Abstract: The disclosure relates to a shielded electronic module which includes a module shielding structure and an electronic module with an interposer, a shielded electronic submodule over the interposer, and a module mold compound over the interposer and encapsulating sides of the shielded electronic submodule. Herein, the shielded electronic submodule includes an electronic submodule and a submodule side shielding structure, which covers sides of the electronic submodule to provide the sides of the shielded electronic submodule. A top surface of the electronic module is a combination of a top surface of the module mold compound and a top surface of the shielded electronic submodule, which is not covered by the module mold compound. The module shielding structure directly and continuously covers the top surface and sides of the electronic module, such that the submodule side shielding structure is electrically connected to the module shielding structure to individually shield the electronic submodule.

Abstract: The present disclosure relates to a Bulk Acoustic Wave (BAW) resonator with tunable electromechanical coupling. The disclosed BAW resonator includes a bottom electrode, a top electrode, and a multilayer transduction structure sandwiched therebetween. Herein, the multilayer transduction structure is composed of multiple transduction layers, and at least one of the transduction layers is formed of a ferroelectric material, whose polarization will vary with an electric field across the ferroelectric material. Upon adjusting direct current (DC) bias voltage across the bottom electrode and the top electrode, an overall polarization of the multilayer transduction structure and an overall electromechanical coupling coefficient of the multilayer transduction structure are capable of being changed.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include mode suppression structures. Acoustic resonators, including stacked crystal filters (SCFs), are disclosed that include spurious mode suppression by modifying a piezoelectric coupling profile within one or more layers of an SCF. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof. Symmetric input and output electrical response for SCFs with mode suppression configurations may be exhibited by including piezoelectric materials with different electromechanical coupling values and/or by dividing stress profiles differently by configuring different thicknesses for input and output sides of SCFs.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof.

Abstract: A radio frequency (RF) circuit is provided. The RF circuit may include a variety of RF filters organized into a number of filter banks and configured to support carrier aggregation (CA) in a variety of band combinations. In examples discussed herein, the RF circuit is configured to utilize separate receive and transmit filters for filtering an RF receive signal and an RF transmit signal in a time-division duplex (TDD) band, respectively. By employing separate receive and transmit filters for the TDD band, as opposed to using an integrated receive-transmit filter, it may be possible to implement the receive and transmit filters in the RF circuit with improved impedance matching, interference rejection, and insertion loss without increasing a footprint of the RF circuit.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include mode suppression structures. Acoustic resonators, including stacked crystal filters (SCFs), are disclosed that include spurious mode suppression by modifying a piezoelectric coupling profile within one or more layers of an SCF. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof. Symmetric input and output electrical response for SCFs with mode suppression configurations may be exhibited by including piezoelectric materials with different electromechanical coupling values and/or by dividing stress profiles differently by configuring different thicknesses for input and output sides of SCFs.

Abstract: Acoustic resonators, such as bulk acoustic wave (BAW) resonators, are disclosed that include phase shift structures. Acoustic resonators, including stacked crystal filters (SCFs) and coupled resonator filters (CRFs), may include inverted piezoelectric layers that are configured to provide built-in phase shift capabilities. Circuit topologies that include such SCFs may be provided with simplified structures and reduced loss. Circuit topologies with such CRFs may be provided with more symmetrical electrical connections and improved phase balance over operating frequencies. SCFs with phase shift structures may additionally include spurious mode suppression by modifying piezoelectric coupling profiles within one or more layers. Mode suppression configurations may include structures with one or more inverted polarity piezoelectric layers, one or more non-piezoelectric layers, one or more thicker electrodes of the SCF, and combinations thereof.

Abstract: A radio frequency (RF) circuit is provided. The RF circuit may include a variety of RF filters organized into a number of filter banks and configured to support carrier aggregation (CA) in a variety of band combinations. In examples discussed herein, the RF circuit is configured to utilize separate receive and transmit filters for filtering an RF receive signal and an RF transmit signal in a time-division duplex (TDD) band, respectively. By employing separate receive and transmit filters for the TDD band, as opposed to using an integrated receive-transmit filter, it may be possible to implement the receive and transmit filters in the RF circuit with improved impedance matching, interference rejection, and insertion loss without increasing a footprint of the RF circuit.