Abstract: A method for determining a consistency coefficient of a power-law cement grout includes: determining a water-cement ratio of the power-law cement grout; according to engineering practice requirements, determining a time required to determine the consistency coefficient of the power-law cement grout; and obtaining the consistency coefficient of the power-law cement grout. The method is accurate and reliable, requires less calculation, etc.; and has very high practical value and popularization value in environmental protection and ecological restoration.

Abstract: A method for determining a three-dimensional tortuosity of a loose and broken rock-soil mass, includes the following steps: a particle grading curve of the loose and broken rock-soil mass is obtained by utilizing a particle size analysis, and followed by calculating an equivalent particle size and an average particle size; a porosity of the loose and broken rock-soil mass is obtained by utilizing a moisture content test, a density test, and a specific gravity test; the three-dimensional tortuosity of the loose and broken rock-soil mass is obtained by utilizing the equivalent particle size, the average particle size and the porosity of the loose and broken rock-soil mass. The method has the advantages of simple logic, accuracy and reliability, simple and fast parameter determination, and has high practical value and promotion value in the field of environmental protection and ecological restoration technology.

Abstract: A method for determining a column-hemispherical permeation radius with time-varying property of power-law cement grout and tortuosity of rock and soil mass is provided, including: acquiring a porosity ? of rock and soil mass and a corresponding permeation coefficient K by geotechnical tests, measuring a groundwater pressure P0 at a grouting point and determining tortuosity ? of rock and soil mass; acquiring an initial consistency coefficient c0, a rheological index n and a time-varying property coefficient k of power-law cement grout with a designed water to cement ratio by rheological tests, and determining the viscosity of water ?w; acquiring grouting parameters, including a grouting pressure P1, grouting time t, a number m of grouting holes of a side surface of a grouting pipe and a grouting hole radius r; and solving a column-hemispherical permeation grouting diffusion radius R considering coupling effect both the tortuosity of rock and soil mass and the time-varying property of power-law cement grout.

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.