date of Patent: May 24, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Che-Cheng Chang, Tung-Wen Cheng, Chang-Yin Chen, Mu-Tsang Lin
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Publication number: 20210280581Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.Type: ApplicationFiled: May 6, 2021Publication date: September 9, 2021Inventors: Tung-Wen Cheng, Chih-Shan Chen, Mu-Tsang Lin
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Publication number: 20210235583Abstract: The present disclosure describes a storage device including a top panel, a bottom panel, a back panel, a front panel, and two side panels configured to form an enclosed volume. The storage device further includes multiple slots disposed at inner surfaces of the two side panels and configured to hold a substrate, a gas diffuser disposed at an inner surface of the back panel and configured to provide a purge gas to the enclosed volume, an isolation gas device disposed on an inner surface of the top panel and adjacent to a top portion of the front panel, and an isolation gas line configured to connect the isolation gas device to the gas diffuser. The isolation gas device is configured to inject the purge gas into a front portion of the storage device and in a direction from the top panel toward the bottom panel.Type: ApplicationFiled: July 23, 2020Publication date: July 29, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shen-Min YANG, Buh-Kuan FANG, Jyh-Shiou HSU, Mu-Tsang LIN
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Patent number: 11018259Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.Type: GrantFiled: May 20, 2016Date of Patent: May 25, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Yang Lo, Tung-Wen Cheng, Chia-Ling Chan, Mu-Tsang Lin
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Patent number: 11004845Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.Type: GrantFiled: November 6, 2019Date of Patent: May 11, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tung-Wen Cheng, Chih-Shan Chen, Mu-Tsang Lin
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Publication number: 20210043773Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.Type: ApplicationFiled: October 26, 2020Publication date: February 11, 2021Inventors: Che-Cheng Chang, Tung-Wen Cheng, Chang-Yin Chen, Mu-Tsang Lin
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Publication number: 20210036128Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate electrode over the semiconductor substrate. The semiconductor device structure also includes a source/drain structure adjacent to the gate electrode. The semiconductor device structure further includes a spacer element over a sidewall of the gate electrode, and the spacer element has an upper portion having a first exterior surface and a lower portion having a second exterior surface. Lateral distances between the first exterior surface and the sidewall of the gate electrode are substantially the same. Lateral distances between the second exterior surface and the sidewall of the gate electrode increase along a direction from a top of the lower portion towards the semiconductor substrate.Type: ApplicationFiled: October 8, 2020Publication date: February 4, 2021Inventors: Bo-Feng Young, Che-Cheng Chang, Mu-Tsang Lin, Tung-Wen Cheng, Zhe-Hao Zhang
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Patent number: 10879399Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.Type: GrantFiled: September 19, 2018Date of Patent: December 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Wei-Yang Lo, Tung-Wen Cheng, Chia-Ling Chan, Mu-Tsang Lin
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Publication number: 20200381532Abstract: A semiconductor device includes a fin projecting upwardly from a substrate; a gate stack engaging the fin; a gate spacer on a sidewall of the gate stack and in contact with the gate stack; and a dielectric layer on the sidewall of the gate stack and in contact with the gate stack, the dielectric layer being vertically between the fin and the gate spacer, wherein the dielectric layer has a thickness small than the gate spacer.Type: ApplicationFiled: August 17, 2020Publication date: December 3, 2020Inventors: Che-Cheng Chang, Jr-Jung Lin, Shih-Hao Chen, Chih-Han Lin, Mu-Tsang Lin, Yung Jung Chang
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Patent number: 10818794Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.Type: GrantFiled: July 15, 2019Date of Patent: October 27, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Che-Cheng Chang, Tung-Wen Cheng, Chang-Yin Chen, Mu-Tsang Lin
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Patent number: 10811516Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate electrode over the semiconductor substrate. The semiconductor device structure also includes a source/drain structure adjacent to the gate electrode. The semiconductor device structure further includes a spacer element over a sidewall of the gate electrode, and the spacer element has an upper portion having a first exterior surface and a lower portion having a second exterior surface. Lateral distances between the first exterior surface and the sidewall of the gate electrode are substantially the same. Lateral distances between the second exterior surface and the sidewall of the gate electrode increase along a direction from a top of the lower portion towards the semiconductor substrate.Type: GrantFiled: December 21, 2018Date of Patent: October 20, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Bo-Feng Young, Che-Cheng Chang, Mu-Tsang Lin, Tung-Wen Cheng, Zhe-Hao Zhang