Patents by Inventor Muhammad A. Khaliq

Muhammad A. Khaliq has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon nitride for application as the gate dielectric in MOS devices
    Patent number: 5264724
    Abstract: A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
    Type: Grant
    Filed: May 29, 1990
    Date of Patent: November 23, 1993
    Assignee: The University of Arkansas
    Inventors: William D. Brown, Muhammad A. Khaliq
  • Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
    Patent number: 4962065
    Abstract: A process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
    Type: Grant
    Filed: February 9, 1990
    Date of Patent: October 9, 1990
    Assignee: The University of Arkansas
    Inventors: William D. Brown, Muhammad A. Khaliq