Patents by Inventor Mudit KHANNA

Mudit KHANNA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250192771
    Abstract: Unidirectional hybrid switch. At least one example is a method operating a hybrid switch, the method comprising: sensing a voltage across an upper terminal and a lower terminal of the hybrid switch, the hybrid switch is forward biased when the upper terminal has higher voltage, and the hybrid switch is reverse biased when the lower terminal has higher voltage; when the hybrid switch is forward biased, selectively conducting a forward current from the upper terminal to the lower terminal by sharing the forward current between a FET switch and a BJT switch, the selectively conducting when a control terminal is asserted; and when the hybrid switch is reversed biased, non-selectively conducting a reverse current from the lower terminal to the upper terminal.
    Type: Application
    Filed: December 6, 2023
    Publication date: June 12, 2025
    Applicant: IDEAL POWER INC.
    Inventors: Ruiyang YU, Jiankang BU, Yifan JIANG, R. Daniel BRDAR, Mudit KHANNA
  • Publication number: 20250112634
    Abstract: Operating a double-sided double-base bipolar junction transistor. One example is a method of operating a switch assembly, the method comprising: blocking current flow from an upper terminal of the switch assembly to a lower terminal by a transistor; and then responsive to assertion of a conduction signal, conducting a first load current from the upper terminal to a lower terminal. The conducting the first load current may be by: closing an upper-main FET coupled between the upper terminal and an upper collector-emitter of the transistor; closing a lower-main FET coupled between a lower collector-emitter of the transistor and the lower terminal; driving a first turn-on current to an upper base of the transistor from an upper current source; and then providing a first steady-state current to the upper base from the upper current source, the first steady-state current lower than the first turn-on current.
    Type: Application
    Filed: August 6, 2024
    Publication date: April 3, 2025
    Applicant: IDEAL POWER INC.
    Inventors: Mudit KHANNA, Jiankang BU, Ruiyang YU
  • Publication number: 20250080107
    Abstract: A hybrid switch circuit for coupling two circuit terminals together is disclosed. The hybrid switch circuit includes a set of bidirectional switch devices coupled between a first circuit terminal and a second circuit terminal. The hybrid switch circuit also includes a set of unidirectional switch devices that are also coupled between the first circuit terminal and the second circuit terminal. In some cases, the set of bidirectional switch devices may be implemented using bidirectional double-base bipolar junction transistors, while the set of unidirectional switch devices may be implemented using wide bandgap transistors. In response to a de-assertion of a switch signal, a control circuit may open the set of bidirectional switch devices and, after a period of time has elapsed, open the set of unidirectional switch devices.
    Type: Application
    Filed: August 30, 2023
    Publication date: March 6, 2025
    Applicant: IDEAL POWER INC.
    Inventors: Ruiyang YU, Jiankang BU, Yifan JIANG, R. Daniel BRDAR, Mudit KHANNA
  • Publication number: 20240396546
    Abstract: Double-sided double-base bipolar junction transistor, and methods of operation. One example is a method comprising conducting main load current from an upper terminal of a switch assembly, through a double-sided double-base bipolar junction transistor (DSDB-BJT) of the switch assembly, and then through a lower terminal of the switch assembly. The conducting may be by: injecting charge carriers into an upper drift region of the DSDB-BJT as the main load current flows into an upper collector-emitter of the DSDB-BJT; and simultaneously injecting charge carriers into a lower drift region of the DSDB-BJT as main load current flows out of a lower collector-emitter of the DSDB-BJT.
    Type: Application
    Filed: January 25, 2024
    Publication date: November 28, 2024
    Applicant: IDEAL POWER INC.
    Inventors: Mudit KHANNA, Jiankang BU, Ruiyang YU, Yifan JIANG, R. Daniel BRDAR
  • Publication number: 20240154029
    Abstract: Operating a PNP double-sided double-base bipolar junction transistor (DSDB BJT). One example is a method of operating a DSDB-BJT, the method comprising: conducting a first load current from an upper terminal of the power module to an upper base of the transistor, through the transistor, and from a lower base to a lower terminal of the power module; and then responsive assertion of a first interrupt signal interrupting the first load current from the lower base to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower collector-emitter of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.
    Type: Application
    Filed: October 10, 2023
    Publication date: May 9, 2024
    Applicant: IDEAL POWER INC.
    Inventors: R. Daniel BRDAR, Jiankang BU, Ruiyang YU, Mudit KHANNA