Abstract: A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 ?m. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.

Abstract: The present invention provides a composite material and a sensing platform unit comprising a self-healing polymer matrix and at least two conductive nanomaterials embedded therein. The polymer matrix has a multi-layer structure comprising a first layer comprising a network of a first nanomaterial, which resistance changes in response to a mechanical damage inflicted on the polymer matrix; and a second layer comprising a network of a second nanomaterial, configured to generate heat under applied voltage. The network of the first nanomaterial and the network of the second nanomaterial are electrically connected to a mutual control circuit which is configured to apply voltage to the second nanomaterial upon a change in resistance of the first nanomaterial. The sensing platform unit further comprises a third layer comprising a network of a third nanomaterial configured to detect at least one of pressure, strain, temperature, pH, humidity, and volatile organic compounds (VOCs).

Abstract: A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 µm. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.

Abstract: The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 ?m, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.

Abstract: The present invention provides a solution-processable self-healing hydrolytically stable elastomer, a method for the preparation thereof, and articles of manufacture comprising the elastomer. The elastomer comprises polymeric chains comprising units of formula (A1), wherein R is a polybutadiene-containing polyurethane; R1 and R1? are independently selected from the group consisting of: —H, (C1-C20)alkyl, (C5-C14)aryl, —OR4, —(CO)R5, —O(CO)R6, —(SO)R7, CO—R8, —COOR9, —NO2, and halogen; R2, R2?, R3 and R3? are independently selected from the group consisting of: —H, (C1-C20)alkyl, and (C5-C14)aryl; R4 to R9 are the same or different, and are independently selected from the group consisting of: —H, (C1-C20)alkyl, and (C5-C14)aryl; m is 4; wherein the elastomer is dynamically crosslinked by aromatic disulfide metathesis, and wherein the elastomer has a water contact angle of above 100 #.

Abstract: The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 ?m, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.